Diffusivity and Diffusion Mechanism of Oxygen in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S.-Tong Lee ◽  
D. Nichols
Keyword(s):  
Mass Spectrometry ◽  
Point Defect ◽  
Point Defects ◽  
Oxygen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Processing Conditions ◽  
Float Zone ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusivities of oxygen in Czochralski Si (CZ-Si) and float-zone Si (FZ-Si) have been measured by using secondary ion mass spectrometry. The diffusivity at 700–1160°C deduced from the outdiffused profiles of oxygen incorporated in CZ-Si shows little or no dependence on processing conditions and can be expressed as D = 0.14 exp(−2.53 eV/kT) cm2/s. Diffusivity at 700–1100°C of oxygen implanted in FZ-Si is insensitive to doses and follows D = 0.13 exp(−2.50 eV/kT) cm2/s, which agrees remarkably well with CZ-Si data. Since large variations in point-defect concentrations existed under the conditions studied, the excellent agreement among the diffusivities leads to the conclusion that point defects in Si have little effect on oxygen diffusion. This demonstrates that oxygen diffuses primarily via an interstitial mechanism in the temperature range studied.

The Role of Carbon and Point Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
U. Gösele
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Carbon Concentration ◽  
Diffusion Mechanism ◽  
Intrinsic Point Defect ◽  
Interstitial Carbon ◽  
Frame Work ◽  
Co Precipitation ◽  
And Diffusion

ABSTRACTAn overview of the behavior of intrinsic point defects in silicon and their interaction with carbon is given for temperatures above about 500° C. The diffusive mechanism of carbon in silicon, which involves silicon self-interstitials, is treated in some detail and compared with the diffusion mechanism of oxygen. The solubility of interstitial carbon is estimated. Co-precipitation of carbon and self-interstitials or oxygen are dealt with in terms of simple volume considerations. It is proposed that the contradicting results on the influence of intrinsic point defect supersaturations on oxygen nucleation and precipitation may possibly be explained in the frame-work of opposite effects depending on the carbon concentration. Finally the influence of carbon on the incorporation and diffusion of gold in silicon is discussed.

Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
Igor O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Enhanced Diffusion ◽  
Sic Wafer ◽  
Secondary Ion

ABSTRACTThe diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

Structure and Diffusion of Asymmetric Diblock Copolymers in Thin Films:  A Dynamic Secondary Ion Mass Spectrometry Study

1998 ◽  
Vol 31 (25) ◽  
pp. 8826-8830 ◽  
Author(s):  
Hideaki Yokoyama ◽  
Edward J. Kramer ◽  
Miriam H. Rafailovich ◽  
Jonathan Sokolov ◽  
Steven A. Schwarz
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Diblock Copolymers ◽  
Secondary Ion Mass Spectrometry ◽  
Mass Spectrometry Study ◽  
Ion Mass Spectrometry ◽  
And Diffusion ◽  
Secondary Ion

Li Diffusion in (110) Oriented LiNbO3 Single Crystals

2013 ◽  
Vol 333 ◽  
pp. 33-38 ◽  
Author(s):  
Johanna Rahn ◽  
Lars Dörrer ◽  
Benjamin Ruprecht ◽  
Paul Heitjans ◽  
Harald Schmidt
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Secondary Ion Mass Spectrometry ◽  
Activation Enthalpy ◽  
Ion Beam ◽  
Diffusion Mechanism ◽  
Three Dimensional ◽  
Arrhenius Law ◽  
Dimensional Diffusion ◽  
Secondary Ion

Li diffusion is investigated in Li2O-deficient, (110) oriented LiNbO3single crystals in the temperature range between 523 and 673 K by secondary ion mass spectrometry. A thin layer of ion-beam sputtered isotope enriched6LiNbO3was used as a tracer source, which allows one to study pure isotope interdiffusion. The diffusivities coincide with those of (001) oriented single crystals and follow the Arrhenius law with an activation enthalpy of 1.33 eV. The results prove the existence of a three-dimensional diffusion mechanism.

