Formation of High Quality GaAs/Si Hetero-Structure by Solid Phase Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
M. Miyao ◽  
T. Shimada ◽  
A. Nishid ◽  
T. Inada ◽  
M. Tamura ◽  
...  
Keyword(s):  
Stress Field ◽  
Intensity Ratio ◽  
Solid Phase ◽  
High Density ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
High Quality ◽  
Hetero Structure

ABSTRACTImprovements of crystal quality in GaAs/Si heterostructure by solid phase epitaxy (SPE) are described. RBS and TEM measurements indicate that high density defects are located near the GaAs/Si interface after “2-step MBE”. Utilization of post SPE process (amorphization plus regrowth) significantly improve crystal qujali ty at the GaAs/Si interface, although a small stress field is introduced. In addition a new relation between photoluminecence intensity ratio and stress field is established. This provides a useful too] for measuring small stresses remaining in the GaAs/Si hetero-structure.

Ge epilayer of high quality on a Si substrate by solid‐phase epitaxy

1993 ◽  
Vol 63 (10) ◽  
pp. 1405-1407 ◽  
Author(s):  
W. S. Liu ◽  
J. S. Chen ◽  
D. Y. C. Lie ◽  
M.‐A. Nicolet
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality

Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

1989 ◽  
Vol 160 ◽  
Author(s):  
B.J. Robinson ◽  
B.T. Chilton ◽  
P. Ferret ◽  
D.A. Thompson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
Strained Layers ◽  
Transmission Electron ◽  
Layer Structures

AbstractSingle strained layer structures of up to 30 nm of Si1-xGex. on (100) Si and capped with 30-36 nm of Si have been amorphized by implantation with 120 keV As . The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.

High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
P.K. Vasudev ◽  
A.E. Schmitz ◽  
G.L. Olson
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Impurity Effects ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Time Resolved ◽  
Boron Doped ◽  
Epitaxial Regrowth ◽  
Doping Profiles

ABSTRACTWe report on a systematic study of the doping profiles resulting from rapid thermal annealing of boron and BF2+-implanted silicon samples that were preamorphized by Si+ implantation. A two-step process consisting of an initial solid phase epitaxial regrowth followed by a brief (~5 sec) high temperature (1050ଌ) anneal produces extremely shallow (<1500Å) junctions with low defect concentrations. The quality of the epitaxial regrowth is very sensitive to implant conditions and impurity effects as deduced from time-resolved reflectivity measurements. Using the best conditions for implantation and solid phase crystallization, we have obtained boron-doped regions with sheet resistivities of 40 Ω/ and BF2-doped regions of resistivity 60 Ω/.

High Dose Ion Implantation for the Synthesis of Si1−xGex Alloys

1990 ◽  
Vol 201 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Peak Concentration ◽  
Strain Energy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Stacking Faults ◽  
High Density ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Theoretical Predictions

AbstractHigh dose ion implantation followed by solid phase epitaxy has been investigated for use in the synthesis of defect-free graded alloys of Si1−xGex. Two implanted alloy systems were studied: (i) 200 keV 74Ge into <001> Si to form Si-rich alloys and (ii) 150 keV 29Si into <001> Ge to form Ge-rich alloys. After regrowth by solid phase epitaxy the Ge-rich alloys are strained in tension while the Si-rich alloys are in compression and, as a result, strain relaxation is anticipated above a critical dose. We report that solid phase epitaxy at 550°C following implantation of Si into <001> Ge at an energy of 150 keV allowed the defect-free regrowth of alloys with peak concentrations of 11 ± 2 at. % Si (fluence of 7.7 × l016/cm2). Ge was implanted at 200 keV into <001> Si to a peak concentration of 7 at. % (fluence of 3.6 × l016/cm2) and was regrown without the introduction of defects whereas samples implanted to a peak concentration of 13 at. % (fluence of 5.3 × l016/cm2) contained a high density of stacking faults. These experimental observations are compared to theoretical predictions that are based on the strain energy approach.

Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

2010 ◽  
Vol 1245 ◽  
Author(s):  
Agata Sakic ◽  
Yann Civale ◽  
Lis K. Nanver ◽  
Cleber Biasotto ◽  
Vladimir Jovanovic
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Crystal Orientation ◽  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality ◽  
Lateral Overgrowth

AbstractSilicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100) Si substrate and have the ability to merge seamlessly over the oxide.

