Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

2001 ◽  
Vol 669 ◽  
Author(s):  
Aihua Dan ◽  
Arthur F. W. Willoughby ◽  
Janet M. Bonar ◽  
Barry M. McGregor ◽  
Mark G. Dowsett ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Silicon Germanium ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Time ◽  
Injection Technique ◽  
Boron Diffusion ◽  
Rapid Thermal Anneal ◽  
Vacancy Defects ◽  
Defect Injection

ABSTRACTThe effect of point defect injection on the diffusion of antimony and boron in silicon and silicon-germanium alloys has been studied by comparison of inert with injection diffusions. In this work, Sb and B in Si were used as control wafers to investigate Sb and B diffusion behavior in Si0.9Ge0.1. The point defect injection technique was carried out by rapid thermal annealing (RTA) Sb and B in Si and Si0.9Ge0.1 samples with the various surface coatings in either oxygen or ammonia atmospheres to inject either interstitial or vacancy defects. The diffusion profiles for as-grown and RTA annealed samples were measured by Secondary Ion Mass Spectrometry (SIMS). Diffusivities for B in Si and Si0.9Ge0.1 were obtained using computer simulations of the measured boron profiles for their annealed samples. Sb diffusion in Si and Si0.9Ge0.1 was found enhanced by vacancy injection and retarded by interstitial injection. The enhanced B diffusion in Si and Si0.9Ge0.1 was found by interstitial injection. These results confirm that Sb diffusion in Si0.9Ge0.1 is primarily dominated by vacancy-mediated mechanism, while B diffuses in Si0.9Ge0.1 by an interstitially mediated mechanism. The effect of the RTA diffusion time on the B diffusion in Si and Si0.9Ge0.1 has also been investigated. The diffusivity versus diffusion time of B in Si and Si0.9Ge0.1 for inert and injection samples is presented. It was found that the shorter annealing time had the faster diffusion. This suggested that it caused by transient diffusion effect arising from point defects.

Furnace and Rta Injection of Point Defects into CVD-Grown B Doped Si and SiGe

2000 ◽  
Vol 610 ◽  
Author(s):  
Janet M. Bonar ◽  
Barry M. Mcgregor ◽  
Nick E. B. Cowern ◽  
Aihua Dan ◽  
Graham A. Cooke ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Enhancement Factor ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Vacancy Defects ◽  
Conventional Furnace ◽  
Interstitial Defects ◽  
Defect Injection ◽  
Sims Analysis

AbstractThe diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional furnace anneal is studied in this work. B-doped regions in SiGe and Si were grown by LPCVD, and point defects were injected by RTA or furnace annealing bare, Si3N4 or SiO2 + Si3N4 covered samples in an oxygen atmosphere. Self-interstitial defects will be injected into bare Si while vacancy defects will be injected into Si3N4 covered samples, and inert annealing will occur in SiO2 + Si3N4 covered samples. The annealed and asgrown profiles were determined using SIMS analysis, and the diffusivities extracted by direct comparison of the profiles. Both interstitials and vacancies were injected during furnace annealing of SiGe, as demonstrated by the respective enhancement and retardation of the B diffusion. Enhanced B diffusion in SiGe was observed even for 5 s RTA at 1000°C, with an enhancement factor of ∼2.5. The B in Si diffusivity enhancement for interstitial injection by RTA oxidation was found to be a factor of ∼3 compared to inert anneals, close to the factor for SiGe.

ANTIMONY DIFFUSION IN SILICON GEMANIUM ALLOYS UNDER POINT DEFECT INJECTION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4195-4198 ◽  
Author(s):  
AIHUA DAN ◽  
ARTHUR F. W. WILLOUGHBY ◽  
JANET M. BONAR ◽  
BARRY M. MCGREGOR ◽  
MARK G. DOWSETT ◽  
...  
Keyword(s):  
Point Defect ◽  
Computer Simulations ◽  
Point Defects ◽  
Silicon Germanium ◽  
Oxygen Atmosphere ◽  
Epitaxial Layers ◽  
Rapid Thermal Anneal ◽  
Strained Si ◽  
Defect Injection

Antimony diffusion in in-situ doped strained Si 0.9 Ge 0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890°C to 1000°C. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.

Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

2005 ◽  
Vol 237-240 ◽  
pp. 998-1003
Author(s):  
Mudith S.A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Peter Ashburn ◽  
Arthur F.W. Willoughby
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficients ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Coated Surfaces ◽  
Secondary Ion ◽  
Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

Effect of point defect injection on diffusion of boron in silicon and silicon–germanium in the presence of carbon

2005 ◽  
Vol 97 (11) ◽  
pp. 113531 ◽  
Author(s):  
M. S. A. Karunaratne ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
J. Zhang ◽  
P. Ashburn
Keyword(s):  
Point Defect ◽  
Silicon Germanium ◽  
Defect Injection

Injection of point defects by oxidation of AlGaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Danielle R. Chamberlin ◽  
Scott A. McHugo ◽  
Dariusz Burak ◽  
Deyon Burke ◽  
Tim Osentowski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Point Defect ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Published Data ◽  
Group Iii ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Order Of Magnitude ◽  
Pl Emission

