Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
T. Y. Liu ◽  
P. M. Petroff ◽  
H. Kroemer ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
The Other ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Doping Effects ◽  
Multi Quantum Well

AbstractIn heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.

Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures

1994 ◽  
Vol 65 (17) ◽  
pp. 2168-2170 ◽  
Author(s):  
M. Godlewski ◽  
C. I. Harris ◽  
J. P. Bergman ◽  
B. Monemar ◽  
A. Waag
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Interband transitions dependent on indium concentration in Ga1−xInxAs/GaAs asymmetric triple quantum wells

2018 ◽  
Vol 32 (05) ◽  
pp. 1850052 ◽  
Author(s):  
B. O. Alaydin ◽  
E. Ozturk ◽  
S. Elagoz
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
Radiative Decay ◽  
Interband Transition ◽  
Energy Levels ◽  
Oscillator Strengths ◽  
Quantum Well Structures ◽  
Transition Energies ◽  
Decay Times

In this paper, the optical and electronic properties of asymmetric triple quantum well (ATQW) structures are studied depending on the indium concentrations while quantum well (QW) thicknesses and barrier widths are kept constant. Calculation of electronic properties are done within the framework of the effective mass approximation. The indium concentrations in left quantum well (LQW) and right quantum well (RQW) are varied in order to see the change of energy levels. Then, interband transition energies, wavelengths, oscillator strengths and radiative decay times are determined depending on barrier height. The scope of this study, for the first time in the literature, covers converged interband transition energies for the asymmetric quantum well structures.

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells

1995 ◽  
Vol 396 ◽  
Author(s):  
H.H. Tan ◽  
J.S. Williams ◽  
C. Jagadish ◽  
P.T. Burke ◽  
M. Gal
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Ion Irradiation ◽  
Large Energy ◽  
Good Recovery ◽  
Quantum Well Structures ◽  
Delicate Balance ◽  
Higher Doses ◽  
Low Temperature Photoluminescence

AbstractA comparison of ion irradiation-induced intermixing in GaAs-Al0.54Gao46As quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Very large energy shifts are observed together with good recovery of the photoluminescence intensities after annealing in samples irradiated with protons. No saturation in the energy shifts is observed in samples irradiated even up to a dose of 4.3 x 1016 cm-2. Similar large shifts with low absorption are also observed in O and As implanted samples but at a significantly lower ion dose. However, both the heavier ions show a saturation effect in the degree of intermixng at higher doses. The degree of intermixing is believed to be a delicate balance among multiple competing processes that occurs across the interface.

High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Crystal Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Progressive Deterioration

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...

Local Atomic Interdiffusion in CdTe/HgCdTe Multilayered Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
Y. Kim ◽  
A. Ourmazd ◽  
R. D. Feldman ◽  
J. A. Rentschler ◽  
D. W. Taylor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantitative Composition ◽  
Lattice Imaging ◽  
Multilayered Structures ◽  
Quantum Well Structures ◽  
Composition Profiles ◽  
Digital Pattern ◽  
The Stability ◽  
Multi Quantum Well

ABSTRACTWe combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way we obtain quantitative composition profiles for “as grown” samples, and investigate their development as a function of annealing temperature. Our results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. Our approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed.

scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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