scholarly journals Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16662-16667 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Andreas Fissel ◽  
Glenn Walker ◽  
Jessica Chai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Large Diameter ◽  
Silicon Substrates

The unique growth mechanism of alternating supply epitaxy enables uniform 3C-SiC to be deposited on multiple large-diameter Si wafers.

Growth mechanism of silicon carbide films on silicon substrates using C60 carbonization

1995 ◽  
Vol 344 (1-2) ◽  
pp. 23-32 ◽  
Author(s):  
Dong Chen ◽  
Richard Workman ◽  
Dror Sarid
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Silicon Substrates

Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD

1991 ◽  
Vol 224 ◽  
Author(s):  
F.H. Ruddell ◽  
B.M. Armstrong ◽  
H.S. Gamble
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Silicon Substrates ◽  
Epitaxial Silicon

AbstractThis paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Experimental Study of SiC Ceramic Grinding Subsurface Cracks

2014 ◽  
Vol 1027 ◽  
pp. 146-149
Author(s):  
Min Hui Liu ◽  
Fei Hu Zhang ◽  
Guo Dong Lu
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
Large Diameter ◽  
Maximum Depth ◽  
Surface Cracks ◽  
Subsurface Cracks ◽  
Sic Ceramic ◽  
Ceramic Grinding ◽  
The Impact ◽  
Silicon Carbide Ceramics

Silicon carbide ceramics with its excellent physical and mechanical properties have become the preferred material for space large diameter mirror. Diamond wheel grinding is the main way of SiC ceramics forming processing. Subsurface cracks is generated due to the high hardness and brittleness of the material after grinding. In order to remove the impact of cracks, poishing processing with very low efficiency is applied, so it is significant to control the depth of silicon carbide ceramic grinding subsurface cracks and shorten the processing cycle.In this paper grinding experiment of SiC ceramic is conducted. The method of cross-section polishing combined with scanning electron microscope observation is used to research grinding subsurface cracks. The depth of broken surface layer and the maximum depth of sub-surface cracks were proposed to evaluate the grinding subsurface cracks. The result show broken surface layer depth and the maximum depth of sub-surface cracks increase with the decreasement of spindle speed, and increasement of feed rate and grinding depth.

Synthesis and in situ growth mechanism of wound silicon carbide nanowires

2019 ◽  
Vol 6 (8) ◽  
pp. 085026
Author(s):  
Mi Yuan ◽  
Ziye Li ◽  
Yujia Zheng ◽  
Hong Cao ◽  
Jun Xue
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
In Situ Growth
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