Synthesis of Hard Nitride Coatings by ion Beam Assisted Deposition

1997 ◽  
Vol 504 ◽  
Author(s):  
J. D. Demaree ◽  
C. G. Fountzoulas ◽  
J. K. Hirvonen ◽  
M. E. Monserrat ◽  
G. P. Halada ◽  
...  
Keyword(s):  
Stress State ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Source ◽  
Experimental Conditions ◽  
Ion Beam Assisted Deposition ◽  
Nitride Coatings ◽  
Coating Composition ◽  
Nitrogen Ions

ABSTRACTIon beam assisted deposition (IBAD) has been used to deposit chromium nitride coatings using 1200 eV nitrogen ions from an RF-type ion source and thermally evaporated chromium. The ion/atom arrival ratio R was varied from 0 to 8 to modify the coating composition, microstructure, growth rate and stress state in order to optimize the properties of the material for use as a possible substitute for electroplated chromium in a number of anti-corrosion and tribological applications. The coatings were examined using Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy, and contained up to 44 at % nitrogen in a mixture of bcc Cr-N, Cr2N, and CrN. The microstructure of the coatings was examined by scanning electron microscopy, and the tribological behavior of the coatings was examined using an automated scratch testing and nanoindentation. XPS examination of the coatings indicates that nitrogen near the surface was bound to the metal as CrN and Cr2N in most of the coatings studied by XPS, which is expected to significantly affect their corrosion behavior. The high R values needed to form large amounts of the CrN phase in the bulk of the coating causes significant sputtering during deposition. This study indicates that it is not possible to form a coating consisting solely of cubic CrN by IBAD under these experimental conditions (room temperature substrate and partial pressure of nitrogen of 1.8 × 10−2 Pa). Nevertheless, the IBAD coatings produced were hard, in a compressive stress state, and highly adherent, all properties that make them candidates for use in selected Army applications.

Synthesis of B-C-N Thin Films by Ion-Beam-Assisted Deposition and Their Mechanical Properties

2000 ◽  
Vol 647 ◽  
Author(s):  
Akihito Matsumuro ◽  
Yoshimasa Kato ◽  
Hidenobu Ohta
Keyword(s):  
Mechanical Properties ◽  
Ion Beam ◽  
Ion Source ◽  
Flow Rate Ratio ◽  
Low Friction ◽  
Hard Materials ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ions ◽  
Argon Ion ◽  
Gas Ratio

AbstractB-C-N films have been synthesized by an ion-beam-assisted deposition technique, in which boron and carbon were evaporated by electron beam and a mixed nitrogen and argon ion beam was simulataneously irradiated onto silicon (100) substrates. The ratio of argon ions to nitrogen ions was varied by the flow rate ratio of Ar and N2 gases fed into the ion source. In this experiment, the influence of the ratio on the mechanical properties and the microstructure were investigated. Nano indentation studies show the maximum hardness up to 23 GPa at the gas ratio of 25.50 %. The films prepared under the appropriate conditions indicated low friction coefficients of 0.04-0.08 against a sapphire ball and excellent wear resistance. The existence of a cubic B-C-N like phase in the film, which has been predicted as one of new hard materials, was revealed by various micro-structural analyses. It was concluded that the excellent mechanical properties prepared at the optimum gas ratio could be attributed to the appearnce of the new cubic like phase.

Computer Simulation of Ion Beam Enhanced Deposition of Titanium Nitride Films

1989 ◽  
Vol 157 ◽  
Author(s):  
Wang Xi ◽  
Zhou Jiankun ◽  
Chen Youshan ◽  
Liu Xianghuai ◽  
Zou Shichang
Keyword(s):  
Computer Simulation ◽  
Titanium Nitride ◽  
Film Growth ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Ion Source ◽  
Nitrogen Gas ◽  
Titanium Layer ◽  
Adsorption Of Nitrogen ◽  
Nitrogen Ions

ABSTRACTA Monte-Carlo computer simulation has been performed to describe, at atomic level, the growth of titanium nitride films formed by ion beam enhanced deposition (IBED). The simulation is based on a random target, fixed free path of moving particles and binary collisions. An alternate process of deposition of titanium atoms and implantation of nitrogen ions is applied instead of the actual continuous and synchronous process of IBED. According to the actual conditions, the adsorption of nitrogen gas, which is leaked out from the ion source, at the fresh titanium layer surface has been considered. In addition, the change of the composition profile and the density profile during film growth is taken into account. It is demonstrated that the width of the intermixed region between the film and substrate increases with the increase of the atomic arrival ratio, R, of implanted nitrogen ions to deposited titanium atoms. When the titanium deposition rate is low, the nitrogen concentration of the film is relatively insensitive to R, indicating that a dominant contribution to the nitrogen concentration is derived from the nitrogen gas leaked out from the ion source. The results obtained in this study are in agreement with the experimental measurements.

