Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
P. H. Keys ◽  
J. H. Li ◽  
E. Heitman ◽  
P. A. Packan ◽  
M. E. Law ◽  
...  
Keyword(s):  
Species Interactions ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Effective Diffusion ◽  
Chemical Species ◽  
High Dose ◽  
Extended Defects ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Marker Layer

ABSTRACTExtended defects resulting from ion implantation are believed to act in some cases as a driving force behind transient enhanced diffusion (TED). We use secondary ion mass spectrometry (SIMS) to study the diffusion enhancements of an underlying boron doped spike after creating implant damage in the near surface region. Diffusion enhancements are compared for silicon implants and phosphorus implants to distinguish between factors related to chemical species interactions versus those related to ion beam damage. Transmission electron microscopy (TEM) is used to investigate the existence and dissolution of extended defects. {311} extended defects are clearly visible in self-implanted samples but absent in phosphorus doped samples. The extended defects resulting from phosphorus implantation are small (20Å to 60Å diameter) “dot” defects barely resolvable by conventional TEM. methods. Despite the marked differences in defect morphology, diffusion enhancements in the boron marker layer are observable for both species. Results comparing the TED of a buried marker layer after P+ and Si+ show a larger overall effective diffusion length results after high dose (1x1014 cm−2) phosphorus implants. Visible defects in phosphorus implanted silicon are not the only source of TED, suggesting the existence of sub-microscopic phosphorus interstitial clusters (PIC). This provides important insight into the affect of phosphorus on TED.

Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

1999 ◽  
Vol 568 ◽  
Author(s):  
Giovanni Manninoo ◽  
Nicholas E.B. Cowem ◽  
Peter A. Stolk ◽  
Fred Roozeboom ◽  
Hendrik G.A. Huizing ◽  
...  
Keyword(s):  
Point Defects ◽  
Ostwald Ripening ◽  
Ion Beam ◽  
Extended Defects ◽  
Defect Band ◽  
Enhanced Diffusion ◽  
Dissociation Energies ◽  
Marker Layer ◽  
High Supersaturation ◽  
Very High

ABSTRACTThe ripening of ion-beam generated point defects into extended defects has been investigated in detail. The interstitial supersaturation has been extracted from boron marker-layer diffusion after annealing under non-equilibrium defect conditions. We measured a very high initial supersaturation followed by a decrease over many orders of magnitude with a characteristic “plateau” related to the presence of {113} defects. A continuum inverse model has been used to properly describe the ripening of point defects into clusters and their evolution in the presence of a remote sink, e.g. the surface. It evidences that a nonconservative Ostwald ripening process takes place inside the defect band during the annealing and sustains the interstitial supersaturation. The model reveals moreover an oscillatory behaviour of dissociation energies of the nanometer-sized defects which are responsible for the initial high supersaturation. These defects are believed to be {113} precursors.

Device Parametric Shift Mechanism Caused by Boron Halo Redistribution Resulting from Dose Rate Dependence of SDE Implant

2005 ◽  
Vol 864 ◽  
Author(s):  
Ukyo Jeong ◽  
Jinning Liu ◽  
Baonian Guo ◽  
Kyuha Shim ◽  
Sandeep Mehta
Keyword(s):  
Surface Region ◽  
Amorphous Region ◽  
Amorphous Layer ◽  
High Dose ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Dose Rates ◽  
Pile Up

AbstractChange in dopant diffusion was observed for Arsenic source drain extension (SDE) implants when they were performed at various dose rates. The high dose SDE implant amorphizes the surface of the silicon substrate and the thickness of the amorphous layer is strongly influenced by the rate of dopant bombardment. It is well known that the ion implantation process introduces excess interstitials. While the amorphous region is completely re-grown into single crystal during subsequent anneal without leaving behind extended defects, interstitials that are injected beyond the amorphous layer lead to formation of {311} defects or dislocation loops in the end of range region. During thermal processing, these extended defects dissolve, release interstitials, which in turn lead to transient enhanced diffusion of underlying Boron halo dopant. Dopant depth profiles measured by SIMS revealed different amount of Boron pile-up in the near surface region, corresponding to different SDE implant dose rates. In CMOS devices, this surface pile-up would correlate with a Boron pile-up in the channel region that would lead to a shift in transistor characteristics. Through this investigation, we were able to explain the mechanism causing device characteristics shift resulted from SDE implant with the same dose and energy but different dose rates.

