Electron Beam Study of Silicide Schottky Diodes

1981 ◽  
Vol 10 ◽  
Author(s):  
H.-C. W. Huang ◽  
C. F. Aliotta ◽  
P. S. Ho
Keyword(s):  
Electron Beam ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Silicon Substrates ◽  
Induced Voltage ◽  
Height Variation ◽  
Quantitative Studies ◽  
Electron Beam Induced Current ◽  
Composite Silicide ◽  
Ti Films

An electron-beam-induced voltage (EBIV) technique has been developed to measure the barrier height of Schottky diodes. The principle of this technique is described and is compared with the conventional electron-beam-induced current (EBIC) technique. Applications of both techniques are illustrated in a study of composite silicide Schottky diodes with mixed high and low barrier areas formed using bilayer and co-evaporated Pd-Ti and Pt-Ti films on silicon substrates. The difficulty of using EBIC for quantitative studies of diode characteristics is discussed and contrasted with the advantages of the EBIV technique. The extension of the EBIV technique to contactless measurements of barrier height variation with good lateral resolution is described.

Schottky barrier height measurement by electron‐beam induced voltage

1982 ◽  
Vol 41 (1) ◽  
pp. 54-56 ◽  
Author(s):  
H.‐C. W. Huang ◽  
C. F. Aliotta ◽  
P. S. Ho
Keyword(s):  
Electron Beam ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Induced Voltage ◽  
Height Measurement

Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

1991 ◽  
Vol 58 (4) ◽  
pp. 382-384 ◽  
Author(s):  
J. C. Costa ◽  
F. Williamson ◽  
T. J. Miller ◽  
K. Beyzavi ◽  
M. I. Nathan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Height Variation ◽  
Thin Silicon

Evolution of Ti Schottky Barrier Heights on n-Type GaN with Annealing

1996 ◽  
Vol 449 ◽  
Author(s):  
Michèle T. Hirsch ◽  
Kristin J. Duxstad ◽  
E. E. Haller
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Electron Beam Evaporation ◽  
Organic Vapor ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Mott Model ◽  
Current Voltage ◽  
Metal Organic ◽  
Ti Films

ABSTRACTWe report the effect of mild annealing on Ti Schottky diodes on n-type GaN. The Ti films were deposited by electron beam evaporation on n-type GaN grown by metal organic vapor deposition. We determine the effective barrier height Ф60 by current-voltage measurements as a function of temperature. The as-deposited Ti contacts show rectifying behavior with low barrier heights Ф60 ≤ 200meV. At annealing temperatures as low as 60°C we observe an increase of the barrier height to values of 250meV. After annealing at 230°C and above a stable barrier height of 450meV is measured. The increase in barrier height is not due to any macroscopic interfacial reaction. The origin of the observed changes are discussed in terms of the Schottky-Mott model and possible microscopic interfacial reactions.

Electron Beam Induced Current Imaging of Ferroelectric Thin Films

1999 ◽  
Vol 574 ◽  
Author(s):  
Igor Lubomirsky ◽  
Tzu Yu Wang ◽  
Konstantin Gartsman ◽  
Oscar M. Stafsudd
Keyword(s):  
Electron Beam ◽  
Electric Field ◽  
Life Time ◽  
Silicon Substrates ◽  
Induced Current ◽  
Thermally Induced ◽  
Electron Beam Induced Current ◽  
Polarization Gradient ◽  
Carrier Life Time ◽  
Better Than

AbstractWe have observed Electron Beam Induced Current imaging of thin film ferroelectrics. The Electron beam irradiation of a thin ferroelectric film creates a local temperature gradient that induces a polarization gradient and therefore a local electric field. Although the temperature difference is small the gradient is on the order of thousands K/cm and results in a corresponding electric field of a few MV/cm. The thermally induced electric field drives the electron beam created carriers toward an electrode thus inducing an externally measurable current. Despite the very small carrier life time (<1 ns) in ferroelectrics, the induced electric field is strong enough to collect carriers from a few hundred nm depth before recombination. An EBIC gain of 5 to 20 was measured experimentally with BaTiO3 and LiTaO3 films on silicon substrates. This method is insensitive to charge traps and provides a resolution better than 1 μm.

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

2017 ◽  
Vol 64 (10) ◽  
pp. 4050-4056 ◽  
Author(s):  
Marcin Hajlasz ◽  
Johan J. T. M. Donkers ◽  
Saurabh Pandey ◽  
Fred Hurkx ◽  
Raymond J. E. Hueting ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Variation

Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

1985 ◽  
Vol 56 ◽  
Author(s):  
J.M. Gibson ◽  
D.C. Joy ◽  
R.T. Tung ◽  
J.L. Ellison ◽  
C. Pimentel ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Local Variation ◽  
Nickel Silicide ◽  
Induced Current ◽  
Barrier Heights ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Electron Beam Induced Current

AbstractWe discuss the use of electron beam induced current measurements in a scanning electron microscope to deduce local Schottky barrier height with high spatial resolution. For theNiSi2/Si system, using UHV-prepared thin “templates”, wedemonstrate the uniformity of barrier heights for A or B single crystal films. In comparison, there is evidence for local variation of barrier height in mixed A+B films. Quantitative models for EBIC dependence on barrier height are discussed. Local variations in barrier height can be overlooked by other techniques and may be much more common than previously suspected.

Residual Gas Reaction in the Electron Microscope: II The Design of a Gas-Control Chamber for Quantitative Observations

1969 ◽  
Vol 27 ◽  
pp. 82-83
Author(s):  
Chester J. Calbick ◽  
Richard E. Hartman
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Local Environment ◽  
Chamber Pressure ◽  
Objective Lens ◽  
Ion Pump ◽  
Quantitative Studies ◽  
Precise Knowledge ◽  
Differential Pumping ◽  
And Control

Quantitative studies of the phenomenon associated with reactions induced by the electron beam between specimens and gases present in the electron microscope require precise knowledge and control of the local environment experienced by the portion of the specimen in the electron beam. Because of outgassing phenomena, the environment at the irradiated portion of the specimen is very different from that in any place where gas pressures and compositions can be measured. We have found that differential pumping of the specimen chamber by a 4" Orb-Ion pump, following roughing by a zeolite sorption pump, can produce a specimen-chamber pressure 100- to 1000-fold less than that in the region below the objective lens.

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