Rapid Thermal Annealing of Pre-Amorphized B and BF2-Implanted Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
I.D. Calder ◽  
H.M. Naguib ◽  
D. Houghton ◽  
F.R. Shepherd
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Concentration ◽  
Electrical Activation ◽  
Halogen Lamp ◽  
Dislocation Loops ◽  
Sheet Resistivity ◽  
Crystalline Substrate ◽  
Concentration Peak ◽  
Residual Damage

ABSTRACTShallow p+n junctions have been formed through a combination of pre-amorphization of the silicon surface by implantation of 28Si, 33Ar, or 73Ge, low energy implantation of boron or BF2+, and rapid thermal annealing (RTA) in a tunqsten halogen lamp system. Both pre-amorphization and RTA are required to form a shallow (<0.25 μm) junction, for either boron or BF2+. Arqon pre-amorphization results in poor electrical activation of the boron, while germanium gives the lowest sheet resistivity, but is responsible for a deep boron tail during implantation. The residual damage is characterized by a plane of dislocation loops centred either close to the boron concentration peak, for B+ implantation into a crystalline substrate, or at the original amorphous-crystalline interface, for pre-amorphized specimens.

Ultra-Rapid Thermal Process for ULSIs

2008 ◽  
Vol 573-574 ◽  
pp. 319-324 ◽  
Author(s):  
Kyoichi Suguro
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Process ◽  
Impurity Diffusion ◽  
Electrical Activation ◽  
Halogen Lamp ◽  
Next Generation ◽  
Rapid Thermal Process ◽  
Good Balance

This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.

The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing

1992 ◽  
Vol 39 (1) ◽  
pp. 176-183 ◽  
Author(s):  
J.-L. Lee ◽  
L. Wei ◽  
S. Tanigawa ◽  
T. Nakagawa ◽  
K. Ohta ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Electrical Activation

Stability of Heavily Doped Si Formed by As+ Implantation and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
Muhammad Z. Numan ◽  
Z. H. Lu ◽  
W. K. Chu ◽  
D. Fathy ◽  
J. J. Wortman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Annealing ◽  
Dislocation Loops ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Heavily Doped ◽  
Sheet Resistance Measurement ◽  
Short Time

ABSTRACTDeactivation of ion implanted and rapid thermal annealed (RTA) metastable arsenic in silicon during subsequent furnace annealing has been studied by sheet resistance measurement, Rutherford backs cat t ering/ channeling (RBS), and transmission electron microscopy (TEM). Following RTA, thermal annealing induces deactivation of the dopant which increases the sheet resistivity monotonically with temperature for a very short time, Dislocation loops are formed near the peak of As concentration at post-anneal temperatures of 750°C or higher, where deactivation rate is fast. At lower temperatures deactivation is accompanied by displacement of As atoms, possibly forming clusters.

Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing

1985 ◽  
Vol 58 (8) ◽  
pp. 3252-3254 ◽  
Author(s):  
S. J. Pearton ◽  
K. D. Cummings ◽  
G. P. Vella‐Coleiro
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Activation

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

A Study of Se+ Implants into Encapsulated GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
R. Gwilliam ◽  
M. A. Shahid ◽  
B. J. Sealy
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Residual Damage ◽  
Lower Mobility ◽  
Interface Strain

ABSTRACTThe effects of implanting Se+ ions through Si N4 layers have been compared with implants into uncapped GaAs. Through nitride implants have a higher residual damage, lower carrier concentration and lower mobility following rapid thermal annealing between 850 and 975 °C. The effect is believed to be due to the interface strain between the encapsulant and the amorphous GaAs.

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