Atom Penetration from A Thin Film into the Substrates During Sputtering by Polyenergetic Ar+ Ion Beam with Mean Energy of 9.4 keV

1994 ◽  
Vol 354 ◽  
Author(s):  
B.A. Kalin ◽  
V.P. Gladkov ◽  
N.V. Volkov ◽  
S.E. Sabo
Keyword(s):  
Penetration Depth ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Interstitial Site ◽  
Experimental Conditions ◽  
Near Surface ◽  
Projected Range ◽  
Compressive Stresses ◽  
Wide Energy

AbstractPenetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar+ ion bombardment of samples having thermally evaporated films of 30-50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar+ ions of 9.4 keV to dose D=lxl0 -10 ion/cm2. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of tT and He+ ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS).During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3...20 times deeper than the projected range of bombarding ions and recoil atoms. This is a “deep action” effect.The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r/rm (r¡ - radius of dopant, rm - radius target of substrate) can play a principal determining role.

Characterization of Si, SiGe and SOI Structures Using Photoluminescence

1999 ◽  
Vol 588 ◽  
Author(s):  
V. Higgs
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Surface Region ◽  
Misfit Dislocations ◽  
Near Surface ◽  
Pl Mapping ◽  
Excitation Laser ◽  
Pl Intensity ◽  
P Type

AbstractA new Photoluminescence (PL) method has been developed to detect defects in the near surface region of Si wafers and Si-on-insulator (SOI) structures. Wafer maps (up to 300 min diameter) can be readily acquired and areas of interest can be scanned at high resolution (≈1 μm). The excitation laser beam is modulated to confine the photogenerated carriers; defects are observed due to the localised reduction of the carrier lifetime. Si p-type (10 Ohm.cm) wafers were intentionally contaminated with various levels of Ni and Fe (1×109−5×1010 atoms/cm2) and annealed. The PL intensity was observed to decrease due to the metal related non-radiative defects. Whereas in contrast, for Cu, (1×109−5×1010 atoms/cm2) the PL intensity actually increased initially and reached a maximum value at 5×109 atoms/cm2. It is suggested that during contamination the Cu related defects have complexed with existing defects (that have stronger recombination properties) and increased the PL. Further Cu contamination (1×1010−5×1010 atoms/cm2) produced a reduction in the PL intensity. PL mapping of strained SiGe epilayers showed that misfit dislocations can be detected and PL can be used to evaluate material quality.PL maps of SOI bonded wafers revealed that the non-bonded areas, voids or gas bubbles could be detected. This was confirmed using defect etching and polishing, voids as small as ≈30 μm in diameter could be detected. SOI wafers fabricated using the separation by implanted oxygen (SIMOX) technique were also analysed, variations in the recombination properties of the layer could be observed. Further inspection using transmission electron microscopy (TEM) revealed that the defects were non-uniformities of the buried oxide covering several microns and containing tetrahedral stacking faults. Focused ion beam (FIB) milling and secondary ion mass spectrometry (SIMS) showed that these defects were at the Si/SiO2 interface and were chemically different to the surrounding area.

Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
P. H. Keys ◽  
J. H. Li ◽  
E. Heitman ◽  
P. A. Packan ◽  
M. E. Law ◽  
...  
Keyword(s):  
Species Interactions ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Effective Diffusion ◽  
Chemical Species ◽  
High Dose ◽  
Extended Defects ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Marker Layer

ABSTRACTExtended defects resulting from ion implantation are believed to act in some cases as a driving force behind transient enhanced diffusion (TED). We use secondary ion mass spectrometry (SIMS) to study the diffusion enhancements of an underlying boron doped spike after creating implant damage in the near surface region. Diffusion enhancements are compared for silicon implants and phosphorus implants to distinguish between factors related to chemical species interactions versus those related to ion beam damage. Transmission electron microscopy (TEM) is used to investigate the existence and dissolution of extended defects. {311} extended defects are clearly visible in self-implanted samples but absent in phosphorus doped samples. The extended defects resulting from phosphorus implantation are small (20Å to 60Å diameter) “dot” defects barely resolvable by conventional TEM. methods. Despite the marked differences in defect morphology, diffusion enhancements in the boron marker layer are observable for both species. Results comparing the TED of a buried marker layer after P+ and Si+ show a larger overall effective diffusion length results after high dose (1x1014 cm−2) phosphorus implants. Visible defects in phosphorus implanted silicon are not the only source of TED, suggesting the existence of sub-microscopic phosphorus interstitial clusters (PIC). This provides important insight into the affect of phosphorus on TED.