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
L. S. Robertson ◽  
P. N. Warnes ◽  
K. S. Jones ◽  
S. K. Earles ◽  
M. E. Law ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Species ◽  
Amorphous Layer ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Species Effect ◽  
Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

Characterization of Si, SiGe and SOI Structures Using Photoluminescence

1999 ◽  
Vol 588 ◽  
Author(s):  
V. Higgs
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Surface Region ◽  
Misfit Dislocations ◽  
Near Surface ◽  
Pl Mapping ◽  
Excitation Laser ◽  
Pl Intensity ◽  
P Type

AbstractA new Photoluminescence (PL) method has been developed to detect defects in the near surface region of Si wafers and Si-on-insulator (SOI) structures. Wafer maps (up to 300 min diameter) can be readily acquired and areas of interest can be scanned at high resolution (≈1 μm). The excitation laser beam is modulated to confine the photogenerated carriers; defects are observed due to the localised reduction of the carrier lifetime. Si p-type (10 Ohm.cm) wafers were intentionally contaminated with various levels of Ni and Fe (1×109−5×1010 atoms/cm2) and annealed. The PL intensity was observed to decrease due to the metal related non-radiative defects. Whereas in contrast, for Cu, (1×109−5×1010 atoms/cm2) the PL intensity actually increased initially and reached a maximum value at 5×109 atoms/cm2. It is suggested that during contamination the Cu related defects have complexed with existing defects (that have stronger recombination properties) and increased the PL. Further Cu contamination (1×1010−5×1010 atoms/cm2) produced a reduction in the PL intensity. PL mapping of strained SiGe epilayers showed that misfit dislocations can be detected and PL can be used to evaluate material quality.PL maps of SOI bonded wafers revealed that the non-bonded areas, voids or gas bubbles could be detected. This was confirmed using defect etching and polishing, voids as small as ≈30 μm in diameter could be detected. SOI wafers fabricated using the separation by implanted oxygen (SIMOX) technique were also analysed, variations in the recombination properties of the layer could be observed. Further inspection using transmission electron microscopy (TEM) revealed that the defects were non-uniformities of the buried oxide covering several microns and containing tetrahedral stacking faults. Focused ion beam (FIB) milling and secondary ion mass spectrometry (SIMS) showed that these defects were at the Si/SiO2 interface and were chemically different to the surrounding area.

Phosphorus / Silicon Interstitial Annealing After Ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
P. H. Keys ◽  
R. Brindos ◽  
V. Krishnamoorthy ◽  
M. Puga-Lambers ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Extended Defects ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Initial Nucleation ◽  
Primary Damage ◽  
Dopant Atoms ◽  
Phosphorus Doped ◽  
Secondary Ion

AbstractThe release of interstitials from extended defects after ion implantation acts as a driving force behind transient enhanced diffusion (TED). Implantation of Si+ ions into regions of phosphorus-doped silicon provides experimental insight into the interaction of silicon interstitials and dopant atoms during primary damage annealing. The presence of phosphorus influences the morphology of secondary defects during initial nucleation. Transmission electron microscopy (TEM) is used to differentiate between defect types and quantify the interstitials trapped in extended defects. This analysis reveals that phosphorus results in a reduction of interstitials trapped in observable extended defects. The interstitial flux released from the implanted region is also affected by the phosphorus doping. This phenomenon is closely studied using secondary ion mass spectrometry (SIMS) to monitor diffusion enhancements of dopant layers. Shifts in diffused dopant profiles are correlated with the different morphologies of the extended defects and the decay of the silicon interstitial supersaturation. This correlation is used to understand the interaction of excess silicon interstitials with phosphorus atoms.

Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide

1995 ◽  
Vol 396 ◽  
Author(s):  
A V. Suvorov ◽  
I.O. Usov ◽  
V.V. Sokolov ◽  
A.A. Suvorova
Keyword(s):  
Silicon Carbide ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Radiation Enhanced Diffusion ◽  
Sic Wafer

AbstractThe diffusion of aluminum in silicon carbide during high-temperature A1+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 x 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 x 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

Atom Penetration from A Thin Film into the Substrates During Sputtering by Polyenergetic Ar+ Ion Beam with Mean Energy of 9.4 keV

