Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

1997 ◽  
Vol 469 ◽  
Author(s):  
Masayuki Hiroi ◽  
Takeo Ikezawa ◽  
Masami Hane ◽  
Hiroshi Matsumoto
Keyword(s):  
Point Defect ◽  
Diffusion Model ◽  
Mass Spectroscopy ◽  
Beam Energy ◽  
Binding Energies ◽  
Primary Beam ◽  
Secondary Ion Mass Spectroscopy ◽  
Deactivation Process ◽  
Secondary Ion

ABSTRACTAn arsenic diffusion model was proposed with the emphasis on a new deactivation process which accounts for excess interstitial silicon generation. Appropriate parameter set for the binding energies of arsenic-point defect pairs were obtained for reproducing various arsenic activation levels and interaction with boron in the case of co-diffusion. Such parameters were extracted from the data of carefully performed secondary ion mass spectroscopy with lowering the primary beam energy.

Diffusion of Ion Implanted Ruthenium and Osmium IN GaAs and InP

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Kuttler ◽  
A. Knecht ◽  
D. Bimberg ◽  
H. Kräutle
Keyword(s):  
Structural Properties ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Diffusion Processes ◽  
Rutherford Backscattering ◽  
Uphill Diffusion ◽  
Secondary Ion Mass Spectroscopy ◽  
Depth Profiles ◽  
Annealing Procedure ◽  
Secondary Ion

ABSTRACTThe redistribution of the dopants Ru and Os implanted into GaAs and InP as well as the structural properties of the hosts are investigated in dependence of the annealing procedure. Results of Rutherford backscattering and secondary-ion-mass-spectroscopy experiments are presented. The RBS results of Os in GaAs annealed at 850°C indicate that an amount of about 1018 cm-3 Os is on substitutional sites. Two different diffusion processes are observed: an uphill diffusion in the amorphized region and a Fick-type diffusion in the tail of the depth profiles. The diffusion coefficients for Ru in GaAs at 850°C and Os in InP at 750°C are estimated to 4*10-14 cm2s-1 and 8*10-15 cm2s-1, respectively.

STUDY OF COPPER DIFFUSION INTO TANTALUM AND TANTALUM DIFFUSION INTO COPPER

2002 ◽  
Vol 16 (01n02) ◽  
pp. 100-107 ◽  
Author(s):  
S. W. LOH ◽  
D. H. ZHANG ◽  
C. Y. LI ◽  
R. LIU ◽  
A. T. S. WEE
Keyword(s):  
Thin Films ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Diffusion Profile ◽  
Thermal System ◽  
Plasma Samples ◽  
Secondary Ion Mass Spectroscopy ◽  
Copper Diffusion ◽  
Metal Plasma ◽  
Secondary Ion

We have carried out direct diffusion measurements of Cu into Ta and Ta into Cu. Thin films of 50nm thickness of Cu were grown onto a thick Ta layer of 1 μm by Ionized Metal Plasma. Samples were annealed in a rapid thermal system from temperatures ranging from 400°C to 800°C for periods of 60s and 180s. The diffusion profile was performed using Secondary ion mass spectroscopy. The Cu diffusion coefficients in Ta can be described by 3.0246 × 10-15 exp(-0.1747eV/kT) at 60s and 2.7532 × 10-15 exp(-0.1737eV/kT) at 180s. The Ta diffusion coefficients in Cu can be described by 2.7532 × 10-15 exp(-0.1773eV/kT) at 60s and 2.1271 × 10-15 exp(-0.1753eV/kT) at 180s. To assure reliability, the extent of both diffusions should be considered in device design and processing.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion
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