Recrystallization of Si-, As- And BF2-Implanted, Bonded SOI

1997 ◽  
Vol 481 ◽  
Author(s):  
M. Tamura ◽  
M. Horiuchi

ABSTRACTConventional and high-resolution cross-sectional TEM observations have been carried out on Si-, As- and BF2-implanted, bonded 100-nm-thick (001) SOI layers having polycrystalline Si (poly-Si) masks followed by annealing at 600°C. Amorphized SOI layers by these ion implantations are recrystallized through lateral solid-phase seeding epitaxy (L-SPE) by single crystal SOI under the poly-Si mask as a seed. The recrystallization of these SOI layers is completed in the order of BF2-, Si- and As-implanted layers by <110>-directed L-SPE, although the recrystallized layers have a high-density of {111}twins due to {111} facet formation at the growth front occurring during the first 30 s of annealing, independent of implanted ions. On the other hand, in the case of <100>-directed L-SPE, the growth of {110} faceted regions progresses after annealing for a few tens of minutes before folded {111} facets are formed, resulting in a good crystal quality region of 0.1∼0.2μm remaining, measured from the mask edge.

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.


1989 ◽  
Vol 145 ◽  
Author(s):  
Jo De Boeck ◽  
Jiben Liang ◽  
Jan Vanhellemont ◽  
Kristin Deneffe ◽  
Chris Van Hoof ◽  
...  

AbstractGaAs is grown embedded in pre-etched wells in the Si substrate. HNO3:HF, KOH:H2O and a dry etch technique are used as alternatives to form the wells. Cross-sectional SEM views of AlGaAs/GaAs heterostructures reveal the growth front and facet formation for the different sidewall geometries. Transmission electron microscopy is used to study epilayer degradation in relation to the substrate damage and the presence of edge induced defects in the GaAs. Cathodoluminescence reveals the uniformity of strain present in the GaAs layer embedded in the wet etched well. The impact of the different etching techniques on device integration is briefly discussed.


2000 ◽  
Vol 643 ◽  
Author(s):  
Hiroyuki Takakura ◽  
Akiji Yamamoto ◽  
An Pang Tsai

AbstractThe models of decagonal Al72Ni20Co8 quasicrystal with the space group of P105/mmc were refined on the basis of single crystal x-ray diffraction data set using the 5D description. The results of a structure model derived from Al13Fe4-type approximant crystal and Burkov model are compared. The former gives ω R=0.045 and R=0.063 for 449 reflections with 103 parameters and a resonable chemical composition of Al71.2TM28.8 (TM=transition metals). The projected structure in consistent with high resolution images of this material. On the other hand, the latter gives ωR=0.161 and R=0.193 for 55 parameters and a compositon of Al64.6TM35.1.


HortScience ◽  
1996 ◽  
Vol 31 (3) ◽  
pp. 370-375 ◽  
Author(s):  
Richard E.C. Layne ◽  
Chin S. Tan ◽  
David M. Hunter ◽  
Robert A. Cline

Seven treatment combinations of irrigation and fertilizer were compared in a high-density (606 trees/ha) management system for peach [Prunus persica (L.) Batsch cv. Harrow Beauty/Bailey] on Fox sand in southwestern Ontario. Each treatment combination had an irrigation component (N = nonirrigated, D = drip irrigated, or M = microsprinkler irrigated) and a fertilizer placement component (B = banded fertilizer, L = low fertigation, or H = high fertigation). NB and DB are commonly used systems in Ontario, while the other five treatment combinations were experimental. Total soil water in the top 110 cm of soil was lowest under NB but was never at the permanent wilting point. Trunk cross-sectional area was largest under DH and DB, smallest under ML and NB, and intermediate for the other three treatment combinations. No symptoms of N or K deficiency or toxicity were noted for any of the fertilizer treatments. Leaf analyses in July and September indicated that most major and minor elements were in the adequate to slightly excess range. However, there were no significant treatment effects on leaf nutrient concentrations in July or September when averaged over the five years, except for Mg in July. There were large and significant year effects on leaf nutrient concentrations but no significant treatment × year interactions. During the first four cropping years, there were no significant treatment effects, averaged over years, for total yield, marketable yield, or cumulative yield efficiency; however, there were large year effects but no treatment × year interactions for these factors. There was no detectable yield advantage for D vs. M irrigation. B application of N and K promoted no higher yields than fertigation equivalent to the B rate or 50% of this rate. Fertigation of N and K during the first 4 years of this experiment did not provide a detectable yield advantage to warrant the added cost and labor associated with this system compared with the B applications of N and K.


