A new low thermal budget approach to interface nitridation for ultra-thin silicon dioxide gate dielectrics by combined plasma-assisted and rapid thermal processing

1998 ◽  
Author(s):  
H. Niimi ◽  
H. Y. Yang ◽  
G. Lucovsky
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Thermal Budget ◽  
Thin Silicon ◽  
Low Thermal Budget

Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Nulman ◽  
J. P. Krusius ◽  
P. Renteln
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Material Characterization ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Pure Oxygen ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

Low thermal budget in situ cleaning and passivation for silicon epitaxy in a multichamber rapid thermal processing cluster tool

1994 ◽  
Vol 21 (2) ◽  
pp. 137-141 ◽  
Author(s):  
Mahesh K. Sanganeria ◽  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
C.Archie Lee ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Budget ◽  
Silicon Epitaxy ◽  
Low Thermal Budget ◽  
Cluster Tool

Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO2 Structures by A 900°C 30 Second Rapid Thermal Anneal

1997 ◽  
Vol 470 ◽  
Author(s):  
G. Lucovsky ◽  
B. Hinds
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Rapid Thermal Anneal ◽  
Thermal Budget ◽  
Kinetic Effects ◽  
C 30 ◽  
Thin Gate Oxide ◽  
Low Thermal Budget

ABSTRACTDevice quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.

Beyond Thermal Budget: Using D · t In Kinetic Optimization Of RTP

1998 ◽  
Vol 525 ◽  
Author(s):  
R. Ditchfield ◽  
E. G. Seebauer
Keyword(s):  
Thermal Processing ◽  
Program Design ◽  
Rapid Thermal Processing ◽  
Dopant Diffusion ◽  
Thermal Budget ◽  
Microelectronic Fabrication ◽  
Kinetic Effects ◽  
Rigorous Method

ABSTRACTRapid thermal processing (RTP) has found continually increasing use for oxidation, silicidation, CVD, and other steps in microelectronic fabrication. Kinetic effects in rapid thermal processing (RTP) are often assessed using the concept of thermal budget, with the idea that low thermal budgets should minimize dopant diffusion and interface degradation. Some definitions of budget employ the product of temperature and time (T-t). In previous work, we have shown that this definition for budget often leads to qualitatively incorrect conclusions regarding heating program design. However, other definitions of budget employ the product of diffusivity and time (D-t), where the diffusivity describes unwanted diffusion or interface degradation. Here we show that minimization of D-t by itself is insufficient to kinetically optimize a heating program; account must be taken of the relative rates of the desired and undesired phenomena. We present a straightforward but rigorous method for doing so.

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