Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 Films

S. Isomae; Y. Tamaki; A. Yajima; M. Nanba; M. Maki

doi:10.1149/1.2129166

Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 Films

Journal of The Electrochemical Society ◽

10.1149/1.2129166 ◽

1979 ◽

Vol 126 (6) ◽

pp. 1014-1019 ◽

Cited By ~ 44

Author(s):

S. Isomae ◽

Y. Tamaki ◽

A. Yajima ◽

M. Nanba ◽

M. Maki

Keyword(s):

Viscoelastic Behavior ◽

Silicon Substrates ◽

Dislocation Generation ◽

Sio2 Films

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Thermal Stress in CVD PSG and SiO2 Films on Silicon Substrates

Journal of The Electrochemical Society ◽

10.1149/1.2119640 ◽

1983 ◽

Vol 130 (1) ◽

pp. 135-138 ◽

Cited By ~ 20

Author(s):

M. Shimbo ◽

T. Matsuo

Keyword(s):

Thermal Stress ◽

Silicon Substrates ◽

Sio2 Films

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Film‐edge‐induced dislocation generation in silicon substrates. III. High voltage transmission electron microscopy observations and theoretical results for (1̄11) and (011) silicon substrates

Journal of Applied Physics ◽

10.1063/1.340307 ◽

1988 ◽

Vol 63 (12) ◽

pp. 5703-5711 ◽

Cited By ~ 11

Author(s):

J. Vanhellemont ◽

C. Claeys

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Voltage ◽

Silicon Substrates ◽

Dislocation Generation ◽

Transmission Electron ◽

High Voltage Transmission ◽

Induced Dislocation ◽

Theoretical Results

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Evaluation of Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates by Selective Oxidation

Journal of The Electrochemical Society ◽

10.1149/1.2127474 ◽

1981 ◽

Vol 128 (3) ◽

pp. 644-648 ◽

Cited By ~ 15

Author(s):

Y. Tamaki ◽

S. Isomae ◽

S. Mizuo ◽

H. Higuchi

Keyword(s):

Selective Oxidation ◽

Silicon Substrates ◽

Dislocation Generation

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Influence of Oxygen Concentration on Dislocation Generation at Stress Singularity Fields in Silicon Substrates.

Journal of the Society of Materials Science Japan ◽

10.2472/jsms.46.1101 ◽

1997 ◽

Vol 46 (9) ◽

pp. 1101-1106 ◽

Cited By ~ 1

Author(s):

Hiroyuki OHTA ◽

Makoto KITANO

Keyword(s):

Oxygen Concentration ◽

Stress Singularity ◽

Silicon Substrates ◽

Dislocation Generation

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Proposal of Prediction Method for Dislocation Generation in Silicon Substrates for Semiconductor Devices. Dependence of Strength for Dislocation Generation on Device Structure.

Journal of the Society of Materials Science Japan ◽

10.2472/jsms.49.672 ◽

2000 ◽

Vol 49 (6) ◽

pp. 672-677

Author(s):

Hiroyuki OHTA ◽

Makoto KITANO

Keyword(s):

Semiconductor Devices ◽

Prediction Method ◽

Silicon Substrates ◽

Device Structure ◽

Dislocation Generation

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Evaluation of Dislocation Generation in Silicon Substrates by Selective Oxidation of U‐Grooves

Journal of The Electrochemical Society ◽

10.1149/1.2100489 ◽

1987 ◽

Vol 134 (2) ◽

pp. 500-502 ◽

Cited By ~ 4

Author(s):

K. Sagara ◽

Y. Tamaki ◽

M. Kawamura

Keyword(s):

Selective Oxidation ◽

Silicon Substrates ◽

Dislocation Generation

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Film‐edge‐induced dislocation generation in silicon substrates. I. Theoretical model

Journal of Applied Physics ◽

10.1063/1.337977 ◽

1987 ◽

Vol 61 (6) ◽

pp. 2170-2175 ◽

Cited By ~ 61

Author(s):

J. Vanhellemont ◽

S. Amelinckx ◽

C. Claeys

Keyword(s):

Theoretical Model ◽

Silicon Substrates ◽

Dislocation Generation ◽

Induced Dislocation

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Film‐edge‐induced dislocation generation in silicon substrates. II. Application of the theoretical model for local oxidation processes on (001) silicon substrates

Journal of Applied Physics ◽

10.1063/1.337978 ◽

1987 ◽

Vol 61 (6) ◽

pp. 2176-2188 ◽

Cited By ~ 37

Author(s):

J. Vanhellemont ◽

S. Amelinckx ◽

C. Claeys

Keyword(s):

Theoretical Model ◽

Silicon Substrates ◽

Dislocation Generation ◽

Oxidation Processes ◽

Local Oxidation ◽

Induced Dislocation

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METHOD FOR PREDICTION OF DISLOCATION GENERATION IN SILICON SUBSTRATES OF SEMICONDUCTOR DEVICES

Journal of the Society of Materials Science Japan ◽

10.2472/jsms.47.12appendix_261 ◽

1998 ◽

Vol 47 (12Appendix) ◽

pp. 261-266

Author(s):

Hiroyuki OHTA ◽

Hideo MIURA ◽

Makoto KITANO

Keyword(s):

Semiconductor Devices ◽

Silicon Substrates ◽

Dislocation Generation

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Evaluation of Dislocation Generation on Silicon Substrates by Selective Oxidation

Journal of The Electrochemical Society ◽

10.1149/1.2119566 ◽

1983 ◽

Vol 130 (11) ◽

pp. 2266-2270 ◽

Cited By ~ 7

Author(s):

Y. Tamaki ◽

S. Isomae ◽

S. Mizuo ◽

H. Higuchi

Keyword(s):

Selective Oxidation ◽

Silicon Substrates ◽

Dislocation Generation

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