Probing interface roughness of the GaAs/Al0.3Ga0.7As multi-quantum-well structures using low-temperature photoluminescence spectra

2020 ◽  
Author(s):  
T. Maitra ◽  
S. Mukherjee ◽  
A. Pradhan ◽  
S. Mukherjee ◽  
A. Nayak ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Interface Roughness ◽  
Photoluminescence Spectra ◽  
Quantum Well Structures ◽  
Multi Quantum Well ◽  
Low Temperature Photoluminescence

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures

1994 ◽  
Vol 65 (17) ◽  
pp. 2168-2170 ◽  
Author(s):  
M. Godlewski ◽  
C. I. Harris ◽  
J. P. Bergman ◽  
B. Monemar ◽  
A. Waag
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells

1995 ◽  
Vol 396 ◽  
Author(s):  
H.H. Tan ◽  
J.S. Williams ◽  
C. Jagadish ◽  
P.T. Burke ◽  
M. Gal
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Ion Irradiation ◽  
Large Energy ◽  
Good Recovery ◽  
Quantum Well Structures ◽  
Delicate Balance ◽  
Higher Doses ◽  
Low Temperature Photoluminescence

AbstractA comparison of ion irradiation-induced intermixing in GaAs-Al0.54Gao46As quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Very large energy shifts are observed together with good recovery of the photoluminescence intensities after annealing in samples irradiated with protons. No saturation in the energy shifts is observed in samples irradiated even up to a dose of 4.3 x 1016 cm-2. Similar large shifts with low absorption are also observed in O and As implanted samples but at a significantly lower ion dose. However, both the heavier ions show a saturation effect in the degree of intermixng at higher doses. The degree of intermixing is believed to be a delicate balance among multiple competing processes that occurs across the interface.

Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
T. Y. Liu ◽  
P. M. Petroff ◽  
H. Kroemer ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
The Other ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Doping Effects ◽  
Multi Quantum Well

AbstractIn heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.

scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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