scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol MA2020-01 (16) ◽  
pp. 1073-1073
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures

1994 ◽  
Vol 65 (17) ◽  
pp. 2168-2170 ◽  
Author(s):  
M. Godlewski ◽  
C. I. Harris ◽  
J. P. Bergman ◽  
B. Monemar ◽  
A. Waag
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

1988 ◽  
Vol 126 ◽  
Author(s):  
P. M. Petroff ◽  
Xueyu Qian ◽  
Per Olof Holtz ◽  
R. J. Simes ◽  
J. H. English ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Damage Distribution ◽  
Quantum Well Structures ◽  
Ion Beam Implantation ◽  
Dose Effects

ABSTRACTThe effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

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