Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD

1991 ◽  
Vol 224 ◽  
Author(s):  
F.H. Ruddell ◽  
B.M. Armstrong ◽  
H.S. Gamble
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Silicon Substrates ◽  
Epitaxial Silicon

AbstractThis paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.

scholarly journals Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16662-16667 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Andreas Fissel ◽  
Glenn Walker ◽  
Jessica Chai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Large Diameter ◽  
Silicon Substrates

The unique growth mechanism of alternating supply epitaxy enables uniform 3C-SiC to be deposited on multiple large-diameter Si wafers.

Initial stages of the epitaxial silicon carbide film growth on silicon substrates

1989 ◽  
Vol 116 (2) ◽  
pp. K169-K172
Author(s):  
L. I. Berezhinskii ◽  
S. I. Vlaskina ◽  
V. E. Rodionov ◽  
H. A. Shamuratov
Keyword(s):  
Silicon Carbide ◽  
Film Growth ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Silicon Carbide Film

Growth mechanism of silicon carbide films on silicon substrates using C60 carbonization

1995 ◽  
Vol 344 (1-2) ◽  
pp. 23-32 ◽  
Author(s):  
Dong Chen ◽  
Richard Workman ◽  
Dror Sarid
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Silicon Substrates

scholarly journals GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-823-C2-830 ◽  
Author(s):  
F. H. RUDDELL ◽  
B. M. ARMSTRONG ◽  
H. S. GAMBLE
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Epitaxial Silicon ◽  
Thermal Cvd

scholarly journals Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

2016 ◽  
Vol 214 (4) ◽  
pp. 1600437 ◽  
Author(s):  
Atieh R. Kermany ◽  
James S. Bennett ◽  
Victor M. Valenzuela ◽  
Warwick P. Bowen ◽  
Francesca Iacopi
Keyword(s):  
Silicon Carbide ◽  
Chemical Sensing ◽  
Epitaxial Silicon

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

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