Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Study of Diamond Nucleation on Silicon Using Direct Negative Carbon Ion Beam Source

1995 ◽  
Vol 396 ◽  
Author(s):  
Y.W. Ko ◽  
Y.O. Ahn ◽  
M.H. Sohn ◽  
Y. Park ◽  
S.I. Kim
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Ion Source ◽  
Silicon Substrates ◽  
Carbon Ions ◽  
Carbon Ion ◽  
Initial Stage ◽  
Initial Nucleation ◽  
Carbon Ion Beam

AbstractThe initial nucleation stages of sp3 bonded amorphous diamond on silicon substrates have been investigated. The energy of the incident carbon ions/atoms is understood as a key parameter for the vapor phase formation of amorphous diamond like carbon coatings. SKION's solid state carbon ion source is used for this study. The ion source is UHV compatible and capable of producing a controlled energy ion beam in the energy range of 5-300 eV. In the initial stage of the deposition, carbon is found to be deposited as a silicon carbide up to a thickness of about 180Á at room temperature. Silicon is diffused to the surface and forms SiC. As the energy of the ion beam increases, the formation of silicon carbide becomes apparent. Further carbon ion bombardment then leads to the formation of an sp3 bonded amorphous diamond film. Post-annealing above 900°C leads to the formation of crystalline silicon resulting in a Si-rich SiC surface due to silicon out-diffusion.

Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

2004 ◽  
Vol 832 ◽  
Author(s):  
Mitsuru Inada ◽  
Ikurou Umezu ◽  
Shukichi Tanaka ◽  
Shinro Mashiko ◽  
Akira Sugimura
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Hydrogen Gas ◽  
Transmission Electron ◽  
Silicon Target ◽  
Gas Atmosphere ◽  
Passivated Silicon

ABSTRACTHydrogen-passivated silicon nanochains were synthesized by pulsed laser ablation of silicon target in hydrogen gas atmosphere at room temperature. When the hydrogen gas pressure was higher than 670Pa, nanochains, which have crystalline silicon core, were formed. Transmission electron microscopy showed the silicon nanochains consist of connections of silicon nanocrystals with mean diameter of 4.6 nm. It is of great interest that the silicon nanochain has crystalline structure without any intentional annealing process. Optical properties of the hydrogen-passivated silicon nanochains were presented.

scholarly journals Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

2020 ◽  
Vol 22 (4) ◽  
pp. 1901173
Author(s):  
Tuan‐Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Karen M. Dowling ◽  
Ananth Saran Yalamarthy ◽  
Toan Dinh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Uv Laser

COMBINED EFFECT OF MECHANICAL GROOVING AND STAIN-ETCHED SURFACE ON OPTICAL AND ELECTRICAL PROPERTIES OF CRYSTALLINE SILICON SUBSTRATES

2014 ◽  
Vol 21 (03) ◽  
pp. 1450041 ◽  
Author(s):  
AHMED ZARROUG ◽  
LOTFI DERBALI ◽  
RACHID OUERTANI ◽  
WISSEM DIMASSI ◽  
HATEM EZZAOUIA
Keyword(s):  
Crystalline Silicon ◽  
Light Trapping ◽  
Front Surface ◽  
Minority Carrier Lifetime ◽  
Combined Effect ◽  
Machining Process ◽  
Silicon Substrates ◽  
Textured Surface ◽  
Crystalline Silicon Solar Cell ◽  
Simple Method

This paper investigates the combined effect of mechanical grooving and porous silicon (PS) on the front surface reflectance and the electronic properties of crystalline silicon substrates. Mechanical surface texturization leads to reduce the cell reflectance, enhance the light trapping and augment the carrier collection probability. PS was introduced as an efficient antireflective coating (ARC) onto the front surface of crystalline silicon solar cell. Micro-periodic V-shaped grooves were made by means of a micro-groove machining process prior to junction formation. Subsequently, wafers were subjected to an isotropic potassium hydroxide ( KOH ) etching so that the V-shape would be turned to a U-shape. We found that the successive treatment of silicon surfaces with stain-etching, grooving then alkaline etching enhances the absorption of the textured surface, and decreases the reflectance from 35% to 7% in the 300–1200 nm wavelength range. We obtained a significant increase in the overall light path that generates the building up of the light trapping inside the substrate. We found an improvement in the illuminated I–V characteristics and an increase in the minority carrier lifetime τeff. Such a simple method was adopted to effectively reinforce the overall device performance of crystalline silicon-based solar cells.

Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

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