Ge epilayer of high quality on a Si substrate by solid‐phase epitaxy

1993 ◽  
Vol 63 (10) ◽  
pp. 1405-1407 ◽  
Author(s):  
W. S. Liu ◽  
J. S. Chen ◽  
D. Y. C. Lie ◽  
M.‐A. Nicolet
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality

Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

2010 ◽  
Vol 1245 ◽  
Author(s):  
Agata Sakic ◽  
Yann Civale ◽  
Lis K. Nanver ◽  
Cleber Biasotto ◽  
Vladimir Jovanovic
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Crystal Orientation ◽  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality ◽  
Lateral Overgrowth

AbstractSilicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100) Si substrate and have the ability to merge seamlessly over the oxide.

An Influence of the Si(111)3-4o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi2 Nanorods and their Crystal Parameters

2019 ◽  
Vol 806 ◽  
pp. 30-35
Author(s):  
Nikolay Gennadievich Galkin ◽  
Konstantin N. Galkin ◽  
Sergei Andreevich Dotsenko ◽  
Dmitrii L'vovich Goroshko ◽  
Evgeniy Anatolievich Chusovitin ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Solid Phase ◽  
Iron Silicide ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Spe Method ◽  
First Time

The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the substrate area) on Si (111) surface with 3-4o miscut angles were established. The aspect ratio of the nanorods is 1.9 – 3.3. Cross-sectional images of a high-resolution transmission electron microscopy (HRTEM) have shown that the nanorods have α-FeSi2 crystal structure. They are strained along the “a” axis and stretched along the “c” axis, which increased the unit cell volume by 10.3%. According to HRTEM image analysis, the nanorods have the following epitaxial relationships: α-FeSi2[01]//Si [10] and α-FeSi2(112)//Si (111). All the data obtained have provided, for the first time, a direct evidence of α-FeSi2 nanorods formation on Si (111) vicinal surface without noticeable penetration of Fe atoms into the Si substrate.

Marker Experiments for the moving Species in Silicides During Solid Phase Epitaxy of Evaporated Si

1983 ◽  
Vol 25 ◽  
Author(s):  
Chuen-Der Lien ◽  
Meir Bartur ◽  
Marc-A. Nicolet
Keyword(s):  
Nuclear Reaction ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Si Substrate ◽  
Marker Position

ABSTRACTEvaporated W, implanted Xe, and implanted 18O were used as markers to study the dominant moving species during (a) solid phase epitaxy (SPE) of evaporated Si, (b) silicide formation, and (c) oxidation of silicides on Si substrate.MeV 4He+ backscattering spectrometry and 18O (p, α)15 N nuclear reaction were used to monitor the evolution of elemental profiles as well as the change in the marker position. In most cases, the dominant moving species in SPE is the same as that observed in the formation and oxidation of that silicide. However, in CrSi2 the dominant moving species is Si during silicide formation, but Cr during SPE or oxidation.

High-Quality Thin Si Film By Spe Regrowth on Epitaxially Grown Spinel

1985 ◽  
Vol 53 ◽  
Author(s):  
Takafumi Kimura ◽  
Hideki Yamawaki ◽  
Yoshihiro Arimoto ◽  
Kazuto Ikeda ◽  
Masaru Ihara ◽  
...  
Keyword(s):  
Hall Mobility ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Stacking Fault ◽  
High Electron ◽  
Si Substrate ◽  
High Quality ◽  
Spinel Layer ◽  
Fault Density ◽  
Amorphous Si

ABSTRACTA high-quality thin Si layer on epitaxial spinel(MgO·Al2O3) on Si substrate has been developed. It was obtained by the solid phase epitaxial (SPE) regrowth of amorphous Si with Si seed islands on the epitaxially grown spinel. The SPE-Si layer on the epitaxial spinel was superior to conventional Si on sapphire (SOS) in stacking-fault density, Hall mobility, and contamination from the insulating materials. The SPESi layer has low stacking-fault density of 10–50 cm-2, even for 0.4 μm thickness. This value is eight orders of magnitude less than that of Si on epitaxial spinel obtained by vapor phase epitaxial (VPE) growth with SiH4. The SPE-Si also has high electron Hall mobility of 880 cm2/V-s for n=5×l016 cm-3, for 1-μm-thick Si. This value is about 85% of that in bulk Si, and is higher than that in Si on spinel grown by VPE-growth and SOS. (100) spinel layer was grown on (100) Si substrate by a MgCI2-Al-HCI-CO2-H2 VPE growth system. After thermal oxidation, Si seed islands were grown on the spinel by the pyrolysis of SiH4. Amorphous Si was deposited on the Si seed islands by chemical vapor deposition (CVD) of SiH4. The SPE-Si layer was obtained by regrowth of the amorphous Si in a hydrogen atmosphere.

Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate

1997 ◽  
Vol 293 (1-2) ◽  
pp. 310-314 ◽  
Author(s):  
Wen-Jie Qi ◽  
Bing-Zong Li ◽  
Guo-Bao Jiang ◽  
Zhi-Guang Gu ◽  
T.K. Kwok ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate

Formation of High Quality GaAs/Si Hetero-Structure by Solid Phase Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
M. Miyao ◽  
T. Shimada ◽  
A. Nishid ◽  
T. Inada ◽  
M. Tamura ◽  
...  
Keyword(s):  
Stress Field ◽  
Intensity Ratio ◽  
Solid Phase ◽  
High Density ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
High Quality ◽  
Hetero Structure

ABSTRACTImprovements of crystal quality in GaAs/Si heterostructure by solid phase epitaxy (SPE) are described. RBS and TEM measurements indicate that high density defects are located near the GaAs/Si interface after “2-step MBE”. Utilization of post SPE process (amorphization plus regrowth) significantly improve crystal qujali ty at the GaAs/Si interface, although a small stress field is introduced. In addition a new relation between photoluminecence intensity ratio and stress field is established. This provides a useful too] for measuring small stresses remaining in the GaAs/Si hetero-structure.

High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
P.K. Vasudev ◽  
A.E. Schmitz ◽  
G.L. Olson
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Impurity Effects ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Time Resolved ◽  
Boron Doped ◽  
Epitaxial Regrowth ◽  
Doping Profiles

ABSTRACTWe report on a systematic study of the doping profiles resulting from rapid thermal annealing of boron and BF2+-implanted silicon samples that were preamorphized by Si+ implantation. A two-step process consisting of an initial solid phase epitaxial regrowth followed by a brief (~5 sec) high temperature (1050ଌ) anneal produces extremely shallow (<1500Å) junctions with low defect concentrations. The quality of the epitaxial regrowth is very sensitive to implant conditions and impurity effects as deduced from time-resolved reflectivity measurements. Using the best conditions for implantation and solid phase crystallization, we have obtained boron-doped regions with sheet resistivities of 40 Ω/ and BF2-doped regions of resistivity 60 Ω/.

Formation and Relaxation of Ni(Au) Disilicide

1995 ◽  
Vol 402 ◽  
Author(s):  
D. Mangelinck ◽  
P. Ga ◽  
J. M. Gay ◽  
B. Pichaud
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Lattice Parameters ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Au Clusters ◽  
Relaxation Modes

AbstractThe formation and the relaxation of NiSi2 films with and without Au are examined by scanning electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. We studied the solid state reactions between a Ni(7 at.% Au) thin film and a Si substrate which occurs during the solid phase epitaxy before the formation of NiSi2. We show that the addition of Au to the Ni film drastically affects the silicides formation: Ni2Si and NiSi appear simultaneously and the nucleation temperature of NiSi 2 is lowered. The solubility of Au in the three silicides is limited which induces a precipitation of Au. Depending on temperature this precipitation takes various forms: Au enriched surface layer or Au clusters at inner interfaces. The films lattice parameters both parallel and perpendicular to the interface are also measured and compared to the lattice parameters of bulk samples which have been made by solidification from the melt. The relaxation modes are deduced from these measurements.

Study of the Crystalline to Amorphous Silicon Boundary Following Laser Induced Solid Phase Epitaxy.

1981 ◽  
Vol 4 ◽  
Author(s):  
J. P. Gonchond ◽  
G. A. Rozgonyi ◽  
D. Bois
Keyword(s):  
Chemical Etching ◽  
Laser Annealing ◽  
Solid Phase ◽  
Electrical Activation ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
Implantation Damage ◽  
Cw Laser ◽  
Higher Power ◽  
Voltage Contrast

ABSTRACTEBIC and voltage contrast SEM microscopy, combined with optical microscopy. chemical etching and Talystep profiling have been used to investigate cw laser annealing of a-Si in the slip-free SPE regime. Special attention is devoted to the edges and extremities of the line scans, i.e. to the c-to a-Si boundary. At very low power, evidence is given for an initial reordering and thus electrical activation stage of the a-Si. For the higher power range regrowth occurs through two different processes. The EBIC yield is interpreted in terms of a balance between annealing of the ion implantation damage and defect generation in the si substrate during the laser annealing. These results are extended to the case of a scanned electron beam annealing.

Ge Transport and Epitaxy on [111] Si in the Ge/Pd2Si/Si System

1989 ◽  
Vol 160 ◽  
Author(s):  
Q. Z. Hong ◽  
J. G. Zhu ◽  
W. Xia ◽  
J. W. Mayer
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
Temperature Range ◽  
Minimum Yield

AbstractSolid phase epitaxy in the amorphous(a)-Ge/Pd2Si/Si system has been investigated in the temperature range of 600 to 750 °C. The top Ge started to migrate into the suicide layer at 600 °C. After longer time annealing the mixed Ge released from the suicide matrix and formed a laterally uniform epitaxial Ge70Si30 layer on the [111] Si substrate. A minimum yield of 0.1 was achieved for a 800 Å-thick Ge70Ge30 layer.

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