Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization

Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers grown by the Vapor Liquid Solid (VLS) method. The crystalline quality of the whiskers in both methods is the same. However, in VLS, a crystalline substrate is required, in contrast to the amorphous one in Ni-MILC for the growth of single crystalline whiskers. Moreover, whiskers grown by VLS have a polygonal cross-section with their diameter determined by the diameter of the hemispherical metallic catalysts. On the other hand, in the Ni-MILC, the cross-section of the whiskers depends on the size of the NiSi2 grain from which they are emanated. This was confirmed by observing the crossing whiskers and the rotational Moiré patterns in the crossing area. The structure of disturbed short and thin nonlinear branches on the side-walls of the whiskers was studied. In the whiskers grown by the VLS method, significant contamination occurs by the metallic catalyst degrading the electrical characteristics of the whisker. Such Si whiskers are not compatible with the current CMOS process. Whiskers grown by Ni-MILC at 413 °C are also contaminated by Ni. However, the excess Ni is in the form of tetrahedral NiSi2 inclusions which are coherent with the Si matrix due to the very low misfit of 0.4% between them. These whiskers are compatible with current CMOS process and Thin Film Transistors (TFTs).

A bottom-up approach towards a bacterial consortium for the biotechnological conversion of chitin to l-lysine

Chitin is an abundant waste product from shrimp and mushroom industries and as such, an appropriate secondary feedstock for biotechnological processes. However, chitin is a crystalline substrate embedded in complex biological matrices, and, therefore, difficult to utilize, requiring an equally complex chitinolytic machinery. Following a bottom-up approach, we here describe the step-wise development of a mutualistic, non-competitive consortium in which a lysine-auxotrophic Escherichia coli substrate converter cleaves the chitin monomer N-acetylglucosamine (GlcNAc) into glucosamine (GlcN) and acetate, but uses only acetate while leaving GlcN for growth of the lysine-secreting Corynebacterium glutamicum producer strain. We first engineered the substrate converter strain for growth on acetate but not GlcN, and the producer strain for growth on GlcN but not acetate. Growth of the two strains in co-culture in the presence of a mixture of GlcN and acetate was stabilized through lysine cross-feeding. Addition of recombinant chitinase to cleave chitin into GlcNAc2, chitin deacetylase to convert GlcNAc2 into GlcN2 and acetate, and glucosaminidase to cleave GlcN2 into GlcN supported growth of the two strains in co-culture in the presence of colloidal chitin as sole carbon source. Substrate converter strains secreting a chitinase or a β-1,4-glucosaminidase degraded chitin to GlcNAc2 or GlcN2 to GlcN, respectively, but required glucose for growth. In contrast, by cleaving GlcNAc into GlcN and acetate, a chitin deacetylase-expressing substrate converter enabled growth of the producer strain in co-culture with GlcNAc as sole carbon source, providing proof-of-principle for a fully integrated co-culture for the biotechnological utilization of chitin. Graphical abstract Key Points• A bacterial consortium was developed to use chitin as feedstock for the bioeconomy.• Substrate converter and producer strain use different chitin hydrolysis products.• Substrate converter and producer strain are mutually dependent on each other.

The mechanisms of controlling FCT life and failure mode of Ni-based EBPVD YSZ thermal barrier coatings via the effects of both substrate elements and reactive element doping

Electron-beam physical vapor deposition (EBPVD) of NiCoCrAlY- and Hf-modified bond coats on (1) selected polycrystalline, directionally solidified, (2) single crystalline substrate alloys and (3) an uncoated NiCrAl bond-coat surrogate substrate, all of them covered with standard EBPVD YSZ topcoats were subjected to cyclic furnace testing (FCT) at 1100 °C. The lifetime and spallation failure upon FCT were evaluated. A typical mixed layer zone (MZ) of alumina and zirconia has formed during topcoat processing above the thermally growing oxide layer. The MZ was investigated by energy-dispersive X-ray spectroscopy after intermediate lifetimes and at the end of life. Chemical composition of the MZ and lifespan data were related to each other thus accounting for rate-determining reactions which could be assigned to either cation- or anion-controlled transport mechanisms. These provide a new approach to address FCT life and failure mode of even complex TBC systems containing reactive elements (e.g. Y and Hf). The cation-controlled processes are accelerated according to their concentration by tetravalent elements of the substrates, while the anion-controlled processes are unaffected by this and only adopt a cation-dominated mode when alloying elements of a low valence (e.g. Ti+) reach a supercritical concentration.

Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI3) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI3 showed efficiencies and stabilities superior to those of devices fabricated without NHE.

Molecular dynamics simulation of grain size effect on friction and wear of nanocrystalline zirconium

In this study, molecular dynamics simulation was conducted to investigate the frictional behaviors between diamond tool and zirconium (Zr) substrates at the nanoscale. The effects of grain size on friction and wear were discussed under different sliding velocities. The simulation results showed that the friction forces had similar variation tendencies under different sliding velocities. Besides, the friction responses were stronger at high sliding velocities because of the atomic adhesion while the ploughing effect was more obvious at slower sliding velocity. Moreover, both the friction forces and the wear amounts increased with the decrease in the average grain sizes of the substrates. To explain this phenomenon, the internal mechanism was investigated by using the dislocation extract algorithm and the atomic displacement analyses. The results showed that the [0001]-oriented single crystalline substrate was prone to form continuous dislocation structures moving tangentially along the sliding direction due to the characteristic of Zr's slip systems, whereas grain boundaries conducted the deformation further into the polycrystalline substrates, increasing the contact areas and causing atomic accumulation in front, both resulted in stronger friction responses and wear. Accordingly, with the decrease in average grain sizes, the substrates experienced more severe subsurface damage and the deformation mechanism of nanocrystalline Zr had evolved from dislocation emission to grain boundary rotation and sliding.

Main and side reaction design exceeding the theoretical upper limit of chemical vapor deposition rate

Chemical engineering is a branch of engineering that brings together the principles of chemistry, physics, mathematics and biology to use, produce, design and transform energy and materials. Chemical engineering expert Professor Hitoshi Habuka, who is based at the Faculty of Engineering, Division of Materials Science and Chemical Engineering, Yokohama National University in Japan, is leading a team which is interested in creating advanced semiconductor materials through reaction engineering. One of their focuses in recent years has been on exceeding the epitaxial growth rate limit. Epitaxy - which is an important technique to prepare a crystalline film on a single-crystalline substrate - is essential to the manufacturing of devices and circuits association with electronics and photonics.