Electrochemical Capacitance‐Voltage Profiling: A New Technique to Study Plasma Damage during a Plasma‐Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 140 (7) ◽  
pp. 2038-2041 ◽  
Author(s):  
N. DasGupta ◽  
R. Riemenschneider ◽  
H. L. Hartnagel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
New Technique ◽  
Electrochemical Capacitance ◽  
Plasma Damage ◽  
Capacitance Voltage ◽  
A New Technique

Organometallics-chemical vapor deposition: A new technique for the preparation of non-acidic, zeolitesupported Pd and Pt catalysts

1993 ◽  
Vol 17 (3) ◽  
pp. 527-535 ◽  
Author(s):  
C. Dossi ◽  
R. Psaro ◽  
A. Bartsch ◽  
E. Brivio ◽  
A. Galasco ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
New Technique ◽  
Pt Catalysts ◽  
A New Technique

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-kFilms with Plasma Damage Resistance

2010 ◽  
Vol 49 (5) ◽  
pp. 05FF03 ◽  
Author(s):  
Yoshi Ohashi ◽  
Nobuo Tajima ◽  
Yonghua Xu ◽  
Takeshi Kada ◽  
Shuji Nagano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Damage ◽  
Damage Resistance

The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples

1999 ◽  
Vol 572 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Energy Levels ◽  
Chemical Vapor ◽  
Hopping Conduction ◽  
Admittance Spectroscopy ◽  
Nitrogen Levels ◽  
Capacitance Voltage ◽  
Sandwich Method

ABSTRACTThermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition ( CVD) grown thin films and in sublimation sandwich method ( SSM) grown 4H-SiC layers. The values of the activation energy levels of EC − 0.054 eV for Nitrogen at the hexagonal site and of EC − 0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations ( ND − NV ) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 × 1017 to 7 × 1017 cm−3. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of EC −0.0058 eV was observed in one SSM sample having ND − NV = 7 × 1017 cm−3.

Limited Reaction Processing: Silicon and III–V Materials

1987 ◽  
Vol 92 ◽  
Author(s):  
James F. Gibbons ◽  
S. Reynolds ◽  
C. Gronet ◽  
D. Vook ◽  
C. King ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Group Iv ◽  
Interface Quality ◽  
A New Technique ◽  
Transistor Fabrication ◽  
Reaction Processing

ABSTRACTLimited Reaction Processing (LRP) is a new technique which combines Rapid Thermal Processing (RTP) and Chemical Vapor Deposition (CVD). The added temperature control provided in rapid thermal processing enables the use of substrate temperature as a reaction switch. In addition, rapid thermal technology has been shown to provide other advantages for chemical vapor deposition of Si and III–V materials. Results are presented for group IV materials including epitaxial Si, SiGe alloys, SiO2 , and polysilicon. MOSFETs have been demonstrated and sensitive tests of interface quality are presented, paving the way for future bipolar transistor fabrication. III–V materials such as GaAs, AlGaAs, InGaAs have been grown. GaAs electron mobilities are the best reported for material grown using trimethylarsenic. As-ambient rapid thermal anneals of GaAs have also been performed.

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