1994 ◽  
Vol 354 ◽  
Author(s):  
B.A. Kalin ◽  
V.P. Gladkov ◽  
N.V. Volkov ◽  
S.E. Sabo
Keyword(s):  
Penetration Depth ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Interstitial Site ◽  
Experimental Conditions ◽  
Near Surface ◽  
Projected Range ◽  
Compressive Stresses ◽  
Wide Energy

AbstractPenetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar+ ion bombardment of samples having thermally evaporated films of 30-50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar+ ions of 9.4 keV to dose D=lxl0 -10 ion/cm2. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of tT and He+ ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS).During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3...20 times deeper than the projected range of bombarding ions and recoil atoms. This is a “deep action” effect.The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r/rm (r¡ - radius of dopant, rm - radius target of substrate) can play a principal determining role.

Ion beam processing of LiNbO3

1986 ◽  
Vol 1 (1) ◽  
pp. 104-113 ◽  
Author(s):  
B. R. Appleton ◽  
G. M. Beardsley ◽  
G. C. Farlow ◽  
W. H. Christie ◽  
P. R. Ashley
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Heavy Ion ◽  
Ion Scattering ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Alternative Techniques ◽  
Surface Decomposition ◽  
Secondary Ion

Ion implantation and ion beam mixing have been investigated as alternative techniques to hightemperature diffusion for introducing dopants into LiNbO3. Heavy ion bombardment at both 77 and 300 K initiated a near-surface decomposition causing Li to diffuse to the surface where it formed a nonuniform agglomerate. The damage and annealing characteristics of this effect were studied by ion scattering/channeling, secondary ion mass spectrometry, and optical microscopy. The origins of the surface decomposition are discussed along with possible solutions, and selected samples were evaluated for waveguide properties.

Rapid Thermal Annealing of Fib-Implanted Ga Shallow Impurity Profiles

1987 ◽  
Vol 101 ◽  
Author(s):  
C-M. Lin ◽  
A.J. Steckl ◽  
T.P. Chow
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Dose Rate ◽  
High Dose ◽  
Beam Diameter ◽  
Si Substrates ◽  
Concentration Depth Profile ◽  
Shallow Impurity

ABSTRACTIn this paper, we present the results of a study to fabricate shallow p+ n junction using Ga FIB implantation in conjunction with rapid thermal annealing (RTA). A focused 75 KeV ion beam with BO mA/cm2 current density and 0.5 μm beam diameter was used to implant Ga into (100) Si substrates at the doses from 1E13 to 5E15/cm2. The annealing temperature is from 600 °C to 1000 °C for various times, 10–30 sec. Secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP) were used to measure the implanted Ga atomic and carrier concentration depth profiles. As compared to the conventional broad beam (BB) implantation, the FIB implanted impurity concentration depth profile has a longer tail and thus a deeper p+n junction. The damage generated by the high dose rate implantation is possibly responsible for this phenomenon. The results of SRP measurements of the FIB as-implanted samples show no Scif-anneal ing occured during implantations. p+n diodes fabricated using FIB exhibit good junction properties: ideality factor of 1.1, reverse–bias leakage current of below 5 nA/cm2 at -IV, and breakdown voltage of about 35 V.

scholarly journals Reduction of Defect Fluxes Using Dual-Ion-Beam Processing

1993 ◽  
Vol 316 ◽  
Author(s):  
A. Iwase ◽  
L. E. Rehn ◽  
P. M. Baldo ◽  
P. R. Okamoto ◽  
H. Wiedersich ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Dual Beam ◽  
Radiation Enhanced Diffusion ◽  
Simultaneous Irradiation ◽  
Radiation Induced ◽  
Red Radiation

ABSTRACTRadiation-induced segregation (RIS) in Ni-12.7% Si and Cu-1% Au alloys was studied using Rutherford backscattering spectroscopy during He and Ne irradiation at elevated temperatures. During single ion-beam irradiation with 1.5 MeV He, strong RIS of Si toward the surface was observed in Ni-12.7% Si. Simultaneous irradiation with 400 keV Ne and 1.5 MeV He almost completely suppressed the Si segregation, even when the calculated damage production rate by Ne was only a few percent of that by He ions. A similar effect of dual-beam irradiation was observed in the Cu-1% Au alloy, i.e., the rate of near surface Au depletion was strongly reduced under simultaneous irradiation. The present result shows that dual-beam irradiation can be applied to control RIS and RED (Radiation Enhanced Diffusion) during ion beam processing.

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