Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures

1994 ◽  
Vol 65 (17) ◽  
pp. 2168-2170 ◽  
Author(s):  
M. Godlewski ◽  
C. I. Harris ◽  
J. P. Bergman ◽  
B. Monemar ◽  
A. Waag
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
T. Y. Liu ◽  
P. M. Petroff ◽  
H. Kroemer ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
The Other ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Doping Effects ◽  
Multi Quantum Well

AbstractIn heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.

scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Dispersion of photoluminescence peak positions in asymmetric InAs QD multi quantum well structures

2011 ◽  
Vol 8 (4) ◽  
pp. 1388-1390 ◽  
Author(s):  
J. L. Casas Espínola ◽  
T. V. Torchynska ◽  
G. Polupan ◽  
M. Ojeda Martínez
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well ◽  
Photoluminescence Peak

1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates

2017 ◽  
Vol 111 (3) ◽  
pp. 032105 ◽  
Author(s):  
Ludovico Megalini ◽  
Bastien Bonef ◽  
Brian C. Cabinian ◽  
Hongwei Zhao ◽  
Aidan Taylor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Soi Substrates ◽  
Multi Quantum Well
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