Local Atomic Interdiffusion in CdTe/HgCdTe Multilayered Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
Y. Kim ◽  
A. Ourmazd ◽  
R. D. Feldman ◽  
J. A. Rentschler ◽  
D. W. Taylor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantitative Composition ◽  
Lattice Imaging ◽  
Multilayered Structures ◽  
Quantum Well Structures ◽  
Composition Profiles ◽  
Digital Pattern ◽  
The Stability ◽  
Multi Quantum Well

ABSTRACTWe combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way we obtain quantitative composition profiles for “as grown” samples, and investigate their development as a function of annealing temperature. Our results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. Our approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed.

Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects

1989 ◽  
Vol 145 ◽  
Author(s):  
T. Y. Liu ◽  
P. M. Petroff ◽  
H. Kroemer ◽  
A. C. Gossard
Keyword(s):  
Low Temperature ◽  
Dislocation Density ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Properties ◽  
The Other ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Doping Effects ◽  
Multi Quantum Well

AbstractIn heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Dispersion of photoluminescence peak positions in asymmetric InAs QD multi quantum well structures

2011 ◽  
Vol 8 (4) ◽  
pp. 1388-1390 ◽  
Author(s):  
J. L. Casas Espínola ◽  
T. V. Torchynska ◽  
G. Polupan ◽  
M. Ojeda Martínez
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well ◽  
Photoluminescence Peak
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