Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

1989 ◽  
Vol 160 ◽  
Author(s):  
B.J. Robinson ◽  
B.T. Chilton ◽  
P. Ferret ◽  
D.A. Thompson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
Strained Layers ◽  
Transmission Electron ◽  
Layer Structures

AbstractSingle strained layer structures of up to 30 nm of Si1-xGex. on (100) Si and capped with 30-36 nm of Si have been amorphized by implantation with 120 keV As . The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.

Microstructure of Oxidized Ge0.78SiO.12 annealed in a Reducing Ambient

1995 ◽  
Vol 379 ◽  
Author(s):  
N.D. Theodore ◽  
W.S. Liu ◽  
D.Y.C. Lie ◽  
T.K. Cams ◽  
K.L. Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Seeding Layer ◽  
Transmission Electron ◽  
Microstructural Behavior ◽  
Defect Densities

ABSTRACTTransmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2+ 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-Sio2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

2001 ◽  
Vol 16 (11) ◽  
pp. 3229-3237 ◽  
Author(s):  
A. C. Y. Liu ◽  
J. C. McCallum ◽  
J. Wong-Leung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Atomic Force ◽  
Transmission Electron

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

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