scholarly journals Influence of Oxygen Concentration on Dislocation Generation at Stress Singularity Fields in Silicon Substrates.

1997 ◽  
Vol 46 (9) ◽  
pp. 1101-1106 ◽  
Author(s):  
Hiroyuki OHTA ◽  
Makoto KITANO
Keyword(s):  
Oxygen Concentration ◽  
Stress Singularity ◽  
Silicon Substrates ◽  
Dislocation Generation

Low-Temperature Diffusivity of Hydrogen in Different Silicon Substrates

1995 ◽  
Vol 378 ◽  
Author(s):  
Xiaojun Deng ◽  
Bhushan L. Sopori
Keyword(s):  
Low Temperature ◽  
Carbon Content ◽  
Oxygen Concentration ◽  
Hydrogen Diffusion ◽  
Growth Conditions ◽  
Growth Speed ◽  
Silicon Substrates ◽  
Vacancy Mechanism ◽  
Speed Increase

AbstractThe diffusivity of deuterium (D) at 250°C was determined in silicon samples grown by different techniques. It is found that the diffusivity increases with the growth speed, increase in carbon content and a decrease in oxygen concentration of the substrate. These growth conditions correlate well with the concentration of vacancy-type defects in the as-grown state. Hence, we conclude that a vacancy mechanism is responsible for low-temperature hydrogen diffusion in silicon. The highest diffusivity for hydrogen, calculated from these data, was found to be 3 × 10−7 cm2/s.

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