Rapid thermal processing of silicon dioxide films in metal–oxide semiconductor capacitors: High-temperature SiO2 decomposition at the SiO2–Si interfaces in inert ambient

1989 ◽  
Vol 7 (2) ◽  
pp. 141 ◽  
Author(s):  
Joseph Z. Xie
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Silicon Dioxide ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Dioxide Films

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling
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