scholarly journals Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111) Studied by Ion Beam Analysis Methods

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
K. Drogowska ◽  
S. Flege ◽  
C. Schmitt ◽  
D. Rogalla ◽  
H.-W. Becker ◽  
...  
Keyword(s):  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Resonance Energy ◽  
Nuclear Reaction Analysis ◽  
Hydrogen Charging ◽  
Surface Hydrogen ◽  
Beam Analysis ◽  
Titanium Dioxide Thin Films

Titanium and titanium dioxide thin films were deposited onto Si(111) substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS). The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM). After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS) and nuclear Reaction Analysis (N-15 method), using a15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part) and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Ion Beam Techniques for Low K Materials Characterization

1998 ◽  
Vol 511 ◽  
Author(s):  
H. Bakhru ◽  
A. Kumar ◽  
T. Kaplan ◽  
M. Delarosa ◽  
J. Fortin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Ion Beam Analysis ◽  
Analytical Technique ◽  
Analysis Techniques ◽  
Teflon Af ◽  
Beam Analysis ◽  
Low K

ABSTRACTIon beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

scholarly journals Status of Ion Beam Modification and Analysis of Materials at STU MTF

2018 ◽  
Vol 26 (43) ◽  
pp. 9-16
Author(s):  
Jozef Dobrovodský ◽  
Dušan Vaňa ◽  
Matúš Beňo ◽  
Anna Závacká ◽  
Martin Muška ◽  
...  
Keyword(s):  
Materials Science ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
First Year ◽  
Elastic Recoil ◽  
Ion Beam Modification ◽  
University Of Technology ◽  
Ion Accelerator ◽  
Beam Analysis

Abstract The new Ion Beam Centre (IBC) equipped with 6 MV tandem ion accelerator and 500 kV ion implanter systems was built at the Slovak University of Technology, Faculty of Materials Science and Technology (STU MTF). The facility provides Ion Beam Modification of Materials (IBMM) and Ion Beam Analysis (IBA), which includes Rutherford Backscattering Spectrometry (RBS), Particle Induced X-ray Analysis (PIXE), Elastic Recoil Spectrometry (ERDA) and Nuclear Reaction Analysis (NRA). Presented are selected experimental procedures carried out in the IBC during the first year of operation. They present examples of a typical IBA performed, such as thin film characterisation in nm to tens of µm range, elemental depth profiles and sensitivity to the light elements enhancement by non-Rutherford cross-section regime application along with the crystalline sample channelling spectra and boron content measurement.

scholarly journals Application of ion beam analysis for the characterization of SiC- and DLC-thin films

2020 ◽  
Vol 15 ◽  
pp. 269
Author(s):  
F. Noli ◽  
P. Misaelides ◽  
M. Kokkoris ◽  
J. P. Riviere
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Rutherford Backscattering Spectrometry ◽  
Protective Coatings ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Silicon Carbon ◽  
Beam Analysis

Three series of protective coatings (thickness ca. 200-300 nm) were prepared on the surface of Ti-Al-V alloy (TA6V): silicon carbide (SiC) films produced by ion sputtering (I), silicon carbide films and subjected to Dynamic Ion Mixing (DIM) during the deposition procedure (II) and Diamond Like Carbon (DLC) films produced by ion beam deposition (III). The chemical composition (Si, C and O) of the films was determined using ion beam analysis techniques. The silicon, carbon and oxygen depth distribution was determined by proton Rutherford backscattering spectrometry (p-RBS) and using the resonances at 4.265 and 3.035 MeV of the 12C(α,α)12C and 16O(α,α)16O interactions respectively. The ratio of Si:C was found to be close to the stoichiometric one. The corrosion resistance of the coated samples was tested under strong aggressive conditions (5M HCl at 50 oC). The investigation following the corrosion attack showed that the thickness of the films remained practically unchanged. Only slight diffusion and dissolution effects were observed indicating the good quality of the produced thin films.

Oxygen uptake of InN thin films as determined by ion beam analysis

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3736-3739 ◽  
Author(s):  
S.M. Durbin ◽  
P.A. Anderson ◽  
A. Markwitz ◽  
J. Kennedy
Keyword(s):  
Thin Films ◽  
Oxygen Uptake ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

THE NEW LOW ENERGY ION BEAM ANALYSIS FACILITY AT MAPUTO UNIVERSITY

1995 ◽  
Vol 05 (04) ◽  
pp. 249-253
Author(s):  
R.J. UTUI ◽  
N.P.O. HOMMAN ◽  
K.G. MALMQVIST
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Proton Accelerator ◽  
Nuclear Reaction Analysis ◽  
Beam Diagnostics ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Beam Analysis ◽  
Set Up ◽  
Eduardo Mondlane University

A new Ion Beam Analysis (IBA) facility which was recently installed in the Department of Physics of the Eduardo Mondlane University of Maputo, Mozambique, is described. The set up is based on a low energy (500 keV) Van de Graaff proton accelerator and is intended to be used in particle induced X-ray emission (PIXE), Rutherford Backscattering (RBS) and nuclear reaction analysis (NRA). Preliminary experiments on beam diagnostics were performed successfully and the followed procedure is described.

scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Ion beam analysis of laser-deposited high Tc YBa2Cu3O7 superconducting thin films

1990 ◽  
Vol 5 (9) ◽  
pp. 1793-1798 ◽  
Author(s):  
Rajiv K. Singh ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Elastic Scattering ◽  
Cross Section ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Scattering Cross Section ◽  
Superconducting Thin Films ◽  
Ion Channeling ◽  
Scattering Cross ◽  
Proton Elastic Scattering

We have performed Rutherford backscattering spectrometry, non-Rutherford proton elastic scattering, and axial ion channeling analysis to determine the composition, the crystallinity, and the epitaxial quality of YBa2Cu3O7 superconducting thin films on (100) SrTiO3 and (100) yttria stabilized zirconia (YSZ) substrates. YBa2Cu3O7 superconducting thin films were fabricated both by high and low temperature laser ablation techniques. The former method requires high temperature annealing in oxygen to recover the superconducting properties, whereas in the latter method as-deposited in situ superconducting thin films are formed at low processing temperatures (500 °C–650 °C). Helium ions in the energy range of 2.0–2.5 MeV were used to determine the relative stoichiometries of the heavier atomic number elements (Y, Ba, Cu) in the film, but are not sensitive enough to determine the relative amount of oxygen in the superconducting phase. The detection sensitivities to oxygen can be greatly enhanced by using the proton elastic scattering [16O(p,p) 16O] reaction, which was found to increase the scattering cross section by a factor of 3 to 5 relative to the Rutherford scattering cross section. The ion-channeling of YBa2Cu3O7 superconducting thin films on (100) SrTiO3 substrates showed excellent minimum channeling yields corresponding to epitaxial growth, but the presence of defects increased the channeling yields for films deposited on (100) YSZ substrates. The ion channeling yields are compared with the microstructure of the films determined by transmission electron microscopy.

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