Effects of Nitrogen Ion Energy on the Growth Mode of WN Films Deposited by Reactive Ion Beam Sputtering

1992 ◽  
Vol 268 ◽  
Author(s):  
A.H. Benhocine ◽  
F. Meyer ◽  
M. Eizenberg ◽  
D. Bouchier ◽  
S. Kianfar
Keyword(s):  
Ion Beam ◽  
Growth Mode ◽  
Sticking Coefficient ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Si Substrates ◽  
Beam Sputtering ◽  
Electron Spectrometry ◽  
Nitrogen Ion

ABSTRACTWN films were deposited on clean Si substrates by Reactive Ion Beam Sputtering in a UHV system. The growth mode of the films as a function of the nitrogen ion energy was investigated by in situ Auger Electron Spectrometry. The energy of the incident ions was varied from 250 eV to 3 keV. We observed a significant nitridation of the silicon at the very beginning of the deposition. This nitridation is more pronounced for the lower energy and is more reduced for 2 keV-ions. It seems to follow the trend of the film composition: 250 eV-ions and 2 keV-ions result in N-rich films (N/W≈1) and W-rich films (N/W≈0.5), respectively. All these results are discussed in terms of sputtering yield, backscattering and sticking coefficient and are explained by taking into account: first, the interaction between the incident ions and the target, and second, the interaction between the species emitted by the target and the growing film.

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

In-situ epitaxial growth study of Bi/sub 2/(Sr,Ca)/sub 3/Cu/sub 2/O/sub x/ films by ion beam sputtering on cleaved MgO substrates

1991 ◽  
Vol 27 (2) ◽  
pp. 1205-1210 ◽  
Author(s):  
J. Fujita ◽  
T. Yoshitake ◽  
T. Satoh ◽  
T. Ichihashi ◽  
H. Igarashi
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Growth Study ◽  
Beam Sputtering

Aging effect of optical properties on SiO2films grown on Si substrates by ion beam sputtering

2012 ◽  
Author(s):  
Yiqin Ji ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Dandan Liu ◽  
Lishuan Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Aging Effect ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Study of Natural Oxidation of Ultra-Thin Aluminum Layers with In-Situ Resistance Measurement

1999 ◽  
Vol 569 ◽  
Author(s):  
C. Fery ◽  
W.E. Bailey ◽  
K. Yamada ◽  
S.X. Wang
Keyword(s):  
Ion Beam ◽  
Low Noise ◽  
Resistance Measurement ◽  
Ion Beam Sputtering ◽  
Oxidation Rates ◽  
Beam Sputtering ◽  
Noise Data ◽  
Set Up ◽  
Lock In

ABSTRACTExposure to oxygen (1 Torr) at room temperature of thin Al films deposited by UHV ion beam sputtering has been studied using an in-situ resistance measurement set-up. Two lock-in amplifiers allow low noise data acquisition. By monitoring the conductance during deposition and oxidation we can deduce the consumed Al thickness as a function of exposure time (t). It is found that the Al/vacuum interface is diffuse for electron scattering. A two-stage mechanism for natural oxidation is revealed: fast growth (for t<10s) followed by a slow logarithmic growth. A simple model based on interface reactions and place exchange describes the experimental results. The conductance drop after 5 minutes of oxidation is found to decrease for initial Al thicknesses below 30A. This suggests the oxidation rates slow down for thin initial Al thicknesses.

In situ preparation of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films deposited by ion beam sputtering: preliminary results

1991 ◽  
Vol 27 (2) ◽  
pp. 2522-2524 ◽  
Author(s):  
S. Barbanera ◽  
F. Murtas ◽  
L. Scopa ◽  
V. Boffa ◽  
G. Paterno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Preliminary Results ◽  
In Situ Preparation ◽  
Beam Sputtering
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