Properties of Gallium Disorder and Gold Implants in GaN

2000 ◽  
Vol 647 ◽  
Author(s):  
W. Jiang ◽  
W.J. Weber ◽  
S. Thevuthasan ◽  
V. Shutthanandan
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
High Mobility ◽  
Surface Region ◽  
Intermediate Stage ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
The Mean ◽  
Fluence Range

AbstractEpitaxial single-crystal GaN films on sapphire were implanted 60° off the <0001> surface normal with 1 MeV Au2+ or 3 MeV Au3+ over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He+ Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near- surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. During the thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au3+ indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm2) applied at 300 K.

Rutherford Backscattering Spectrometry Analysis of Shallow Sb-Implanted Si

1988 ◽  
Vol 100 ◽  
Author(s):  
Mark C. Ridgway ◽  
J. L. Whitton ◽  
P. J. Scanlon ◽  
A. A. Naem
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Surface ◽  
Nitrogen Atmosphere ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis ◽  
Projected Range ◽  
Implantation Damage ◽  
Glancing Angle ◽  
Secondary Ion

ABSTRACTRapid thermal annealing (RTA) of shallow Sb-implanted Si has been studied with Rutherford Backscattering Spectrometry (RBS). Single crystal Si wafers were implanted with Sb at energies of 16, 32 and 48 keV and doses of 5×1014 and 1×1015/cm2. RTA and reference furnace anneals in a nitrogen atmosphere were done to activate the dopant and remove implantation damage. Glancing-angle RBS measurements were used to determine the Sb depth distributions. Dopant profiles obtained with RBS analysis were compared with Secondary Ion Mass Spectrometry results and TRIM code calculations. RBS measurements of the projected range and range straggle did not differ significantly from TRIM code calculations. Following annealing, significant Sb diffusion from the as-implanted peak was apparent. Sb accumulation at the substrate surface was pronounced, especially for furnace-annealed samples.

Comparison of the Electromigration Behavior of Al(MgCu) with Al(Cu) and Al(SiCu)

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Li ◽  
Ann Witvrouw ◽  
Sing Jin ◽  
Hugo Bender ◽  
Karen Maex ◽  
...  
Keyword(s):  
Surface Segregation ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Time To Failure ◽  
Experimental Conditions ◽  
Plan View ◽  
Transmission Electron ◽  
Strong Surface ◽  
Mg Addition

ABSTRACTMg is one of the elements that are regarded as having a beneficial effect on the Al electromigration (EM) lifetime. In this paper, we compare the EM behavior of 0.4 μm wide passivated Al-1%Mg-0.5%Cu, Al-0.5%Cu and Al-l%Si-0.5%Cu lines. Plan-view transmission electron microscopy and focused ion beam imaging reveal that Al(MgCu) film undergoes bimodal grain growth. Auger electron spectroscopy and secondary ion mass spectrometry show a strong surface segregation and a severe bulk depletion of Mg. Additionally the line-width dependence of the rate of the resistivity decay during aging shows also a different behavior for Al(MgCu) compared to Al(Cu) and Al(SiCu). All these findings are consistent with the EM results that Al(MgCu), processed with our experimental conditions, has both the lowest median time to failure and deviation in time to failure. The results are discussed in the light of the effect of Mg addition on the microstructure and of the great surface activity of Mg.

Ion Beam Induced Modifications of Biocompatible Polymer

2015 ◽  
Vol 239 ◽  
pp. 149-160
Author(s):  
A.M. Abdul-Kader ◽  
Andrzej Turos
Keyword(s):  
Friction Coefficient ◽  
Surface Properties ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Properties ◽  
Surface Region ◽  
Ion Bombardment ◽  
Hydrogen Release ◽  
Nuclear Reaction Analysis ◽  
Near Surface

Ion beam bombardment has shown great potential for improving the surface properties of polymers. In this paper, the ion beam-polymer interaction mechanisms are briefly discussed. The main objective of this research was to study the effects of H-ion beam on physico-chemical properties of Ultra-high-molecular-weight polyethylene (UHMWPE) as it is frequently used in biomedical applications. UHMWPE was bombarded with 65 keV H-ions to fluences ranging from 1x1014–2x1016 ions/cm2. Changes of surface layer composition produced by ion bombardment of UHMWPE samples were studied. The hydrogen release and oxygen uptake induced by ion beam bombardment were determined by Nuclear reaction analysis (NRA) using the 1H(15N, αγ)12C and Rutherford backscattering spectrometry (RBS), respectively. Tribological and hardness properties at the polymer near surface region were studied by means of friction coefficient and micro-hardness testers, respectively. Wettability of the bombarded surfaces was determined by measuring the contact angle for distilled water. The obtained results showed that the ion bombardment induced hydrogen release increases with the increasing ion fluence. An important effect observed, was the rapid oxidation of samples, which occurs after exposure of bombarded samples to air. These effects resulted in important modifications of the surface properties of bombarded material such as change of friction coefficient, hardness and improved wettability.

