Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes

2005 ◽  
Vol 97 (1) ◽  
pp. 013540 ◽  
Author(s):  
Y. Wang ◽  
G. N. Ali ◽  
M. K. Mikhov ◽  
V. Vaidyanathan ◽  
B. J. Skromme ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Schottky Diodes ◽  
Induced Current ◽  
Morphological Defects ◽  
Electron Beam Induced Current

scholarly journals Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 45
Author(s):  
Anna Reszka ◽  
Krzysztof P. Korona ◽  
Stanislav Tiagulskyi ◽  
Henryk Turski ◽  
Uwe Jahn ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Quantum Wells ◽  
Electronic Band Structure ◽  
Optical And Electrical Properties ◽  
Induced Current ◽  
Electronic Band ◽  
Electron Beam Induced Current ◽  
Spectrally Resolved ◽  
P Type

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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