A Study of Se+ Implants into Encapsulated GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
R. Gwilliam ◽  
M. A. Shahid ◽  
B. J. Sealy
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Residual Damage ◽  
Lower Mobility ◽  
Interface Strain

ABSTRACTThe effects of implanting Se+ ions through Si N4 layers have been compared with implants into uncapped GaAs. Through nitride implants have a higher residual damage, lower carrier concentration and lower mobility following rapid thermal annealing between 850 and 975 °C. The effect is believed to be due to the interface strain between the encapsulant and the amorphous GaAs.

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

A Study of Damage in Silicon Created By and P+ Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
Fang Ziwei ◽  
Lin Chenglu ◽  
Tsou Shihchang
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Incident Energy ◽  
Room Temperature ◽  
Concentration Profiles ◽  
Molecular Fragments ◽  
Multiple Collision ◽  
Annealing Behavior ◽  
Intermediate Dose

ABSTRACTThe damage and annealing behavior of <100> Si implanted at room temperature by and P+ at different energies (5-600KeV) and intermediate dose (∼1014/cm2) has been investigated. Experimental results show that the damage created by implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom) reached a maximal value at 100KeV () and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high.

Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Mahony ◽  
P. Mascher
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Positron Lifetime ◽  
Defect Characterization ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Heavily Doped

AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
Li Xu ◽  
Peihsin Tsien ◽  
Zhijian Li
Keyword(s):  
Angular Distribution ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Solubility ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Site Location ◽  
Deactivation Mechanism

ABSTRACTBy using rapid thermal annealing (RTA) we can obtain a me testable carrier concentration which well exceeds the solid solubility of arsenic dopant in silicon. The deactivation of such the supersaturated dopant, however, may result in relaxation of the metastable concentration. This paper describes lattice location of the deactivated arsenic atoms determined by channeling angular distribution. On the basis of the results for lattice site location the deactivation mechanism of supersaturated As in Si is discussed.

Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
B.S. So ◽  
Y.H. You ◽  
H.J. Kim ◽  
Y.H. Kim ◽  
J.H. Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Charge Carrier Concentration ◽  
Furnace Temperature ◽  
Ion Activation ◽  
Hall Effect Measurements

AbstractActivation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration.

Rapid Thermal Annealing of Pre-Amorphized B and BF2-Implanted Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
I.D. Calder ◽  
H.M. Naguib ◽  
D. Houghton ◽  
F.R. Shepherd
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Concentration ◽  
Electrical Activation ◽  
Halogen Lamp ◽  
Dislocation Loops ◽  
Sheet Resistivity ◽  
Crystalline Substrate ◽  
Concentration Peak ◽  
Residual Damage

ABSTRACTShallow p+n junctions have been formed through a combination of pre-amorphization of the silicon surface by implantation of 28Si, 33Ar, or 73Ge, low energy implantation of boron or BF2+, and rapid thermal annealing (RTA) in a tunqsten halogen lamp system. Both pre-amorphization and RTA are required to form a shallow (<0.25 μm) junction, for either boron or BF2+. Arqon pre-amorphization results in poor electrical activation of the boron, while germanium gives the lowest sheet resistivity, but is responsible for a deep boron tail during implantation. The residual damage is characterized by a plane of dislocation loops centred either close to the boron concentration peak, for B+ implantation into a crystalline substrate, or at the original amorphous-crystalline interface, for pre-amorphized specimens.

Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

1987 ◽  
Vol 92 ◽  
Author(s):  
T. Inada ◽  
K. Miyamoto ◽  
A. Nishida
Keyword(s):  
Gallium Arsenide ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Doping Profile ◽  
Lec Gaas

Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm3 are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.

Rapid Thermal Annealing of Si-Implanted GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
D.H. Rosenblatt ◽  
W.R. Hitchens ◽  
S. Shatas ◽  
A. Gat ◽  
D.A. Betts
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Doping Level ◽  
Electrical Activation ◽  
Concentration Profiles ◽  
Conventional Furnace ◽  
Van Der Pauw ◽  
Cr Doping ◽  
Anneal Temperature

ABSTRACTHeatpulse rapid thermal annealing was used to activate Si implants of 3.5 × 1012cm−2 at 100 keV and 1.0 × 1013 and 1.0 × 1014cm−2 at 200 keV into semi-insulating GaAs. The effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated. The annealed samples were characterized with C-V, Van der Pauw, differential Hall, and SIMS measurements. Conventional furnace anneals were carried out for comparison, and in all cases, Heatpulse anneals produced sharper carrier concentration profiles. 84% electrical activation was obtained for the 200 keV, 1.0 × 1013 cm−2 implant after a 950°C, 5 sec. Heatpulse anneal. Capped Heatpulse anneals produced less Cr depletion from the implanted region than furnace anneals.

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