Film‐edge‐induced dislocation generation in silicon substrates. II. Application of the theoretical model for local oxidation processes on (001) silicon substrates

1987 ◽  
Vol 61 (6) ◽  
pp. 2176-2188 ◽  
Author(s):  
J. Vanhellemont ◽  
S. Amelinckx ◽  
C. Claeys
Keyword(s):  
Theoretical Model ◽  
Silicon Substrates ◽  
Dislocation Generation ◽  
Oxidation Processes ◽  
Local Oxidation ◽  
Induced Dislocation

Impact of Silicon Wafer Material on Dislocation Generation in Local Oxidation

1998 ◽  
Vol 532 ◽  
Author(s):  
I. V. Peidous ◽  
R. Sundaresan ◽  
E. Quek ◽  
Y. K. Leung ◽  
M. Beh
Keyword(s):  
Surface Defect ◽  
Depth Distribution ◽  
Defect Density ◽  
Dislocation Generation ◽  
Local Oxidation ◽  
Dislocation Movement ◽  
Defect Nucleation ◽  
Critical Resolved Shear Stress ◽  
Induced Dislocation

ABSTRACTCrystalline quality of locally oxidized silicon wafers has been studied. Wafers from different supply sources were found to be differently susceptible to stress-induced dislocation generation, although they had been produced to the same specification. On the basis of the analysis of a depth distribution of the dislocations, critical resolved shear stress of dislocation movement in the bulk areas of the wafers was determined. It varied from about 1.65 to 5.12 MPa and correlated positively to the surface defect density. The results show that uncontrollable variations of bulk silicon properties may significantly influence the stress-induced defect nucleation on the surface of wafers during processing.

Local oxidation induced dislocation generation near [100] Si3N4film edges

1983 ◽  
Vol 43 (12) ◽  
pp. 1120-1122 ◽  
Author(s):  
J. Vanhellemont ◽  
J. Van Landuyt ◽  
S. Amelinckx ◽  
C. Claeys ◽  
G. Declerck ◽  
...  
Keyword(s):  
Dislocation Generation ◽  
Local Oxidation ◽  
Induced Dislocation

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

1999 ◽  
Vol 146 (9) ◽  
pp. 3461-3465 ◽  
Author(s):  
T. Ono ◽  
A. Romanowski ◽  
E. Asayama ◽  
H. Horie ◽  
K. Sueoka ◽  
...  
Keyword(s):  
Dislocation Generation ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Induced Dislocation ◽  
Oxide Precipitate

scholarly journals On the Stress Dependence of Subgrain Size

1982 ◽  
Vol 5 (3) ◽  
pp. 127-152 ◽  
Author(s):  
G. H. Edward ◽  
M. A. Etheridge ◽  
B. E. Hobbs
Keyword(s):  
Material Properties ◽  
Subgrain Size ◽  
Dynamic Balance ◽  
Dislocation Generation ◽  
Proportionality Constant ◽  
Creep Stress ◽  
Dislocation Annihilation ◽  
Size Relation ◽  
Induced Dislocation ◽  
Environmental Dependence

A simple model of the dynamic balance between deformation induced dislocation generation and climb controlled dislocation annihilation in subgrain walls is outlined. This results in a stress-subgrain size relationship which involves various material properties, including the creep stress exponent and the creep diffusivity.Assuming a fixed slip distance for mobile dislocations, the theory predicts that the subgrain size (d) depends on the stress (σ) as d4∝σ−n, where n is the creep exponent, and the proportionality constant is dependent on material properties, temperature, and other environmental variables. This theoretical prediction is satisfactorily compared with published experimental results for a variety of materials.The implications of the environmental dependence of the stress-subgrain size relation with regard to its use as a palaeopiezometer in naturally deformed minerals are discussed.

Microstructure and Defects in Implanted Hipox-Structures

1992 ◽  
Vol 280 ◽  
Author(s):  
N. David Theodore ◽  
Peter L. Pegler
Keyword(s):  
High Pressure ◽  
Semiconductor Devices ◽  
Structural Defects ◽  
Silicon Substrates ◽  
Pressure Oxidation ◽  
Electrical Isolation ◽  
And Behavior ◽  
Dislocation Sources ◽  
Induced Dislocation ◽  
High Pressure Oxidation

ABSTRACTHigh-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. The effect of HIPOX-related stresses on isolation structures is of interest because structural-defects, if formed, could electrically degrade devices. The present investigation was performed to study the origin and behavior of defects in recessed HIPOX structures. The structures were exposed to a boron implant. The experimental observations indicate that glide dislocations arise when the following features are present: (i) HIPOX, (ii) recessed edge, (iii) boron implant. The origin and behavior of the defects are modelled and explained in terms of implant-induced dislocation-sources creating glide-dislocations in the structures. The microstructure of the structures described above, and defect-modelling is presented.

Edge Effects of Nitride Film Patterning on Dislocation Generation in Local Oxidation of Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
I. V. Peidous ◽  
R. Sundaresan ◽  
E. Quek ◽  
C. K. Lau
Keyword(s):  
Strong Dependence ◽  
Surface Damage ◽  
Wafer Surface ◽  
Nitride Film ◽  
Strongly Correlated ◽  
Leakage Currents ◽  
Dislocation Generation ◽  
Silicon Nitride Films ◽  
Local Oxidation ◽  
Defect Nucleation

AbstractExtensive monitoring of device characteristics in the manufacturing of ULSI with advanced LOCOS isolation revealed the strong dependence of device leakage currents on the process of patterning of silicon nitride films applied as a hard mask for local oxidation of silicon wafers. At the same time, the level of the leakage currents strongly correlated to stress-induced dislocation density in the device structures. Formation of microtrenches on the wafer surface at the nitride film edges was identified to have a major impact on the leakage currents. Surprisingly, structures having nitride film edge profiles with feet were consistently dislocation-free after the local oxidation. This showed that nitride etching process created surface damage that provided effective sites for crystal defect nucleation in silicon at the film edges. Computer simulations demonstrated that the feet at nitride edges substantially suppress stress growth during local oxidation.

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