The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing

1992 ◽  
Vol 39 (1) ◽  
pp. 176-183 ◽  
Author(s):  
J.-L. Lee ◽  
L. Wei ◽  
S. Tanigawa ◽  
T. Nakagawa ◽  
K. Ohta ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Electrical Activation

Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing

1985 ◽  
Vol 58 (8) ◽  
pp. 3252-3254 ◽  
Author(s):  
S. J. Pearton ◽  
K. D. Cummings ◽  
G. P. Vella‐Coleiro
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Activation

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

Rapid Thermal Annealing of InP Implanted with Group IV Eleients

1993 ◽  
Vol 300 ◽  
Author(s):  
M.C. Ridgway ◽  
P Kringhoj
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Group Iv ◽  
Electrical Activation ◽  
Temperature Range ◽  
Group Iv Elements

ABSTRACTElectrical activation and carrier mobility have been studied as a function of ion dose and annealing temperature for InP implanted with Group IV elements (Si, Ge and Sn). In general, electrical activation increases with decreasing ion dose and/or increasing annealing temperature. Si and Sn exhibit comparable activation and mobility, superior to that of Ge, over the ion dose and temperature range examined. The relative influences of implantation-induced non-stoichiometry and the amphoteric behaviour of the group IV elements have been investigated. For the latter, the amphoteric behavior of Ge > Si > Sn.

Activation Mechanisms in Ion-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
N. Morris ◽  
B. J. Sealy
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Electrical Activation ◽  
Annealing Stage ◽  
Activation Mechanisms ◽  
Ion Implanted

ABSTRACTRapid thermal annealing has been used to study the electrical activation mechanisms for magnesium and selenium implants in GaAs. By analysing the changes in electrical activity as a function of annealing time and temperature, a model has been developed which accurately predicts the electrical properties following the post-implant annealing stage. The model has been used to study the activation of other ions, particularly zinc, beryllium, tin and sulphur, the results of which will be compared with those of magnesium and selenium. The results suggest that the mechanism for electrical activation is dominated by the diffusion of gallium, arsenic or vacancies. The paper will present the model and discuss the activation mechanisms of the ions.

Process-Induced Point Defects in Oxidized Silicon Structures

1986 ◽  
Vol 76 ◽  
Author(s):  
P. J. Caplan ◽  
E. H. Poindexter ◽  
P. K. Vasudev ◽  
R. C. Henderson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Ion Beam ◽  
Oxide Interface ◽  
Paramagnetic Resonance ◽  
Ion Beam Etching ◽  
Interface Damage ◽  
Silicon Structures ◽  
Electron Paramagnetic

ABSTRACTPoint defects caused by common fabrication methods may increase device susceptibility to radiation or hot carriers. In this study, defects induced by dry and wet oxidation, ion implantation, and rapid thermal annealing are examined by electron paramagnetic resonance. A brief 02 anneal at 900°C is found to be more effective than N2 in transformation of a steam-grown oxide interface to that of a dry oxide. A N2 anneal at 450 °C has little effect, and must be extended to about 2 hr to dessicate the interface. Implants of B, P, and BF2 have no direct effect on the interface, but activation anneal in N2 at 900°C produced large Pb concentration. Implant generates E′ centers in the oxide, which are eliminated by the activation. Rapid thermal annealing below 600°C reduces interface traps, but increases them above 700°C, with severe oxide and interface damage at 1100 °C. Electron-beam lithography and plasma- or ion-beam etching are discussed briefly.

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