Optical and electrical characterization of high quality β-FeSi2 thin films grown by solid phase epitaxy

1996 ◽  
Vol 102 ◽  
pp. 178-183 ◽  
Author(s):  
D.H. Tassis ◽  
C.L. Mitsas ◽  
T.T. Zorba ◽  
M. Angelakeris ◽  
C.A. Dimitriadis ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Electrical Characterization ◽  
Solid Phase Epitaxy ◽  
High Quality

Recrystallization of Si-, As- And BF2-Implanted, Bonded SOI

1997 ◽  
Vol 481 ◽  
Author(s):  
M. Tamura ◽  
M. Horiuchi
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Solid Phase ◽  
Growth Front ◽  
High Density ◽  
The Other ◽  
Crystal Quality ◽  
Cross Sectional ◽  
Facet Formation ◽  
Mask Edge

ABSTRACTConventional and high-resolution cross-sectional TEM observations have been carried out on Si-, As- and BF2-implanted, bonded 100-nm-thick (001) SOI layers having polycrystalline Si (poly-Si) masks followed by annealing at 600°C. Amorphized SOI layers by these ion implantations are recrystallized through lateral solid-phase seeding epitaxy (L-SPE) by single crystal SOI under the poly-Si mask as a seed. The recrystallization of these SOI layers is completed in the order of BF2-, Si- and As-implanted layers by <110>-directed L-SPE, although the recrystallized layers have a high-density of {111}twins due to {111} facet formation at the growth front occurring during the first 30 s of annealing, independent of implanted ions. On the other hand, in the case of <100>-directed L-SPE, the growth of {110} faceted regions progresses after annealing for a few tens of minutes before folded {111} facets are formed, resulting in a good crystal quality region of 0.1∼0.2μm remaining, measured from the mask edge.

Laser-Induced Solid Phase Epitaxy of Silicon Deposited Films

1980 ◽  
Vol 1 ◽  
Author(s):  
J.A. Roth ◽  
G.L. Olson ◽  
S.A. Kokorowski ◽  
L.D. Hess
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
Laser Technique ◽  
Amorphous Si ◽  
Si Films ◽  
Deposited Film ◽  
Deposited Films ◽  
Ion Implanted

ABSTRACTA comparative study of solid phase epitaxy (SPE) of deposited and ion-implanted amorphous Si films was conducted with the use of a newly developed laser technique. The effects of interface contaminants and contaminants distributed within a deposited film on the rate of SPE and final crystal quality are reported. In the absence of impurities, deposited Si films crystallize at the same rate as ion-implanted layers and yield epitaxial films with comparable crystal quality. The presence of impurities in deposited films at the interface or distributed within the film can severely retard the SPE growth, causing several deleterious effects which ultimately degrade the film quality. These effects are more severe at high temperatures.

The Application of Solid Phase Epitaxy for the Incorporation of Substitutional Carbon in Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
Jon J. Candelaria ◽  
J. K. Watanabe ◽  
N. Da Vid Theodore ◽  
Richard B. Gregory ◽  
Dieter K. Schroder ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Band Gap ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Electrical Measurements ◽  
High Quality ◽  
Carbon Incorporation ◽  
Crystalline Substrate ◽  
Single Implant

ABSTRACTCarbon was substitutionally incorporated into silicon using ion implantation and solid phase epitaxy (SPE) to regenerate a high quality crystalline substrate. Carbon was implanted into Si (100) substrates using a single implant of 25 keV ai doses ranging from 1.75 × 1015 to 1.05 × 1016/cm2. After carbon implantation half of the substrates were amorphized using a silicon implant. All of the wafers were subjected to a 700°C anneal in N2 ambient for 30 Minutes to induce SPE regrowth of the implanted regions. FTIR, SIMS, RBS, and TEM were used to characterize the samples. Results indicate that carbon was substitutionally incorporated into the silicon lattice, but that some carbon did precipitate to form silicon carbide. Post-amorphization improved regrowth of implanted regions in lower dose implanted wafers. Electrical Measurements on diode structures indicate that the band gap was reduced for carbon incorporation at these concentrations.

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