Real time investigation of nucleation and growth of silicon on silicon dioxide using silane and disilane in a rapid thermal processing system

1996 ◽  
Vol 14 (2) ◽  
pp. 744 ◽  
Author(s):  
Y. Z. Hu
Keyword(s):  
Silicon Dioxide ◽  
Real Time ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Nucleation And Growth

Epitaxial Silicon Layers Made by Reduced Pressure/Temperature CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
J.L. Regolini ◽  
D. Bensahel ◽  
J. Mercier ◽  
C. D'Anterroches ◽  
A. Perio
Keyword(s):  
Thermal Processing ◽  
Atmospheric Pressure ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Epitaxial Silicon ◽  
Reduced Pressure ◽  
Selective Epitaxial Growth ◽  
Main Decomposition ◽  
Rate Limiting ◽  
Reactive Gas

ABSTRACTIn a rapid thermal processing system working at a total pressure of a few Torr, we have obtained selective epitaxial growth of silicon at temperatures as low as 650°C. When using SiH2Cl2 (DCS) as the reactive gas, no addition of HCl is needed. Nevertheless, using SiH4 below 950°C a small amount of HCl should be added.Some kinetic aspects of the two systems, DCS/HCI/H2 and SiH4/HCl/H2, are presented and discussed. For the DCS system, we show that the rate-limiting reactions are slightly different from those commonly accepted in the literature, where the results are from systems working at atmospheric pressure or in the 20-100 Torr range.Our model is based on the main decomposition of DCS, SiH2Cl→SiHCl + HCl, instead of the widely accepted reaction SiH2Cl2→SiCl2 + H2. This is the main reason why no extra HCl is required in the DCS/H2 system to obtain full selectivity from above 1000°C down to 650°C.

The Effect of Lamps Radius on Thermal Stresses for Rapid Thermal Processing System

2003 ◽  
Vol 125 (3) ◽  
pp. 504-511 ◽  
Author(s):  
Ching-Kong Chao ◽  
Shih-Yu Hung ◽  
Cheng-Ching Yu
Keyword(s):  
Thermal Processing ◽  
Thermal Stresses ◽  
Maximum Shear Stress ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Practical Consideration ◽  
Fully Implicit ◽  
Control Scheme ◽  
Potential Applications ◽  
Dopant Redistribution

The concept of rapid thermal processing has many potential applications in microelectronics manufacturing, but the details of chamber design remains an active area of research. In this work the influence of lamps radius on the thermal stresses in a wafer during the cooling process is studied in detail. Since the equations governing the present thermal-elastic system are coupled in nature, the solution for the temperature and stresses must proceed simultaneously by using a fully implicit finite difference method. After the thermal stresses are obtained, the optimum lamps radii for various heights of the chamber under the constant power ramp-down control scheme are determined based on the maximum shear stress failure criterion. The shortest cooling time that can significantly reduce the thermal budget and dopant redistribution is also predicted by applying the maximum stress control scheme. The result obtained is useful in the design of a reliable rapid thermal processor based on a more practical consideration, thermal stress.

Review of rapid thermal processing: system design and applications

1992 ◽  
Author(s):  
Xiao-Li Xu ◽  
Jim J. Wortman ◽  
Mehmet C. Ozturk ◽  
Furman Y. Sorrell
Keyword(s):  
System Design ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System

Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

1989 ◽  
Vol 146 ◽  
Author(s):  
Fred Ruddell ◽  
Colin Parkes ◽  
B Mervyn Armstrong ◽  
Harold S Gamble
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Bipolar Transistors ◽  
Native Oxide ◽  
Plasma Oxidation ◽  
Oxide Removal ◽  
Polysilicon Emitter ◽  
Reaction Processing

ABSTRACTThis paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation and silicon deposition. Polysilicon layers produced by the system are incorporated into N-P-N polysilicon emitter bipolar transistors. These devices fabricated using a sequential in-situ plasma clean-polysilicon deposition schedule exhibited uniform gains limited to that of long single crystal emitters. Devices with either plasma grown or native oxide layers below the polysilicon exhibited much higher gains. The suitability of the system for sequential and limited reaction processing has been established.

Oxide Growth Using the Water-Wall Arc Lamp

1985 ◽  
Vol 52 ◽  
Author(s):  
Jeffrey C. Gelpey ◽  
Paul O. Stump ◽  
Ronald A. Capodilupo
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Processing System ◽  
Measurement Tool ◽  
Oxide Growth ◽  
Water Wall ◽  
Different Temperatures ◽  
Indirect Technique ◽  
Direct Feedback

ABSTRACTThe uses of Rapid Thermal Annealing or Rapid Thermal Processing (RTP) have been expanding beyond the original post implant annealing. RTP has been used to reflow low temperature oxides (PSG or BPSG), anneal silicides and to sinter contacts. One application of RTP which is beginning to receive attention is the growth of oxides or nitrides of silicon.This paper will examine the use of a commercial rapid thermal processing system based on a very high power water-wall DC arc lamp to grow oxides on silicon wafers. The work includes a study of the growth rates of oxides at different temperatures. Direct feedback control of wafer temperature and high ramp-up and cool-down rates are used to minimize the effects of temperature errors or “tails” in the temperature/time profiles. Ellipsometry is used as the primary measurement tool to characterize the oxide films.In addition to using a pure, dry oxygen atmosphere, several oxygen-argon mixtures are used. The effects of atmosphere on the growth rate of the oxide film are reported.In order to become a practical application of RTP, oxide growth must be accomplished uniformly and reproducibly. These characteristics are machine-dependent. The uniformity of films grown in this system are discussed. The growth of oxide films and the uniformity measurements are used as an indirect technique to characterize the uniformity of the system. The reproducibility of film thickness is also examined.

Transient Thermal Analysis for Rapid Thermal Processing of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
F. K. Yang ◽  
S. J. Pien ◽  
R. Kwor
Keyword(s):  
Thermal Analysis ◽  
Silicon Dioxide ◽  
Oxide Layer ◽  
Thermal Processing ◽  
Rapid Heating ◽  
Rapid Thermal Processing ◽  
Doping Effect ◽  
Heating Process ◽  
Light Sources ◽  
Transient Thermal

ABSTRACTA thermal analysis is performed to simulate the rapid heating process for ion implanted GaAs with consideration of the doping effect. The results are for cases with various concentrations and thicknesses of doping layer. Also studied are the heating processes for silicon dioxide capped GaAs. The effects of the thickness of the oxide layer are discussed. The magnitude of the temperature differences across the wafer is addressed. The present analysis considers xenon-arc lamps and tungsten-halogen lamps as the light sources.

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