Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

2017 ◽  
Vol 64 (10) ◽  
pp. 4050-4056 ◽  
Author(s):  
Marcin Hajlasz ◽  
Johan J. T. M. Donkers ◽  
Saurabh Pandey ◽  
Fred Hurkx ◽  
Raymond J. E. Hueting ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Variation

Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

1991 ◽  
Vol 58 (4) ◽  
pp. 382-384 ◽  
Author(s):  
J. C. Costa ◽  
F. Williamson ◽  
T. J. Miller ◽  
K. Beyzavi ◽  
M. I. Nathan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Height Variation ◽  
Thin Silicon

Electron Beam Study of Silicide Schottky Diodes

1981 ◽  
Vol 10 ◽  
Author(s):  
H.-C. W. Huang ◽  
C. F. Aliotta ◽  
P. S. Ho
Keyword(s):  
Electron Beam ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Silicon Substrates ◽  
Induced Voltage ◽  
Height Variation ◽  
Quantitative Studies ◽  
Electron Beam Induced Current ◽  
Composite Silicide ◽  
Ti Films

An electron-beam-induced voltage (EBIV) technique has been developed to measure the barrier height of Schottky diodes. The principle of this technique is described and is compared with the conventional electron-beam-induced current (EBIC) technique. Applications of both techniques are illustrated in a study of composite silicide Schottky diodes with mixed high and low barrier areas formed using bilayer and co-evaporated Pd-Ti and Pt-Ti films on silicon substrates. The difficulty of using EBIC for quantitative studies of diode characteristics is discussed and contrasted with the advantages of the EBIV technique. The extension of the EBIV technique to contactless measurements of barrier height variation with good lateral resolution is described.

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

2016 ◽  
Vol 119 (6) ◽  
pp. 064501 ◽  
Author(s):  
Matthew A. Laurent ◽  
Geetak Gupta ◽  
Donald J. Suntrup ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Barrier Height ◽  
Schottky Diodes

Barrier height and current passage mechanisms in Schottky diodes based in Mn x Hg 1-x Te

2001 ◽  
Author(s):  
Andrey V. Markov ◽  
Oksana O. Bodnaruk ◽  
O. V. Lazareva ◽  
Sergey E. Ostapov ◽  
Ilary M. Rarenko ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Current Passage

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Energy barrier height variations of Pd—Si Schottky diodes induced by deuterium

1983 ◽  
Vol 4 (4) ◽  
pp. 73-75 ◽  
Author(s):  
A. Diligenti ◽  
M. Stagi ◽  
V. Ciuti ◽  
M. Schiaffino
Keyword(s):  
Barrier Height ◽  
Energy Barrier ◽  
Schottky Diodes
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