Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

1991 ◽  
Vol 58 (4) ◽  
pp. 382-384 ◽  
Author(s):  
J. C. Costa ◽  
F. Williamson ◽  
T. J. Miller ◽  
K. Beyzavi ◽  
M. I. Nathan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Height Variation ◽  
Thin Silicon

Comparison of Parameter Extraction Techniques for SiC Schottky Diodes

2006 ◽  
Vol 911 ◽  
Author(s):  
Ming Hung Weng ◽  
Alton B. Horsfall ◽  
Nick G. Wright ◽  
Konstantin V. Vassilevski ◽  
Irina P. Nikitina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Parameter Extraction ◽  
Emission Model ◽  
Schottky Barrier Diodes ◽  
Extraction Techniques

AbstractSchottky barrier diodes fabricated on Silicon carbide have been demonstrated as gas sensors for deployment in extreme environments. It has been shown that the interfacial layer formed at the Metal – Semiconductor junction, determines both the sensitivity and the reliability of the device. Hence, accurate knowledge of the thickness and interfacial trap density of this layer is required to make predictions of the behaviour of the sensor in the environment under investigation and to predict its variation with time. Diode parameters, such as the ideality factor, barrier height and series resistance have been extracted from experimental measurements on Palladium Schottky Barrier diodes on 4H SiC, over a range of temperatures. The comparison of the parameters extracted from modified Norde function, Cheung's method and Thermonic Emission model has been performed. The variation in the barrier height obtained is quite marked between the different techniques. The reverse I-V characteristics have been used to extract thickness of the interfacial layer, by fitting to the experimental data using the TEBIL model to extract the value of Dit from ä and the ideality factor, assuming the interfacial layer is stoichiometric SiO2 . This allows a comparison between the effective interfacial layer behaviour for the different parameter extraction techniques and demonstrates that knowledge of this interfacial layer is influenced by the technique selected.

Electron Beam Study of Silicide Schottky Diodes

1981 ◽  
Vol 10 ◽  
Author(s):  
H.-C. W. Huang ◽  
C. F. Aliotta ◽  
P. S. Ho
Keyword(s):  
Electron Beam ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Silicon Substrates ◽  
Induced Voltage ◽  
Height Variation ◽  
Quantitative Studies ◽  
Electron Beam Induced Current ◽  
Composite Silicide ◽  
Ti Films

An electron-beam-induced voltage (EBIV) technique has been developed to measure the barrier height of Schottky diodes. The principle of this technique is described and is compared with the conventional electron-beam-induced current (EBIC) technique. Applications of both techniques are illustrated in a study of composite silicide Schottky diodes with mixed high and low barrier areas formed using bilayer and co-evaporated Pd-Ti and Pt-Ti films on silicon substrates. The difficulty of using EBIC for quantitative studies of diode characteristics is discussed and contrasted with the advantages of the EBIV technique. The extension of the EBIV technique to contactless measurements of barrier height variation with good lateral resolution is described.

Time Dependence of Current–Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

2011 ◽  
Vol 66 (8-9) ◽  
pp. 576-580 ◽  
Author(s):  
Nazim Ucar ◽  
Ahmet Faruk Özdemira ◽  
Durmus Ali Aldemira ◽  
Güven Çankayab
Keyword(s):  
Hydrostatic Pressure ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Pressure Coefficient ◽  
Characteristic Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The effect of time on the characteristic parameters of Pb/p-Si Schottky diodes has been presented as a function of hydrostatic pressure. Current-voltage curves of the Pb=p-Si Schottky diodes have been measured at immediate, 15, 30, 60, and 120 min intervals under 1, 2, and 4 kbar hydrostatic pressure. It has been found that the values of the ideality factor have been approximately unchanged with increasing time. On the other hand, the barrier height of the Pb=p-Si structure slowly increase with increasing time, while these parameters also change with hydrostatic pressure. The diode shows nonideal current-voltage behaviour with an ideality factor greater than unity that can be ascribed to the interfacial layer and the interface states. In addition, the Schottky barrier height increases with a linear pressure coefficient of 92 meV=kbar, which is higher than the pressure coefficient of the silicon fundamental band gap.

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

2017 ◽  
Vol 64 (10) ◽  
pp. 4050-4056 ◽  
Author(s):  
Marcin Hajlasz ◽  
Johan J. T. M. Donkers ◽  
Saurabh Pandey ◽  
Fred Hurkx ◽  
Raymond J. E. Hueting ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Variation

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

2016 ◽  
Vol 119 (6) ◽  
pp. 064501 ◽  
Author(s):  
Matthew A. Laurent ◽  
Geetak Gupta ◽  
Donald J. Suntrup ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Barrier Height ◽  
Schottky Diodes

Barrier height and current passage mechanisms in Schottky diodes based in Mn x Hg 1-x Te

2001 ◽  
Author(s):  
Andrey V. Markov ◽  
Oksana O. Bodnaruk ◽  
O. V. Lazareva ◽  
Sergey E. Ostapov ◽  
Ilary M. Rarenko ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Current Passage
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