Single and Symmetric Double Two-Dimensional Hole Gases at Si/SiGe Heterojunctions Grown by Rapid Thermal Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
V. Venkataraman ◽  
J. C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Dopant Segregation ◽  
Thermal Chemical Vapor Deposition ◽  
Double Heterostructures ◽  
First Time

ABSTRACTTwo dimensional hole gases have been investigated in Si/SiGe modulation doped heterostructures grown by RT-CVD for the first time. Single, both normal and inverted, and double heterostructures were studied. The results suggest that any asymmetry due to dopant segregation or autodoping between the normal and inverted structures occurs on a scale of less than 1 nm.

Deposition of Monolayer-Scale Germanium/Silicon Heterostructures by Rapid Thermal Chemical Vapor Deposition

1994 ◽  
Vol 342 ◽  
Author(s):  
A. St. Amour ◽  
J.C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Cvd Growth ◽  
First Time ◽  
Germanium Silicon ◽  
Silicon Heterostructures

ABSTRACTDeposition of monolayer scale Ge/Si heterostructures by Rapid Thermal Chemical Vapor Deposition has been achieved for the first time. All previous work in this area was by Molecular Beam Epitaxy. We have observed the change in Ge growth rate at 500°C as the Si substrate was covered by the first monolayer of Ge. Auger Electron Spectroscopy and Raman scattering experiments determined that the CVD growth mode for Ge on Si (100) at 550°C is Stranski-Krastanov, with the transition to islanding occurring after three monolayers.

scholarly journals Effects of Experimental Configuration on the Morphology of Two-Dimensional ZnO Nanostructures Synthesized by Thermal Chemical-Vapor Deposition

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 517
Author(s):  
Seok Cheol Choi ◽  
Do Kyung Lee ◽  
Sang Ho Sohn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphological Properties ◽  
Two Dimensional ◽  
Zno Nanostructures ◽  
Au Catalyst ◽  
Thermal Chemical Vapor Deposition ◽  
Si Substrates ◽  
Cvd Method

Using two experimental configurations, self-assembled zinc oxide (ZnO) nanostructures including nanoplates, nanosaws, and nanobelts were synthesized by thermal chemical-vapor deposition (CVD), and their morphological properties were investigated. ZnO nanostructures grown on Au-coated Si substrates in a parallel setup revealed highly defined ZnO nanoplates and branched nanowires. ZnO nanostructures grown in a perpendicular setup using Si substrates with and without the Au catalyst exhibited vertically oriented ZnO nanosaws and randomly aligned nanobelts, respectively. In the thermal CVD method, experiment conditions such as oxygen-flow rate, growth temperature, and catalyst, and experimental configurations (i.e., parallel and perpendicular setups) were important parameters to control the morphologies of two-dimensional ZnO nanostructures showing platelike, sawlike, and beltlike shapes.

Controlled Growth of Two-Dimensional ZnO Nanowalls by Thermal Chemical Vapor Deposition

2007 ◽  
Vol 51 (96) ◽  
pp. 303 ◽  
Author(s):  
Sam-Dong LEE ◽  
Hyun-Kyu PARK ◽  
Sang-Woo KIM ◽  
Nae-Man PARK ◽  
Sang-Hyeob KIM ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Controlled Growth ◽  
Two Dimensional ◽  
Thermal Chemical Vapor Deposition

Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
C. W. Liu ◽  
A. St. Amour ◽  
J. C. Sturm ◽  
Y. R. J. Lacroix ◽  
M. L. W. Thewalt
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Strained Layers ◽  
Thermal Chemical Vapor Deposition ◽  
Free Band ◽  
First Time ◽  
Excitation Conditions

ABSTRACTThe defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

2021 ◽  
Vol 54 (4) ◽  
pp. 1011-1022
Author(s):  
Kongyang Yi ◽  
Donghua Liu ◽  
Xiaosong Chen ◽  
Jun Yang ◽  
Dapeng Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Two Dimensional Materials
Sign in / Sign up

Export Citation Format

Share Document