Superradiance of excitons in multi-quantum-well structures based on InAs-GaSb coupled quantum wells

Author(s):  
Boris Laikhtman
2013 ◽  
Vol 773 ◽  
pp. 622-627
Author(s):  
Ying Ning Qiu ◽  
Wei Sheng Lu ◽  
Stephane Calvez

The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.


1988 ◽  
Vol 144 ◽  
Author(s):  
Y. Kim ◽  
A. Ourmazd ◽  
R. D. Feldman ◽  
J. A. Rentschler ◽  
D. W. Taylor ◽  
...  

ABSTRACTWe combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way we obtain quantitative composition profiles for “as grown” samples, and investigate their development as a function of annealing temperature. Our results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. Our approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed.


1989 ◽  
Vol 145 ◽  
Author(s):  
T. Y. Liu ◽  
P. M. Petroff ◽  
H. Kroemer ◽  
A. C. Gossard

AbstractIn heavily dislocated GaAs (dislocation density of 108cm-2), the low-temperature cathodo- luminescence efficiency of quantum wells and superlattices is dramatically higher than that of a bulk-like layer. Furthermore, the luminescence efficiency can be further improved by doping the barriers of the GaAs/(Al,Ga)As multi-quantum well structures with beryllium (Be). Two quite different possible models for this observation are discussed: One assumes that the effect is due to the expulsion of dislocation kinks from the wells, the other that it is due to the effect of well width fluctuations.


2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang

2011 ◽  
Vol 8 (4) ◽  
pp. 1388-1390 ◽  
Author(s):  
J. L. Casas Espínola ◽  
T. V. Torchynska ◽  
G. Polupan ◽  
M. Ojeda Martínez

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