AbstractInjection of point defects into GaAs/AlxGa1-xAs heterostructures by oxidation of AlxGa1-xAs is investigated. The blueshift of the PL emission from GaAs quantum wells is measured as a function of rapid thermal annealing conditions in as-grown and thermally oxidized samples. Contrary to published data for point defect injection by oxidation of GaAs, oxidation of AlxGa1-xAs appears to reduce the interdiffusion of the quantum wells. The PL peak shifts after annealing have been fit assuming Al diffusion in the quantum wells and solving the singleparticle Schrödinger equation. These fits show a reduction in group-III diffusivity of over an order of magnitude with an oxidized layer of AlxGa1-xAs on the surface.

scholarly journals First Principles Study on the Thermodynamic and Elastic Mechanical Stability of Mg2X (X = Si,Ge) Intermetallics with (anti) Vacancy Point Defects

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 234 ◽  
Author(s):  
Yuhong Zhao ◽  
Jinzhong Tian ◽  
Guoning Bai ◽  
Leting Zhang ◽  
Hua Hou
Keyword(s):  
Point Defect ◽  
Elastic Deformation ◽  
Point Defects ◽  
Density Functional ◽  
Lattice Site ◽  
Mechanical Stability ◽  
Cell Model ◽  
Mechanical Instability ◽  
Volume Deformation ◽  
Vacancy Defects

In this paper, based on the density functional theory, through thermodynamic and mechanical stability criteria, the crystal cell model of intermetallic compounds with vacancy and anti-site point defects is constructed and the lattice constant, formation heat, binding energy, elastic constant, and elastic modulus of Mg2X (X = Si, Ge) intermetallics with or without point defects are calculated. The results show that the difference in the atomic radius leads to the instability and distortion of crystal cells with point defects; Mg2X are easier to form vacancy defects than anti-site defects on the X (X = Si, Ge) lattice site, and form anti-site defects on the Mg lattice site. Generally, the point defect is more likely to appear at the Mg position than at the Si or Ge position. Among the four kinds of point defects, the anti-site defect x M g is the easiest to form. The structure of intermetallics without defects is more stable than that with defects, and the structure of the intermetallics with point defects at the Mg position is more stable than that at the Si/Ge position. The anti-site and vacancy defects will reduce the material’s resistance to volume deformation shear strain, and positive elastic deformation, and increase the mechanical instability of the elastic deformation of the material. Compared with the anti-site point defect, the void point defect can lead to the mechanical instability of the transverse deformation of the material and improve the plasticity of the material. The research in this paper is helpful for the analysis of the mechanical stability of the elastic deformation of Mg2X (X = Si, Ge) intermetallics under the service condition that it is easy to produce vacancy and anti-site defects.

Diffusivity and Diffusion Mechanism of Oxygen in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S.-Tong Lee ◽  
D. Nichols
Keyword(s):  
Mass Spectrometry ◽  
Point Defect ◽  
Point Defects ◽  
Oxygen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Processing Conditions ◽  
Float Zone ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusivities of oxygen in Czochralski Si (CZ-Si) and float-zone Si (FZ-Si) have been measured by using secondary ion mass spectrometry. The diffusivity at 700–1160°C deduced from the outdiffused profiles of oxygen incorporated in CZ-Si shows little or no dependence on processing conditions and can be expressed as D = 0.14 exp(−2.53 eV/kT) cm2/s. Diffusivity at 700–1100°C of oxygen implanted in FZ-Si is insensitive to doses and follows D = 0.13 exp(−2.50 eV/kT) cm2/s, which agrees remarkably well with CZ-Si data. Since large variations in point-defect concentrations existed under the conditions studied, the excellent agreement among the diffusivities leads to the conclusion that point defects in Si have little effect on oxygen diffusion. This demonstrates that oxygen diffuses primarily via an interstitial mechanism in the temperature range studied.

Point Defect Injection and Enhanced Sb Diffusion in Si During Co-Si and Ti-Si Reactions

1990 ◽  
Vol 209 ◽  
Author(s):  
J.W. Honeycutr ◽  
G.A. Rozgonyi
Keyword(s):  
Point Defect ◽  
Secondary Ion Mass Spectrometry ◽  
Profile Analysis ◽  
Film Formation ◽  
Excess Vacancy ◽  
Intrinsic Diffusion ◽  
Injection Process ◽  
Defect Injection ◽  
Secondary Ion ◽  
Vacancy Concentrations

ABSTRACTThe effects of Co and Ti silicide film formation on diffusion of buried Sb-doped layers in Si have been investigated. Sb profile analysis by secondary ion mass spectrometry shows that greatly enhanced, non-uniform Sb diffusion occurs during reactions of various thicknesses (30- 300 nm) of Co and Ti by rapid thermal annealing. A simple non-equilibrium intrinsic diffusion model is invoked to estimate time-averaged excess vacancy concentrations. Vacancy concentrations of about 107 times equilibrium values are shown to exist during CoSi2 formation by reaction of a 30 nm Co film at 700°C for 5 min in Ar.Diffusion enhancements at large distances from silicide stripe edges are observed by bevel and etch techniques. These effects tend to decrease with increasing annealing time, indicating that film stresses may play an important role in the interfacial point defect injection process.

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