1988 ◽  
Vol 144 ◽  
Author(s):  
M. Miyao ◽  
T. Shimada ◽  
A. Nishid ◽  
T. Inada ◽  
M. Tamura ◽  
...  

ABSTRACTImprovements of crystal quality in GaAs/Si heterostructure by solid phase epitaxy (SPE) are described. RBS and TEM measurements indicate that high density defects are located near the GaAs/Si interface after “2-step MBE”. Utilization of post SPE process (amorphization plus regrowth) significantly improve crystal qujali ty at the GaAs/Si interface, although a small stress field is introduced. In addition a new relation between photoluminecence intensity ratio and stress field is established. This provides a useful too] for measuring small stresses remaining in the GaAs/Si hetero-structure.


2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.


2021 ◽  
Vol 45 (4) ◽  
pp. 325-330
Author(s):  
Ha Mok Jeong ◽  
Young Ha Jeong ◽  
Joon Shik Yoon

Objective To investigate the characteristics of the palmar cutaneous branch of the median nerve (PCBMN) in patient with carpal tunnel syndrome (CTS) using high-resolution ultrasound.Methods Fourteen healthy volunteers (17 wrists) and 31 patients with CTS (41 wrists) were evaluated by high-resolution ultrasound. All patients were classified into three groups based on the electrophysiologic CTS impairment severity: mild, moderate, and severe. Using high-resolution ultrasound, the cross-sectional areas (CSAs) of the PCBMN were measured at the proximal wrist crease, bistyloid line, and distal wrist crease, and the largest CSA was defined as the maximal CSA.Results The maximal CSA of the PCBMN of the control, mild, moderate, and severe CTS groups were 0.27±0.08, 0.30±0.07, 0.35±0.10, and 0.47±0.13 mm2, respectively. The maximal CSA of the PCBMN was significantly larger in the severe CTS group than in the other groups.Conclusion The PCBMN could be concomitantly affected in patients with severe CTS.


HortScience ◽  
1995 ◽  
Vol 30 (4) ◽  
pp. 792E-792
Author(s):  
Richard E.C. Layne ◽  
Chin S. Tan ◽  
David M. Hunter ◽  
Robert A. Cline

Seven high-density (606 trees/ha) management systems for peach [Prunus persica (L.) Batsch cv. Harrow Beauty/Bailey] were compared on Fox sand in southwestern Ontario. Each system had an irrigation component (N = none D = drip, M = microsprinkler) and a fertilizer placement component (B = banded, L= low-rate fertigation, H = high rate fertigation). NB (nonirrigated, banded fertilizer) and DB (drip-irrigated) are commonly used systems in Ontario, while the other five treatment combinations were experimental. Trunk cross-sectional area (TCA) was generally greatest for DH and DB systems, smallest for ML and NB systems, and intermediate for the other three. No symptoms of N or K deficiency or excess were noted for any of the fertilizer treatments. The seven management systems each had similar cumulative yield efficiencies for the first 4 cropping years However, total marketable yields for the 4 years were highest for MB (58.7 t·ha–1), followed in descending order by DB (56.8 t·ha–1), DH (56.6 t·ha–1), MH (53.9 t·ha–1), DL (50.6 t·ha–1), ML (49.8 t·ha–1), and NB (47.5 t·ha–1). Each of the irrigated treatments outyielded the nonirrigated check (NB) and ranged from 4.8% to 23.6%. Only one of the irrigated treatments (MB) outyielded the irrigated check (DB), and by only 3.3%. There was no clear advantage for either the drip or microsprinkler system of irrigation. Banded application of N and K appeared to promote higher yields than by fertigation equivalent to the banded rate, while yields at the low rate of fertigation were lower than for either the high rate of fertigation or the banded application. It appeared that banded fertilizer combined with either microsprinkler (MB) or drip irrigation DB provided the most-effective of the management systems in the first 4 cropping years.


