Rutherford Backscattering Spectrometry Analysis of Shallow Sb-Implanted Si

1988 ◽  
Vol 100 ◽  
Author(s):  
Mark C. Ridgway ◽  
J. L. Whitton ◽  
P. J. Scanlon ◽  
A. A. Naem
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Surface ◽  
Nitrogen Atmosphere ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis ◽  
Projected Range ◽  
Implantation Damage ◽  
Glancing Angle ◽  
Secondary Ion

ABSTRACTRapid thermal annealing (RTA) of shallow Sb-implanted Si has been studied with Rutherford Backscattering Spectrometry (RBS). Single crystal Si wafers were implanted with Sb at energies of 16, 32 and 48 keV and doses of 5×1014 and 1×1015/cm2. RTA and reference furnace anneals in a nitrogen atmosphere were done to activate the dopant and remove implantation damage. Glancing-angle RBS measurements were used to determine the Sb depth distributions. Dopant profiles obtained with RBS analysis were compared with Secondary Ion Mass Spectrometry results and TRIM code calculations. RBS measurements of the projected range and range straggle did not differ significantly from TRIM code calculations. Following annealing, significant Sb diffusion from the as-implanted peak was apparent. Sb accumulation at the substrate surface was pronounced, especially for furnace-annealed samples.

Glancing Angle X-Ray Analysis of Titanium Copper Compound Formations

1984 ◽  
Vol 40 ◽  
Author(s):  
P. A. Psaras ◽  
D. Gupta
Keyword(s):  
Heat Treatment ◽  
Heat Treatment Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Treatment Temperature ◽  
Rutherford Backscattering ◽  
Copper Compound ◽  
X Ray ◽  
Spectrometry Analysis ◽  
Glancing Angle ◽  
Ideal Stoichiometry

AbstractTitanium copper compound formations have been studied via Seeman Bohlin x-ray diffractometry and Rutherford backscattering spectrometry. The heat treatment temperature range was 350°C to 475°C and th heat treatment times ranged from 0 to 240 minutes. Tetragonal gamma TiCu formed first at ˜350°C and was sequentially followed by orthorhombic TiCu3 at ˜400°C. From Rutherford backscattering spectrometry analysis it was concluded that the second TiCu3 compound deviated from ideal stoichiometry to a nonstoichiometric Ti0.88Cu3.12 composition

Manganese in 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 701-704
Author(s):  
Margareta K. Linnarsson ◽  
Aurégane Audren ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Heat Treatment ◽  
Ion Implantation ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
P Type ◽  
Secondary Ion

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals Rutherford backscattering spectrometry analysis of InGaAs nanostructures

2019 ◽  
Vol 37 (2) ◽  
pp. 020601 ◽  
Author(s):  
Grazia Laricchiuta ◽  
Wilfried Vandervorst ◽  
Ian Vickridge ◽  
Matej Mayer ◽  
Johan Meersschaut
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis
Sign in / Sign up

Export Citation Format

Share Document