Point Defect Injection and Enhanced Sb Diffusion in Si During Co-Si and Ti-Si Reactions

1990 ◽  
Vol 209 ◽  
Author(s):  
J.W. Honeycutr ◽  
G.A. Rozgonyi
Keyword(s):  
Point Defect ◽  
Secondary Ion Mass Spectrometry ◽  
Profile Analysis ◽  
Film Formation ◽  
Excess Vacancy ◽  
Intrinsic Diffusion ◽  
Injection Process ◽  
Defect Injection ◽  
Secondary Ion ◽  
Vacancy Concentrations

ABSTRACTThe effects of Co and Ti silicide film formation on diffusion of buried Sb-doped layers in Si have been investigated. Sb profile analysis by secondary ion mass spectrometry shows that greatly enhanced, non-uniform Sb diffusion occurs during reactions of various thicknesses (30- 300 nm) of Co and Ti by rapid thermal annealing. A simple non-equilibrium intrinsic diffusion model is invoked to estimate time-averaged excess vacancy concentrations. Vacancy concentrations of about 107 times equilibrium values are shown to exist during CoSi2 formation by reaction of a 30 nm Co film at 700°C for 5 min in Ar.Diffusion enhancements at large distances from silicide stripe edges are observed by bevel and etch techniques. These effects tend to decrease with increasing annealing time, indicating that film stresses may play an important role in the interfacial point defect injection process.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

scholarly journals New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

2007 ◽  
Vol 46 (11) ◽  
pp. 7441-7445 ◽  
Author(s):  
M'hamed Boulakroune ◽  
Ahmed El Oualkadi ◽  
Djamel Benatia ◽  
Tahar Kezai
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Profile Analysis ◽  
New Approach ◽  
Ion Mass Spectrometry ◽  
Mass Spectrometry Profile ◽  
Secondary Ion

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

1997 ◽  
Vol 470 ◽  
Author(s):  
S. Gautier ◽  
S. Koumetz ◽  
J. Marcon ◽  
K. Ketata ◽  
M. Ketata ◽  
...  
Keyword(s):  
Point Defect ◽  
Diffusion Model ◽  
Heterojunction Bipolar Transistors ◽  
Secondary Ion Mass Spectrometry ◽  
Bipolar Transistors ◽  
Thermal Treatments ◽  
Chemical Beam Epitaxy ◽  
Gas Source ◽  
Nonequilibrium Conditions ◽  
Secondary Ion

ABSTRACTBeryllium diffusion during post-growth annealing is investigated in InGaAs epitaxial layers. Indeed, this undesirable diffusion may occur during thermal treatments of InGaAs/lnP Heterojunction Bipolar Transistors (HBT's), which can generate a limitation of frequency performances of these devices. Epitaxial structures have then been grown, one set by Chemical Beam Epitaxy (CBE), and another one by Gas Source Molecular Beam Epitaxy (GSMBE). The post-growth Rapid Thermal Annealing (RTA) was then performed, and Secondary Ion Mass Spectrometry (SIMS) has been used to characterize the Be depht profiles.In parallel with our experimental study, we propose two models of Be diffusion in InGaAs in the case of point defect nonequilibrium. First, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a Generalized Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Good agreements between experimental depth profiles and simulated curves have been obtained.

Diffusivity and Diffusion Mechanism of Oxygen in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S.-Tong Lee ◽  
D. Nichols
Keyword(s):  
Mass Spectrometry ◽  
Point Defect ◽  
Point Defects ◽  
Oxygen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Processing Conditions ◽  
Float Zone ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusivities of oxygen in Czochralski Si (CZ-Si) and float-zone Si (FZ-Si) have been measured by using secondary ion mass spectrometry. The diffusivity at 700–1160°C deduced from the outdiffused profiles of oxygen incorporated in CZ-Si shows little or no dependence on processing conditions and can be expressed as D = 0.14 exp(−2.53 eV/kT) cm2/s. Diffusivity at 700–1100°C of oxygen implanted in FZ-Si is insensitive to doses and follows D = 0.13 exp(−2.50 eV/kT) cm2/s, which agrees remarkably well with CZ-Si data. Since large variations in point-defect concentrations existed under the conditions studied, the excellent agreement among the diffusivities leads to the conclusion that point defects in Si have little effect on oxygen diffusion. This demonstrates that oxygen diffuses primarily via an interstitial mechanism in the temperature range studied.

Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon Layer

2001 ◽  
Vol 669 ◽  
Author(s):  
Yukio Nakabayashi ◽  
Hirman I. Osman ◽  
Toru Segawa ◽  
Kazunari Toyonaga ◽  
Satoru Matsumoto ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Temperature Dependence ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Intrinsic Diffusion Coefficient ◽  
Intrinsic Diffusion ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTSilicon self–diffusion coefficients were measured in intrinsic and extrinsic silicon from870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si isobtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

Rapid determination of the original boron isotopic composition from altered basaltic glass by in situ secondary ion mass spectrometry

2020 ◽  
Vol 35 (2) ◽  
pp. 238-245 ◽  
Author(s):  
Miaohong He ◽  
Xiaoping Xia ◽  
Xiaolong Huang ◽  
Jinlong Ma ◽  
Jieqiong Zou ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Profile Analysis ◽  
Rapid Determination ◽  
Basaltic Glass ◽  
The Core ◽  
Secondary Ion ◽  
Isotopic Profile ◽  
Boron Isotopic Composition

Rapid determination of the original boron composition from altered basaltic glass by SIMS boron isotopic profile analysis from the core to rim.

Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

2001 ◽  
Vol 669 ◽  
Author(s):  
Aihua Dan ◽  
Arthur F. W. Willoughby ◽  
Janet M. Bonar ◽  
Barry M. McGregor ◽  
Mark G. Dowsett ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Silicon Germanium ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Time ◽  
Injection Technique ◽  
Boron Diffusion ◽  
Rapid Thermal Anneal ◽  
Vacancy Defects ◽  
Defect Injection

ABSTRACTThe effect of point defect injection on the diffusion of antimony and boron in silicon and silicon-germanium alloys has been studied by comparison of inert with injection diffusions. In this work, Sb and B in Si were used as control wafers to investigate Sb and B diffusion behavior in Si0.9Ge0.1. The point defect injection technique was carried out by rapid thermal annealing (RTA) Sb and B in Si and Si0.9Ge0.1 samples with the various surface coatings in either oxygen or ammonia atmospheres to inject either interstitial or vacancy defects. The diffusion profiles for as-grown and RTA annealed samples were measured by Secondary Ion Mass Spectrometry (SIMS). Diffusivities for B in Si and Si0.9Ge0.1 were obtained using computer simulations of the measured boron profiles for their annealed samples. Sb diffusion in Si and Si0.9Ge0.1 was found enhanced by vacancy injection and retarded by interstitial injection. The enhanced B diffusion in Si and Si0.9Ge0.1 was found by interstitial injection. These results confirm that Sb diffusion in Si0.9Ge0.1 is primarily dominated by vacancy-mediated mechanism, while B diffuses in Si0.9Ge0.1 by an interstitially mediated mechanism. The effect of the RTA diffusion time on the B diffusion in Si and Si0.9Ge0.1 has also been investigated. The diffusivity versus diffusion time of B in Si and Si0.9Ge0.1 for inert and injection samples is presented. It was found that the shorter annealing time had the faster diffusion. This suggested that it caused by transient diffusion effect arising from point defects.

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