Ion beam processing of LiNbO3

1986 ◽  
Vol 1 (1) ◽  
pp. 104-113 ◽  
Author(s):  
B. R. Appleton ◽  
G. M. Beardsley ◽  
G. C. Farlow ◽  
W. H. Christie ◽  
P. R. Ashley
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Scattering ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Alternative Techniques ◽  
Surface Decomposition ◽  
Secondary Ion

Ion implantation and ion beam mixing have been investigated as alternative techniques to hightemperature diffusion for introducing dopants into LiNbO3. Heavy ion bombardment at both 77 and 300 K initiated a near-surface decomposition causing Li to diffuse to the surface where it formed a nonuniform agglomerate. The damage and annealing characteristics of this effect were studied by ion scattering/channeling, secondary ion mass spectrometry, and optical microscopy. The origins of the surface decomposition are discussed along with possible solutions, and selected samples were evaluated for waveguide properties.

Temperature Dependence of Compositional Disordering of Gaas-Alas Superlattices During Mev Kr Irradiation

1990 ◽  
Vol 198 ◽  
Author(s):  
R. P. Bryan ◽  
L. M. Miller ◽  
T. M. Cockerill ◽  
J. J. Coleman ◽  
J. L. Klatt ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Miscibility Gap ◽  
Enhanced Diffusion ◽  
Specimen Temperature ◽  
Radiation Enhanced Diffusion ◽  
Increasing Temperature ◽  
Secondary Ion

ABSTRACTThe influence of the specimen temperature during MeV Kr irradiation on the extent of compositional disordering in GaAs-AlAs superlattices (SLs) has been determined. We have investigated whether radiation-enhanced diffusion (RED) could be employed to reduce the dose required to completely disorder a SL by ion implanation. Metalorganic chemical vapor deposition grown GaAs-AlAs SLs were implanted with 0.75 MeV Kr to a dose of 2×1016 cm−2 at various sample temperatures ranging from 133 K to 523 K. The extent of disordering induced by the irradiations was determined by Rutherford backscattering spectrometry and secondary ion mass spectrometry. For low temperature irradiations (133 K to 233 K), complete intermixing of the SL is observed. However, the extent of intermixing of the SL decreases with increasing specimen temperature between room temperature and 523 K. We propose two possible explanations to interpret these results: (i) that the amount of ion beam mixing decreases with increasing temperature; and (ii) that the RED coefficient is negative which suggests the existence of a miscibility gap in the GaAs-AlAs SL system.

Synthesis of Hard Nitride Coatings by ion Beam Assisted Deposition

1997 ◽  
Vol 504 ◽  
Author(s):  
J. D. Demaree ◽  
C. G. Fountzoulas ◽  
J. K. Hirvonen ◽  
M. E. Monserrat ◽  
G. P. Halada ◽  
...  
Keyword(s):  
Stress State ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Source ◽  
Experimental Conditions ◽  
Ion Beam Assisted Deposition ◽  
Nitride Coatings ◽  
Coating Composition ◽  
Nitrogen Ions

ABSTRACTIon beam assisted deposition (IBAD) has been used to deposit chromium nitride coatings using 1200 eV nitrogen ions from an RF-type ion source and thermally evaporated chromium. The ion/atom arrival ratio R was varied from 0 to 8 to modify the coating composition, microstructure, growth rate and stress state in order to optimize the properties of the material for use as a possible substitute for electroplated chromium in a number of anti-corrosion and tribological applications. The coatings were examined using Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy, and contained up to 44 at % nitrogen in a mixture of bcc Cr-N, Cr2N, and CrN. The microstructure of the coatings was examined by scanning electron microscopy, and the tribological behavior of the coatings was examined using an automated scratch testing and nanoindentation. XPS examination of the coatings indicates that nitrogen near the surface was bound to the metal as CrN and Cr2N in most of the coatings studied by XPS, which is expected to significantly affect their corrosion behavior. The high R values needed to form large amounts of the CrN phase in the bulk of the coating causes significant sputtering during deposition. This study indicates that it is not possible to form a coating consisting solely of cubic CrN by IBAD under these experimental conditions (room temperature substrate and partial pressure of nitrogen of 1.8 × 10−2 Pa). Nevertheless, the IBAD coatings produced were hard, in a compressive stress state, and highly adherent, all properties that make them candidates for use in selected Army applications.

scholarly journals Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111) Studied by Ion Beam Analysis Methods

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
K. Drogowska ◽  
S. Flege ◽  
C. Schmitt ◽  
D. Rogalla ◽  
H.-W. Becker ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Resonance Energy ◽  
Nuclear Reaction Analysis ◽  
Hydrogen Charging ◽  
Surface Hydrogen ◽  
Beam Analysis ◽  
Titanium Dioxide Thin Films

Titanium and titanium dioxide thin films were deposited onto Si(111) substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS). The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM). After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS) and nuclear Reaction Analysis (N-15 method), using a15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part) and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

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