Transient Thermal Analysis for Rapid Thermal Processing of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
F. K. Yang ◽  
S. J. Pien ◽  
R. Kwor
Keyword(s):  
Thermal Analysis ◽  
Silicon Dioxide ◽  
Oxide Layer ◽  
Thermal Processing ◽  
Rapid Heating ◽  
Rapid Thermal Processing ◽  
Doping Effect ◽  
Heating Process ◽  
Light Sources ◽  
Transient Thermal

ABSTRACTA thermal analysis is performed to simulate the rapid heating process for ion implanted GaAs with consideration of the doping effect. The results are for cases with various concentrations and thicknesses of doping layer. Also studied are the heating processes for silicon dioxide capped GaAs. The effects of the thickness of the oxide layer are discussed. The magnitude of the temperature differences across the wafer is addressed. The present analysis considers xenon-arc lamps and tungsten-halogen lamps as the light sources.

Optimum Heating Control Method to Keep a Given Temperature Rising Speed of a Plate During Rapid Thermal Processing

2008 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Sadanori Toda
Keyword(s):  
Thermal Processing ◽  
Thermal Model ◽  
Control Method ◽  
Rapid Thermal Processing ◽  
Good Method ◽  
Correlation Equation ◽  
Measuring Error ◽  
Heating Process ◽  
Time Step ◽  
Optimum Heating

In rapid thermal processing of semiconductor wafers, it is very important to keep a given temperature rising speed of the wafer during the heating process. We calculated the effect of various heating control methods on the error of the temperature rising speed of the wafer. We calculated the PID control, the control method by correcting with temperature rising speed, the control using a thermal model, the control using a prepared correlation equation, and the combined methods. We found that the combined method with a thermal model and rising speed is a good method to decrease the error of the temperature rising speed. The minimum error of the temperature rising speed at 700°C is less than 0.1°C/s during the temperature rising process of 100°C/s and the monitoring time step of 0.05 s. We calculated the effects of control-delay-time and measuring error of the monitoring temperature on the error of the temperature rising speed.

Rapid Thermal Processing of III-Nitrides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Hong ◽  
J. W. Lee ◽  
C. B. Vartuli ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
...  
Keyword(s):  
High Temperature ◽  
Partial Pressure ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
The Other ◽  
High Temperature Annealing ◽  
Surface Protection ◽  
Transient Thermal ◽  
Graphite Susceptor

ABSTRACTTransient thermal processing is employed for implant activation, contact alloying, implant isolation and dehydrogenation during III-nitride device fabrication. We have compared use of InN, AlN and GaN powder as methods for providing a N2 overpressure within a graphite susceptor for high temperature annealing of GaN, InN, A1N and InAlN. The AlN powder provides adequate surface protection to temperatures of ∼1100°C for AlN, > 1050°C for GaN, ∼600°C for InN and ∼800°C for the ternary alloy. While the InN powder provides a higher N2 partial pressure than AlN powder, at temperatures above ∼750°C the evaporation of In is sufficiently high to produce condensation of In droplets on the surfaces of the annealed samples. GaN powder achieved better surface protection than the other two cases.

Pattern Related Non-Uniformities During Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
R. Bremensdorfer ◽  
S. Marcus ◽  
Z. Nenyei
Keyword(s):  
Thermal Processing ◽  
Rapid Heating ◽  
Rapid Thermal Processing ◽  
Emission Spectra ◽  
Wafer Surface ◽  
Interference Effects ◽  
Indirect Control ◽  
Thermal Oxide ◽  
Substrate Temperatures ◽  
Related Process

AbstractState of the art rapid thermal processing is able to produce a lateral thermal homogeneity which is within the inherent resolution limits of current meterology. For the most commonly used direct or indirect control methods such as multiple thermocouple measurements, rapid thermal oxidation (RTO), or rapid thermal annealing (RTA) of plain semiconductor wafers this limit is ± 2°C. As homogeneity requirements approach those limits, pattern induced non-uniformities are getting more important.In order to achieve rapid heating and high substrate temperatures in RTP, heater and substrate are not in equilibrium and their emission spectra differ considerably. Under such circumstances laterally varying optical characteristics on the substrate itself imply thermal non-uniformities. The influence of patterns on a silicon wafer surface on the temperature uniformity is studied. Passive patterns showing interference effects were formed out of thermal oxide and Si3N4. RTO and RTA, as well as embedded thermocouples were used for temperature measurement. The data presented show that major non-uniformities due to interference effects can be reduced by restricting the energy transfer through the patterned side of the wafer. It is shown that independent top and bottom heater bank control and controlled thermal kinetics are suitable methods to reduce the pattern related process non-uniformities.

Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Nulman ◽  
J. P. Krusius ◽  
P. Renteln
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Material Characterization ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Pure Oxygen ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

Rapid Thermal Oxidation of Polysilicon and Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
Jaim Nulman
Keyword(s):  
Silicon Dioxide ◽  
Density Of States ◽  
Growth Kinetics ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Pure Oxygen ◽  
Process Time ◽  
Crystal Silicon ◽  
Kinetics Of

AbstractGrowth kinetics of silicon dioxide films grown by rapid thermal processing on polysilicon and single crystal silicon films is described. Oxides were grown in pure oxygen and oxygen with up to 4% HCI. For process time in the 1 to 120 s, oxide films thicknesses in the 2 to 36 nm are obtained with a uniformity of ±2% across 100 mm wafers. These oxides show an interface density of states of 5×109 eV−1cm−2 after a 30 s post-oxidation anneal in nitrogen ambient at 1050 C.

Analysis of the Effect of Heating Control Conditions on Temperature Distribution in a Wafer During Rapid Thermal Processing With Lamp Heaters

2001 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Tadashi Suzuki ◽  
Shigenao Maruyama ◽  
Yuhei Takeuchi
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Radiative Heat ◽  
Rapid Thermal Processing ◽  
Three Dimensional ◽  
Heating Process ◽  
Computation Technique ◽  
Shielding Ring ◽  
Optimum Heating

Abstract To unify temperature distribution in a wafer during rapid thermal processing, we calculated the effect of the heating control conditions on temperature distributions in the wafer during heat-up and at steady state by using a program for analyzing three-dimensional radiative heat transfer. We calculated optimum monitoring positions on the wafer in order to minimize the temperature distribution in the wafer. The effects of rotating the wafer, the spacing between the wafer and the shielding ring, the number of monitoring positions, and the initial non-uniform temperature distribution were also calculated. The minimum steady temperature distribution in the wafer at the optimum condition was calculated as ±0.1 K during 100 K/s heat-up and ±0.02 K at 1273 K steady state. We also developed a rapid parallel-computation technique to find the optimum heating control conditions for the whole heating process.

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