Evolution of Ti Schottky Barrier Heights on n-Type GaN with Annealing

1996 ◽  
Vol 449 ◽  
Author(s):  
Michèle T. Hirsch ◽  
Kristin J. Duxstad ◽  
E. E. Haller
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Electron Beam Evaporation ◽  
Organic Vapor ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Mott Model ◽  
Current Voltage ◽  
Metal Organic ◽  
Ti Films

ABSTRACTWe report the effect of mild annealing on Ti Schottky diodes on n-type GaN. The Ti films were deposited by electron beam evaporation on n-type GaN grown by metal organic vapor deposition. We determine the effective barrier height Ф60 by current-voltage measurements as a function of temperature. The as-deposited Ti contacts show rectifying behavior with low barrier heights Ф60 ≤ 200meV. At annealing temperatures as low as 60°C we observe an increase of the barrier height to values of 250meV. After annealing at 230°C and above a stable barrier height of 450meV is measured. The increase in barrier height is not due to any macroscopic interfacial reaction. The origin of the observed changes are discussed in terms of the Schottky-Mott model and possible microscopic interfacial reactions.

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

scholarly journals Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
B. Prasanna Lakshmi ◽  
R. Padma
Keyword(s):  
Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Current Voltage ◽  
State Densities ◽  
Optimum Annealing Temperature

The effect of annealing temperature on electrical characteristics of iridium (Ir) and iridium/gold (Ir/Au) Schottky contacts to n-type InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. It is observed that the barrier height of Ir/n-InGaN and Au/Ir/n-InGaN Schottky diodes increases after annealing at 300∘C for 1 min in N2 ambient compared to the as-deposited. However, the barrier heights are found to be decreased somewhat after annealing at 500∘C for the both Ir and Ir/Au Schottky contacts. From the above observations, it is clear that the optimum annealing temperature for both Ir and Ir/Au Schottky contacts is 300∘C. Moreover, the barrier height (ϕb), ideality factor (n) and series resistance (RS) are determined using Cheung’s and Norde methods. Besides, the energy distribution of interface state densities are determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Based on the above results, it is clear that both Ir and Ir/Au Schottky contacts exhibit a kind of thermal stability during annealing.

Quasi-Schottky Diodes on (n)In.53Ga.47as with Barrier Heights of 0.6 eV

1991 ◽  
Vol 240 ◽  
Author(s):  
M. Marso ◽  
P. Kordoš ◽  
R. Meyer ◽  
H. Lüth
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Surface Layers ◽  
Fully Depleted ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Basic Parameters ◽  
And Control

ABSTRACTThe modification and control of the Schottky barrier height on (n)InGaAs is an important tool at the device preparation as the barrier height is very low, øB° = 0.2 eV. We report about the Schottky barrier enhancement on (n)InGaAs by thin fully depleted surface layers of high doped (p+)InGaAs. Structures with different thicknesses of (p+)InGaAs in the range from 8 to 80 nm were grown by LP MOVPE technique and quasi-Schottky diodes with different contact areas were prepared using titanium as a barrier metal. I-V and I-T characteristics were measured and analysed to obtain basic parameters of prepared diodes, i. e. ideality factor n, effective barrier height øB, series resistance Rgand reverse current density JR (1V). The barrier height enhancement increases with the thickness of the (p+)-layer. Effective barrier heights of øB>0.6 eV, i.e. higher than reported until now, can be obtained with the surface layers of (p+)InGaAs with thicknesses exceeding 25 nm.

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights

2019 ◽  
Vol 963 ◽  
pp. 506-510
Author(s):  
Michael Schneider ◽  
Laura Stöber ◽  
Jens P. Konrath ◽  
Florian Patocka ◽  
Ulrich Schmid
Keyword(s):  
Silicon Carbide ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Molybdenum Nitride ◽  
Barrier Heights ◽  
Straightforward Method ◽  
Current Voltage ◽  
Argon Ion Bombardment ◽  
The Impact

In this paper, the impact of substrate preconditioning by ion bombardment in-situ in a conventional sputter equipment on n-doped 4H-silicon carbide (SiC) Schottky diodes with molybdenum nitride metallization is studied. By variation of the plasma power during argon ion bombardment, the effective barrier height is adjustable in the range from 0.66 to 0.96 eV, as deduced by current / voltage measurements over a wide temperature range. Therefore, this approach offers a straightforward method to tailor the Schottky barrier height over a significant range by introducing an insitu substrate pretreatment step available in most sputter equipment.

scholarly journals Schottky diodes based on 4H-SiC epitaxial layers

2021 ◽  
Vol 2103 (1) ◽  
pp. 012235
Author(s):  
A M Strel’chuk ◽  
E V Kalinina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Alternative Explanation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Epitaxial Layers ◽  
Barrier Heights ◽  
Current Voltage ◽  
Significant Spread

Abstract Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 1015 cm-3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.

Quantum mechanical tunnelling: the missing term to achieve sub-kJ mol−1 barrier heights

2021 ◽  
Author(s):  
Sebastian Kozuch ◽  
Tim Schleif ◽  
Amir Karton
Keyword(s):  
Barrier Height ◽  
Quantum Mechanical ◽  
Effective Barrier Height ◽  
Quantum Tunnelling ◽  
Barrier Heights ◽  
Effective Barrier

Quantum tunnelling can lower the effective barrier height, creating a discrepancy between experiment and theory.

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

1992 ◽  
Vol 281 ◽  
Author(s):  
J. T. Hsieh ◽  
C. Y. Sun ◽  
H. L. Hwang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Schottky Diodes ◽  
Lower Surface ◽  
State Density ◽  
Surface Band ◽  
Band Bending ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Metal Work

ABSTRACTA new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 710-713 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface Traps ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
Current Voltage Characteristics ◽  
Expected Values

This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.

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