scholarly journals GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-823-C2-830 ◽  
Author(s):  
F. H. RUDDELL ◽  
B. M. ARMSTRONG ◽  
H. S. GAMBLE
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Epitaxial Silicon ◽  
Thermal Cvd

Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD

1991 ◽  
Vol 224 ◽  
Author(s):  
F.H. Ruddell ◽  
B.M. Armstrong ◽  
H.S. Gamble
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Silicon Substrates ◽  
Epitaxial Silicon

AbstractThis paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.

scholarly journals Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

2016 ◽  
Vol 214 (4) ◽  
pp. 1600437 ◽  
Author(s):  
Atieh R. Kermany ◽  
James S. Bennett ◽  
Victor M. Valenzuela ◽  
Warwick P. Bowen ◽  
Francesca Iacopi
Keyword(s):  
Silicon Carbide ◽  
Chemical Sensing ◽  
Epitaxial Silicon

Synthesis and in situ growth mechanism of wound silicon carbide nanowires

2019 ◽  
Vol 6 (8) ◽  
pp. 085026
Author(s):  
Mi Yuan ◽  
Ziye Li ◽  
Yujia Zheng ◽  
Hong Cao ◽  
Jun Xue
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
In Situ Growth

Nitrogen doping of epitaxial silicon carbide

2002 ◽  
Vol 236 (1-3) ◽  
pp. 101-112 ◽  
Author(s):  
U Forsberg ◽  
Ö Danielsson ◽  
A Henry ◽  
M.K Linnarsson ◽  
E Janzén
Keyword(s):  
Silicon Carbide ◽  
Nitrogen Doping ◽  
Epitaxial Silicon

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

2009 ◽  
Vol 15 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
Aleksander M. Wrobel ◽  
Agnieszka Walkiewicz-Pietrzykowska ◽  
Marja Ahola ◽  
I. Juhani Vayrynen ◽  
Francisco J. Ferrer-Fernandez ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Chemical Structure ◽  
Microwave Plasma ◽  
Plasma Cvd ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Microwave Plasma Cvd

Growth mechanism and defect structures in epitaxial silicon

1962 ◽  
Vol 7 (83) ◽  
pp. 1847-1860 ◽  
Author(s):  
J. M. Charig ◽  
B. A. Joyce ◽  
D. J. Stirland ◽  
R. W. Bicknell
Keyword(s):  
Growth Mechanism ◽  
Defect Structures ◽  
Epitaxial Silicon

Multiscale simulation for epitaxial silicon carbide growth by chlorides route

2010 ◽  
Vol 518 (6) ◽  
pp. S6-S11 ◽  
Author(s):  
Maurizio Masi ◽  
Alessandro Fiorucci ◽  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Silicon Carbide ◽  
Multiscale Simulation ◽  
Epitaxial Silicon

Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide

2000 ◽  
Vol 338-342 ◽  
pp. 181-184
Author(s):  
K.D. Jamison ◽  
M.L. Kempel ◽  
Richard L. Woodin ◽  
J.D. Shovlin ◽  
D. Beck ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Silicon
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