High-resolution transmission electron microscopy and selected-area electron diffraction show that all phases of the general formula [Ba x Cs y [(Al, Ti) 3+ 2 x + y Ti 4+ 8-2 x - y ] O 16 , 1.08 ≼ x + y ≼ 1.51 have the hollandite-type substructure. These hollandites display commensurate and incommensurate superlattices owing to the ordered insertion of large cations (Ba 2+ , Cs + ) into the (2, 2) tunnel interstices of the octahedral (Al, Ti) O 6 framework. Multiplicity ( m ) of a supercell is defined as d supercell divided by d 002 for the subcell. Ordering may be one-dimensional, in which case the cation sequences between (2, 2) channels are independent, three-dimensional with lateral correlation between tunnels, or a combination of both. One-dimensional superstructures yield commensurate multiplicities of 4 in all phases except an aluminous caesium hollandite where m = 6. Three-dimensional superstructures are both incommensurate and commensurate, with 4.5 0 ≼ m ≼ 6.5 9 . Multiplicities correlate directly with caesium content per formula unit, establishing a maximum in caesiumrich hollandites. Among barium ( y = 0) and caesium endmembers, ( x = 0) multiplicities increase modestly with increasing Al 3+ : (Al + Ti) 3+ content. Superstructure dimensionality is largely determined by the nature and proportions of the trivalent species, rather than the tunnel cations; one-dimensional order is commonplace in hollandites rich in trivalent titanium but rare in aluminous hollandites. High-resolution electron microscopy supports the interpretation of incommensurate superstructures as fine-scale intergrowths of commensurate microdomains with m = 4, 5, 6 or 7. For aluminous hollandites, rare examples of structural modifications involving tunnels of different cross-sectional dimensions may be found, i. e. T(2, n ), 1 ≼ n ≼ 3 intergrowths. As all specimens are sensitive to the electron beam, prolonged irradiation at high electron fluxes can initiate the transformation of single-crystal hollandite to single-crystal rutile. A mechanism for this transformation is proposed, whereby the hollandite crystals initially adjust their multiplicity to six. Growth fronts on {101} holl subsequently propagate through the crystals consuming hollandite and leaving rutile: the structure of the interface between the phases is believed to contain components of rutile possessing antiphase boundaries. In this reconstructive transformation, [100] of the newly formed rutile invariably lies almost parallel to [110] of the original hollandite. Less severe electron irradiation or argon ion beam milling causes crystals to twin polysynthetically. The superlattice properties of [Ba x Cs y [(Ti, Al) 3+ 2 x + y Ti 4+ 8-2 x - y ] O 16 hollandites are integrated with those of other hollandites to identify and evaluate the factors responsible for the stoichiometries and preferred superstructures of hollandites in general. These factors include electrostatic repulsion between large cations in the same tunnel, interaction between cations in neighbouring tunnels, the shielding capacity of the octahedral framework, and kinetic effects.


1986 ◽  
Vol 74 ◽  
Author(s):  
Christian Licoppe ◽  
Yves. I. Nissim ◽  
Christelle Meriadec ◽  
Pierre Henoc ◽  
Cecile D'Anterroches

AbstractThe amorphous-crystalline (with residual defects) transition is studied in several III-V binary semiconductors and a ternary alloy. Regrowth shows the same behaviour in all cases. The growth kinetics are thermally activated and the activation energies have been measured using time resolved reflectivity measurements. Correlation with vacancy migration characteristic energy is discussed. In the particular case of GaAs, high resolution electron micrograph of the growth front are displayed. They show a rough microscopic structures together with larger scale smooth deformations, attributed to diffusion instabilities.


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