Hydrogen Gettering within Processed Oxygen-Implanted Silicon

2011 ◽  
Vol 276 ◽  
pp. 35-40
Author(s):  
Andrzej Misiuk ◽  
Adam Barcz ◽  
Jadwiga Bak-Misiuk ◽  
Alexander G. Ulyashin ◽  
Przemyslaw Romanowski
Keyword(s):  
Mass Spectrometry ◽  
Hydrostatic Pressure ◽  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Plasma ◽  
Sample Surface ◽  
Processing Conditions ◽  
Disturbed Areas ◽  
Hydrogen Accumulation ◽  
Buried Layers ◽  
Secondary Ion

Hydrogen gettering by implantation-disturbed buried layers in oxygen-implanted silicon (Si:O, prepared by O2+ implantation at energy 200 keV and doses 1014 cm-2 and 1017 cm-2) was investigated after annealing of Si:O at up to 1570 K, also under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO2-x clusters and/or precipitates were formed. To produce Si:O,H, Si:O samples were subsequently treated in RF hydrogen plasma. As determined by Secondary Ion Mass Spectrometry, hydrogen was accumulated at the sample surface and within implantation-disturbed areas. It was still present in Si:O,H (D=1017 cm–2) even after subsequent annealing at up to 873 K. Hydrogen accumulation within disturbed areas of Si:O as well as of SOI can be used for recognition of defects in such structures.

How SIMS microscopy can be used in medicine

1992 ◽  
Vol 50 (2) ◽  
pp. 1602-1603
Author(s):  
Philippe Fragu
Keyword(s):  
Mass Spectrometry ◽  
Biomedical Applications ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Elements ◽  
Biological Applications ◽  
The Past ◽  
Potential Source ◽  
Secondary Ion ◽  
Chemical Integrity ◽  
Scientific Endeavour

The identification, localization and quantification of intracellular chemical elements is an area of scientific endeavour which has not ceased to develop over the past 30 years. Secondary Ion Mass Spectrometry (SIMS) microscopy is widely used for elemental localization problems in geochemistry, metallurgy and electronics. Although the first commercial instruments were available in 1968, biological applications have been gradual as investigators have systematically examined the potential source of artefacts inherent in the method and sought to develop strategies for the analysis of soft biological material with a lateral resolution equivalent to that of the light microscope. In 1992, the prospects offered by this technique are even more encouraging as prototypes of new ion probes appear capable of achieving the ultimate goal, namely the quantitative analysis of micron and submicron regions. The purpose of this review is to underline the requirements for biomedical applications of SIMS microscopy.Sample preparation methodology should preserve both the structural and the chemical integrity of the tissue.

Imaging of Al-Li-Cu alloys with a Scanning Ion Microprobe

1990 ◽  
Vol 48 (2) ◽  
pp. 314-315
Author(s):  
K.K. Soni ◽  
D.B. Williams ◽  
J.M. Chabala ◽  
R. Levi-Setti ◽  
D.E. Newbury
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Equilibrium Phase ◽  
Icosahedral Symmetry ◽  
Ion Microprobe ◽  
X Ray ◽  
Cu Alloys ◽  
Two Phases ◽  
The University ◽  
Secondary Ion

In contrast to the inability of x-ray microanalysis to detect Li, secondary ion mass spectrometry (SIMS) generates a very strong Li+ signal. The latter’s potential was recently exploited by Williams et al. in the study of binary Al-Li alloys. The present study of Al-Li-Cu was done using the high resolution scanning ion microprobe (SIM) at the University of Chicago (UC). The UC SIM employs a 40 keV, ∼70 nm diameter Ga+ probe extracted from a liquid Ga source, which is scanned over areas smaller than 160×160 μm2 using a 512×512 raster. During this experiment, the sample was held at 2 × 10-8 torr.In the Al-Li-Cu system, two phases of major importance are T1 and T2, with nominal compositions of Al2LiCu and Al6Li3Cu respectively. In commercial alloys, T1 develops a plate-like structure with a thickness <∼2 nm and is therefore inaccessible to conventional microanalytical techniques. T2 is the equilibrium phase with apparent icosahedral symmetry and its presence is undesirable in industrial alloys.

Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

1990 ◽  
Vol 48 (2) ◽  
pp. 308-309
Author(s):  
Bruno Schueler ◽  
Robert W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Information ◽  
Time Of Flight ◽  
Biological Tissues ◽  
Polymer Surfaces ◽  
Tof Sims ◽  
Secondary Ions ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.

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