Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells

1995 ◽  
Vol 396 ◽  
Author(s):  
H.H. Tan ◽  
J.S. Williams ◽  
C. Jagadish ◽  
P.T. Burke ◽  
M. Gal
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Ion Irradiation ◽  
Large Energy ◽  
Good Recovery ◽  
Quantum Well Structures ◽  
Delicate Balance ◽  
Higher Doses ◽  
Low Temperature Photoluminescence

AbstractA comparison of ion irradiation-induced intermixing in GaAs-Al0.54Gao46As quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Very large energy shifts are observed together with good recovery of the photoluminescence intensities after annealing in samples irradiated with protons. No saturation in the energy shifts is observed in samples irradiated even up to a dose of 4.3 x 1016 cm-2. Similar large shifts with low absorption are also observed in O and As implanted samples but at a significantly lower ion dose. However, both the heavier ions show a saturation effect in the degree of intermixng at higher doses. The degree of intermixing is believed to be a delicate balance among multiple competing processes that occurs across the interface.

High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Crystal Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Progressive Deterioration

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...

Quantum Well Intermixing for Optoelectronic Applications

1997 ◽  
Vol 484 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
S. Yuan ◽  
M. Gal
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Anodic Oxide ◽  
Threshold Current ◽  
Quantum Well Intermixing ◽  
Quantum Well Structures ◽  
Proton Implantation ◽  
High Doses ◽  
Proton Dose ◽  
Low Temperature Photoluminescence

AbstractIon implantation induced intermixing of GaAs-AlGaAs quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Large energy shifts are observed in all the cases, though recovery of photoluminescence intensities in proton case is more significant than others. Energy shifts are linear with proton dose and no saturation was observed even up to a dose of ∼ 5 × 1016 cm−2. Saturation in energy shifts are seen for both As and 0 ions at high doses. Energy shifts are also found to be dependent on Al composition of the barriers. Wavelength shifted quantum well lasers are fabricated with energy shifts of about 5 nm with no changes in threshold current using proton implantation. Anodic oxide induced intermixing of GaAs-AlGaAs quantum wells is demonstrated.

Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
T. Y. Liu ◽  
P. M. Petroff ◽  
H. Kroemer ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
The Other ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Doping Effects ◽  
Multi Quantum Well

AbstractIn heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.

scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

2014 ◽  
Vol 1736 ◽  
Author(s):  
D.J. As ◽  
R. Kemper ◽  
C. Mietze ◽  
T. Wecker ◽  
J.K.N. Lindner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Quantum Wells ◽  
Emission Intensity ◽  
Optical Emission ◽  
Quantum Well Structures ◽  
Spatially Resolved ◽  
Scanning Transmission ◽  
Cubic Gan

ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.

(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol MA2020-01 (16) ◽  
pp. 1073-1073
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures
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