Study of Natural Oxidation of Ultra-Thin Aluminum Layers with In-Situ Resistance Measurement

1999 ◽  
Vol 569 ◽  
Author(s):  
C. Fery ◽  
W.E. Bailey ◽  
K. Yamada ◽  
S.X. Wang
Keyword(s):  
Ion Beam ◽  
Low Noise ◽  
Resistance Measurement ◽  
Ion Beam Sputtering ◽  
Oxidation Rates ◽  
Beam Sputtering ◽  
Noise Data ◽  
Set Up ◽  
Lock In

ABSTRACTExposure to oxygen (1 Torr) at room temperature of thin Al films deposited by UHV ion beam sputtering has been studied using an in-situ resistance measurement set-up. Two lock-in amplifiers allow low noise data acquisition. By monitoring the conductance during deposition and oxidation we can deduce the consumed Al thickness as a function of exposure time (t). It is found that the Al/vacuum interface is diffuse for electron scattering. A two-stage mechanism for natural oxidation is revealed: fast growth (for t<10s) followed by a slow logarithmic growth. A simple model based on interface reactions and place exchange describes the experimental results. The conductance drop after 5 minutes of oxidation is found to decrease for initial Al thicknesses below 30A. This suggests the oxidation rates slow down for thin initial Al thicknesses.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

In-situ epitaxial growth study of Bi/sub 2/(Sr,Ca)/sub 3/Cu/sub 2/O/sub x/ films by ion beam sputtering on cleaved MgO substrates

1991 ◽  
Vol 27 (2) ◽  
pp. 1205-1210 ◽  
Author(s):  
J. Fujita ◽  
T. Yoshitake ◽  
T. Satoh ◽  
T. Ichihashi ◽  
H. Igarashi
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Growth Study ◽  
Beam Sputtering

In situ preparation of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films deposited by ion beam sputtering: preliminary results

1991 ◽  
Vol 27 (2) ◽  
pp. 2522-2524 ◽  
Author(s):  
S. Barbanera ◽  
F. Murtas ◽  
L. Scopa ◽  
V. Boffa ◽  
G. Paterno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Preliminary Results ◽  
In Situ Preparation ◽  
Beam Sputtering

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

In Situ Deformation Studies of Fe/Al and Fe/Si Multi-Layered Films Prepared by Ion Beam Sputtering

1991 ◽  
Vol 239 ◽  
Author(s):  
K. Kubota ◽  
M. Naoe
Keyword(s):  
Magnetic Properties ◽  
Internal Stress ◽  
Ion Beam ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Beam Sputtering ◽  
In Situ Deformation ◽  
Deformation Measurements

ABSTRACTIn situ deformation measurements of Fe/Al and Fe/Si multi-layered films on thin substrates were made by detecting the curvature of substrates during deposition. The deformation inside of Fe layers corresponding to the compressive and tensile stresses was detected for the Fe/Al and Fe/Si multi-layered films, respectively. For the Fe/Si multi-layered films, the internal stress in Fe layers became from tensile to compressive during deposition under bombardment of Ar Jons. These stresses in Fe layer were closely related to the soft magnetic properties of these multi-layered films. In situ deformation studies may be useful to make sure the effect of internal stress on the magnetic properties of these multi-layered films.

The significance of in situ conditions in the characterization of GaSb nanopatterned surfaces via ion beam sputtering

2011 ◽  
Vol 110 (7) ◽  
pp. 074301 ◽  
Author(s):  
Osman El-Atwani ◽  
J. P. Allain ◽  
Alex Cimaroli ◽  
Anastassiya Suslova ◽  
Sami Ortoleva
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
In Situ Conditions ◽  
Beam Sputtering

Deposition and characterization of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering

1992 ◽  
Vol 7 (8) ◽  
pp. 2003-2016 ◽  
Author(s):  
J.A. Kittl ◽  
W.L. Johnson ◽  
C.W. Nieh
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Film Surface ◽  
Lattice Expansion ◽  
Ion Beam Sputtering ◽  
Orientation Relations ◽  
Deposition Parameters ◽  
Beam Sputtering ◽  
Lattice Distortions

We investigated the in situ growth of YBa2Cu3O7−δ superconducting thin films by a sequential ion beam sputtering technique, studying the relations among deposition parameters, structural and superconducting properties. The films were deposited following the stacking sequence of YBa2Cu3O7−δ, with individual layer thicknesses nominally equal to one monolayer. O2 was supplied during deposition. Predominantly c-axis oriented films were grown on (100) SrTiO3, (100) MgO, and oxidized Si (SiO2/Si) substrates. The microstructure and film-substrate orientation relations were studied by transmission electron microscopy. X-ray studies showed the presence of homogeneous and inhomogeneous strains along the c-direction that persisted after low temperature oxygen anneals. Resistivity measurements showed correlations between the superconducting transition characteristics and the lattice distortions along the c-direction. The effect of deposition parameters on the lattice distortions was investigated, finding that the c-axis lattice parameter was larger in films grown at lower temperatures. This was interpreted in terms of the thermally activated dissociation of O2 at the film surface during growth. We assumed that the c-axis lattice expansion was due to kinetic limitations to the incorporation of oxygen into the film during growth. This led to a consistent description of the results obtained in this work and the O2 pressure dependence of the c-axis lattice expansion reported for other in situ techniques. Studies were performed on films grown by this technique as well as on films grown in situ by magnetron sputtering in an attempt to elucidate the nature of the defect structure causing the c-axis lattice distortions.

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