A New Technique for Via Plugging through the Selective Chemical Vapor Deposition of Aluminum

1997 ◽  
Vol 36 (Part 1, No. 2) ◽  
pp. 657-660 ◽  
Author(s):  
Byung-Yoon Kim ◽  
Dong-Chan Kim ◽  
Seung-Ki Joo
1993 ◽  
Vol 17 (3) ◽  
pp. 527-535 ◽  
Author(s):  
C. Dossi ◽  
R. Psaro ◽  
A. Bartsch ◽  
E. Brivio ◽  
A. Galasco ◽  
...  

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.


1989 ◽  
Vol 20 (1-2) ◽  
pp. 123-133 ◽  
Author(s):  
N.C. Macdonald ◽  
L.Y. Chen ◽  
J.J. Yao ◽  
Z.L. Zhang ◽  
J.A. McMillan ◽  
...  

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC08 ◽  
Author(s):  
Heejung Park ◽  
Seunghee Go ◽  
Chiyoung Lee ◽  
Hoseok Nam ◽  
Jong-Kwon Lee ◽  
...  

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2057-2060 ◽  
Author(s):  
Takeshi Tanaka ◽  
Koji Deguchi ◽  
Masataka Hirose

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