The Application of Solid Phase Epitaxy for the Incorporation of Substitutional Carbon in Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
Jon J. Candelaria ◽  
J. K. Watanabe ◽  
N. Da Vid Theodore ◽  
Richard B. Gregory ◽  
Dieter K. Schroder ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Band Gap ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Electrical Measurements ◽  
High Quality ◽  
Carbon Incorporation ◽  
Crystalline Substrate ◽  
Single Implant

ABSTRACTCarbon was substitutionally incorporated into silicon using ion implantation and solid phase epitaxy (SPE) to regenerate a high quality crystalline substrate. Carbon was implanted into Si (100) substrates using a single implant of 25 keV ai doses ranging from 1.75 × 1015 to 1.05 × 1016/cm2. After carbon implantation half of the substrates were amorphized using a silicon implant. All of the wafers were subjected to a 700°C anneal in N2 ambient for 30 Minutes to induce SPE regrowth of the implanted regions. FTIR, SIMS, RBS, and TEM were used to characterize the samples. Results indicate that carbon was substitutionally incorporated into the silicon lattice, but that some carbon did precipitate to form silicon carbide. Post-amorphization improved regrowth of implanted regions in lower dose implanted wafers. Electrical Measurements on diode structures indicate that the band gap was reduced for carbon incorporation at these concentrations.

Metastable Sic and SiGeC Alloys by Carbon Implantation and Solid Phase Epitaxy

1992 ◽  
Vol 280 ◽  
Author(s):  
J. W. Strane ◽  
W. J. Edwards ◽  
J. W. Mayer ◽  
H. S. Stain ◽  
B. R. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Vibrational Mode ◽  
Solid Phase ◽  
Metastable Phase ◽  
Diamond Lattice ◽  
Epitaxial Layers ◽  
Loss Of Stability ◽  
Solid Phase Epitaxy ◽  
Solid Phase Regrowth

ABSTRACTWe demonstrate the formation of metastable Si1-yCy and Si1-y-xGexCy alloys by C ion implantation and solid phase epitaxial regrowth. Carbon was introduced into Si and SiGe layers by 5, 12 and 25 keV implants to achieve nearly uniform profiles of 0.7 and 1.4 at.% C. The 0.7 at.% C specimens exhibit the highest quality epitaxial layers after SPE regrowth, whereas in higher C concentration specimens solid phase regrowth was impeded. The localized vibrational mode of C occupying substitutional lattice sites in the diamond lattice provides a signature of the metastable phase and is used to monitor the loss of stability due to precipitation of silicon carbide. The Sic and SiGeC alloys retained substitutional carbon during 30 minute isochronal anneals up to 850°C.

Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy

1996 ◽  
Vol 79 (2) ◽  
pp. 637 ◽  
Author(s):  
J. W. Strane ◽  
S. R. Lee ◽  
H. J. Stein ◽  
S. T. Picraux ◽  
J. K. Watanabe ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Carbon Incorporation ◽  
High Concentrations

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

Ge epilayer of high quality on a Si substrate by solid‐phase epitaxy

1993 ◽  
Vol 63 (10) ◽  
pp. 1405-1407 ◽  
Author(s):  
W. S. Liu ◽  
J. S. Chen ◽  
D. Y. C. Lie ◽  
M.‐A. Nicolet
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality

Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide

2006 ◽  
Vol 911 ◽  
Author(s):  
Zhaoxu Tian ◽  
Nathaniel R Quick ◽  
Aravinda Kar
Keyword(s):  
Silicon Carbide ◽  
Energy Dispersive Spectrometry ◽  
Solid Phase ◽  
Pin Diode ◽  
Carbon Incorporation ◽  
Pin Diodes ◽  
X Ray ◽  
Transmission Electron ◽  
Diffusion Technique ◽  
Doping Technique

AbstractA laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectrometry (XEDS) analysis showed that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopy (HREM) images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. The resistivity of the endolayer was 1.1 ¡Á105 &#61527;&#8226;cm and 9.4 ¡Á104 &#61527;&#8226;cm after annealing at 1000&#61616;C for 10 min. These resistivities provide device isolation for many applications. The silicon carbide endolayer was doped with aluminum using a laser doping technique to create p-region on the top surface of the endolayer in order to fabricate PIN diodes.

Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

2006 ◽  
Author(s):  
K. S. Lee ◽  
D. H. Yoo ◽  
G. H. Son ◽  
C. H. Lee ◽  
J. H. Noh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy
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