Ion Beam assisted Deposition of Titanium Nitride

1988 ◽  
Vol 128 ◽  
Author(s):  
G. K. Hubler ◽  
D. Vanvechten ◽  
E. P. Donovan ◽  
R. A. Kant
Keyword(s):  
Titanium Nitride ◽  
Partial Pressure ◽  
Ion Beam ◽  
Surface Adsorption ◽  
Active Surface ◽  
Sticking Coefficient ◽  
Adsorption Sites ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ions ◽  
Ambient Gas

ABSTRACTThe composition of titanium nitride films prepared by ion beam assisted deposition was studied as a function of the partial pressure of N2 gas in the deposition volume, and as a function of the impingement 'ratio of nitrogen ions (500 eV) to evaporated titanium atoms. The amount of nitrogen incorporated from the ambient gas was derived by subtraction of the fraction introduced by the ion beam. It is shown that the primary effects of ion bombardment are an increase in the sticking coefficient and a reduction in the number of active surface adsorption sites.

Some properties of amorphous hydrogenated silicon nitride prepared by ion-beam-assisted deposition

1991 ◽  
Vol 69 (5) ◽  
pp. 553-557 ◽  
Author(s):  
P. Wilson ◽  
D. C. Craigen ◽  
D. E. Brodie
Keyword(s):  
Uv Light ◽  
Ion Beam ◽  
Wide Band ◽  
Ion Source ◽  
Wide Band Gap ◽  
Hydrogenated Silicon ◽  
Hydrogen Mixture ◽  
Ion Beam Assisted Deposition ◽  
Amorphous Hydrogenated Silicon ◽  
Low Energy Ions

Thin films of a-SiNx:H were deposited using the ion-beam-assisted deposition technique. Silicon was evaporated from a resistively heated carbon crucible while the substrate was bombarded with low-energy ions (100 eV). The feed gas used for the ion source was primarily ammonia (NH3), but a 90% nitrogen, 10% hydrogen mixture was also tried. The nitrogen–hydrogen mixture resulted in nonhydrogenated films. Both the absence of absorption in the IR spectrum owing to oxygen, and the increase in slope of the Tauc plots are evidence of an improvement in film morphology owing to the ion bombardment. The wide band-gap films photoconduct when exposed to UV light. The photoconducting property is lost when the films are exposed to air, and is restored when the samples are thermally annealed in a vacuum.

Chromium nitride coatings produced by ion beam assisted deposition

1996 ◽  
Vol 86-87 ◽  
pp. 309-315 ◽  
Author(s):  
J.D. Demaree ◽  
C.G. Fountzoulas ◽  
J.K. Hirvonen
Keyword(s):  
Ion Beam ◽  
Chromium Nitride ◽  
Ion Beam Assisted Deposition ◽  
Nitride Coatings

Composition and Phase Control for Molybdenum Nitride thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Mandar S. Mudholkar ◽  
Levi T. Thompson
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Arrival Rate ◽  
Molybdenum Nitride ◽  
Effective Energy ◽  
Film Composition ◽  
Ion Beam Assisted Deposition ◽  
Molybdenum Nitrides

AbstractMolybdenum nitrides are active and selective hydrodenitrogenation (HDN) catalysts. The catalytic properties of molybdenum nitrides were found to be dependent on the structural properties. The purpose of research described in this paper was to synthesize molybdenum nitride thin films with well defined structures and stoichiometries using ion beam assisted deposition. The films were deposited by evaporating Mo metal, and simultaneously bombarding the growing film with low energy nitrogen ions. The phase constituents of the films were determined using x-ray diffraction and the film composition was obtained by Rutherford backscattering spectrometry.The film composition and phase constituents were strong functions of the ion-to-atom arrival rate ratio, ion energy and ion angle of incidence. Differences in the film composition for different arrival rate ratios and ion angles of incidence were interpreted based on reflection and sputtering effects. Our results suggest that phase formation was governed by the effective energy density per deposited atom. Evaluation of the effective energy density per deposited atom and its physical significance in ion beam assisted deposition is discussed.

Ion Sources for Ion Beam Assisted Thin Film Deposmon

1995 ◽  
Vol 396 ◽  
Author(s):  
Igor V. Svadkovsk ◽  
Anatoly P. Dostanko
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Sources ◽  
Inert Gases ◽  
Anode Layer ◽  
High Current ◽  
Ion Beam Assisted Deposition ◽  
Ion Energies ◽  
Extended Range ◽  
Basic Distinction

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.

Titanium nitride coatings obtained using new apparatus for ion beam assisted deposition

1991 ◽  
pp. 150-154
Author(s):  
M. Bonelli ◽  
L. Calliari ◽  
M. Elena ◽  
M.A. Ghabashy ◽  
L.A. Guzman ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Nitride Coatings ◽  
New Apparatus
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