Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon Layer

2001 ◽  
Vol 669 ◽  
Author(s):  
Yukio Nakabayashi ◽  
Hirman I. Osman ◽  
Toru Segawa ◽  
Kazunari Toyonaga ◽  
Satoru Matsumoto ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Temperature Dependence ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Intrinsic Diffusion Coefficient ◽  
Intrinsic Diffusion ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTSilicon self–diffusion coefficients were measured in intrinsic and extrinsic silicon from870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si isobtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.

Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound Semiconductors

1998 ◽  
Vol 527 ◽  
Author(s):  
H. Bracht ◽  
E. E. Haller ◽  
K. Eberl ◽  
M. Cardona ◽  
R. Clark-Phelps
Keyword(s):  
Temperature Dependence ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Activation Enthalpy ◽  
Exponential Factor ◽  
Self Diffusion ◽  
Diffusion Studies ◽  
Exponential Factors ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTWe report self-diffusion studies of silicon between 855 and 1388°C in highly enriched epitaxial 28Si layers. Diffusion profiles of 30Si and 29Si are determined with high resolution secondary ion mass spectrometry (SIMS). The temperature dependence of the Si self-diffusion coefficients is accurately described with an activation enthalpy of 4.76 eV and a pre-exponential factor of 560 cm2s-1. The single activation enthalpy indicates that Si self-interstitials dominate self-diffusion over the whole temperature range investigated. Self- and interdiffusion in buried Al71GaAs/Al69GaAs/71GaAs isotope heterostructures with different Al composition is measured between 800 and 1160°C. Ga self-diffusion in AlGaAs and interdiffusion of Al and Ga at the AlGaAs/GaAs interface show that Ga diffusion decreases with increasing Al composition and that the interdiffusion coefficient depends linearly on Al concentration. Furthermore Al is found to diffuse more rapidly into GaAs than Ga diffuses in GaAs. The temperature dependence of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs is described by a single activation enthalpy in the range of 3.6±0.1 eV, but by different pre-exponential factors. Differences found for Ga and Al diffusion in GaAs and for Ga diffusion in AlGaAs with different Al concentrations are discussed.

First Study of Iron Self-Diffusion in Fe2O3 Single Crystals by SIMS

2005 ◽  
Vol 237-240 ◽  
pp. 277-281 ◽  
Author(s):  
Antônio Claret Soares Sabioni ◽  
Antônio Márcio J.M. Daniel ◽  
W.A.A. Macedo ◽  
M.D. Martins ◽  
Anne Marie Huntz ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stable Isotope ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Reliable Data ◽  
Oxygen Atmosphere ◽  
Self Diffusion ◽  
Secondary Ion

Iron bulk self-diffusion coefficients were measured in Fe2O3 single crystals using an original methodology based on the utilization of 57Fe stable isotope as iron tracer and depth profiling by secondary ion mass spectrometry (SIMS). The iron self-diffusion coefficients measured along c-axis direction, between 900 and 1100o C, in oxygen atmosphere, can be described by the following Arrhenius relationship: D(cm2/s)= 5.2x106 exp [-510 (kJ/mol)/RT], and are similar to reliable data available in the literature, obtained by means of radioactive techniques.

Oxygen Self-Diffusion in Silicon Dioxide: Effect of the Si/SiO2 Interface

2006 ◽  
Vol 258-260 ◽  
pp. 554-561 ◽  
Author(s):  
Masashi Uematsu ◽  
Marika Gunji ◽  
Kohei M. Itoh
Keyword(s):  
Mass Spectrometry ◽  
Silicon Dioxide ◽  
Oxygen Isotopes ◽  
Secondary Ion Mass Spectrometry ◽  
Oxidation Time ◽  
Diffusion Region ◽  
Sio2 Surface ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

The effect of the SiO2/Si interface on oxygen self-diffusion in SiO2 during thermal oxidation was investigated using oxygen isotopes. A Si18O2 layer was first grown in 18O2 and then the sample was reoxidized in 16O2 at 900 ~ 1100 °C. The O diffusion in SiO2 during the 16O2 oxidation was investigated by secondary ion mass spectrometry (SIMS) measurements. Near the SiO2/Si interface, a significant broadening of the 18O profile toward the newly grown Si16O2 was observed. This 18O diffusion became slower with oxidation time and hence with increasing distance between 18O diffusion region and the interface. This distance-dependent 18O self-diffusion was simulated taking into account the effect of SiO generated at the interface upon oxidation and diffusing into SiO2 to enhance O self-diffusion. The simulation fits the SIMS profiles and shows that the SiO diffusion is greatly retarded by the oxidation with O2 from the oxygen-containing atmosphere and that the O self-diffusion therefore becomes distance-dependent. In addition, near the SiO2 surface, 16O diffusion profiles develop with the 16O2 oxidation time from the surface into the initially grown Si18O2. The integrated surface 16O concentration increases with oxidation time and the SiO from the interface affects the O self-diffusion near the surface as well.

scholarly journals Transport and Electromechanical Properties of Ca3TaGa3Si2O14 Piezoelectric Crystals at Extreme Temperatures

MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 515-521
Author(s):  
Yuriy Suhak ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
Holger Fritze
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tone Burst ◽  
Total Conductivity ◽  
Transport Mechanisms ◽  
Electromechanical Properties ◽  
Self Diffusion ◽  
Oxygen Ion ◽  
Piezoelectric Strain ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTTransport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystais

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Nova ◽  
A. R. Von Neida ◽  
S. J. Pearton
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Electronic Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Gaas Wafer ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTIn order to gain a better understanding of hydrogen in GaAs crystals, a Zn doped p+ GaAs wafer has been implanted with 300 keV protons (H) to a fluence of 1E16/ain and portions of the wafer have been furnace annealed at temperatures up to 600°C. The implanted H and the dopant Zn atomr were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the H redistributes itself in the p+ GaAs(Zn) in much the same manner as it does in n+ GaAs(Si). Movement of the implanted H begins with annealing at 200°C and proceeds rapidly with higher temperatures. However, based on the SIMS profiles, the diffusion coefficient for the H diffusing into the undamaged p+ GaAs(Zn) crystal appears to be considerably higher than that of H into n+ GaAs(Si). Electronic properties of the inplanted and annealed p+ GaAs samples have also been examined and correlated with the SINE profiles.

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