Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

1985 ◽  
Vol 56 ◽  
Author(s):  
J.M. Gibson ◽  
D.C. Joy ◽  
R.T. Tung ◽  
J.L. Ellison ◽  
C. Pimentel ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Local Variation ◽  
Nickel Silicide ◽  
Induced Current ◽  
Barrier Heights ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Electron Beam Induced Current

AbstractWe discuss the use of electron beam induced current measurements in a scanning electron microscope to deduce local Schottky barrier height with high spatial resolution. For theNiSi2/Si system, using UHV-prepared thin “templates”, wedemonstrate the uniformity of barrier heights for A or B single crystal films. In comparison, there is evidence for local variation of barrier height in mixed A+B films. Quantitative models for EBIC dependence on barrier height are discussed. Local variations in barrier height can be overlooked by other techniques and may be much more common than previously suspected.

Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

2020 ◽  
Vol 49 (9) ◽  
pp. 5196-5204
Author(s):  
Jun Chen ◽  
Wei Yi ◽  
Ashutosh Kumar ◽  
Akio Iwanade ◽  
Ryo Tanaka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Induced Current ◽  
Electron Beam Induced Current

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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