scholarly journals Proposal of Prediction Method for Dislocation Generation in Silicon Substrates for Semiconductor Devices. Dependence of Strength for Dislocation Generation on Device Structure.

2000 ◽  
Vol 49 (6) ◽  
pp. 672-677
Author(s):  
Hiroyuki OHTA ◽  
Makoto KITANO
Keyword(s):  
Semiconductor Devices ◽  
Prediction Method ◽  
Silicon Substrates ◽  
Device Structure ◽  
Dislocation Generation

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Microstructure and Defects in Implanted Hipox-Structures

1992 ◽  
Vol 280 ◽  
Author(s):  
N. David Theodore ◽  
Peter L. Pegler
Keyword(s):  
High Pressure ◽  
Semiconductor Devices ◽  
Structural Defects ◽  
Silicon Substrates ◽  
Pressure Oxidation ◽  
Electrical Isolation ◽  
And Behavior ◽  
Dislocation Sources ◽  
Induced Dislocation ◽  
High Pressure Oxidation

ABSTRACTHigh-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. The effect of HIPOX-related stresses on isolation structures is of interest because structural-defects, if formed, could electrically degrade devices. The present investigation was performed to study the origin and behavior of defects in recessed HIPOX structures. The structures were exposed to a boron implant. The experimental observations indicate that glide dislocations arise when the following features are present: (i) HIPOX, (ii) recessed edge, (iii) boron implant. The origin and behavior of the defects are modelled and explained in terms of implant-induced dislocation-sources creating glide-dislocations in the structures. The microstructure of the structures described above, and defect-modelling is presented.

Some Fundamental Aspects of the Thin Film Organization and Device – Structure Fabrication of Polydiacetylenes

1987 ◽  
Vol 109 ◽  
Author(s):  
M. Thakur ◽  
B. Verbeek ◽  
G. C. Chi ◽  
K. J. O'BRIEN
Keyword(s):  
Single Crystal ◽  
Logic Gates ◽  
Optical Quality ◽  
Molecular Organization ◽  
Silicon Substrates ◽  
Device Structure ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Device Applications ◽  
First Time

ABSTRACTThe utility of the Shear method in obtaining thin single crystal films of polydiacetylenes has been demonstrated previously. In this paper the principles of the Shear method are elucidated with analogy to the well-known L-B method. Both the methods, L-B and Shear, utilize the polar molecular interactions with the substrates as a control parameter for the molecular organization. The major difference between the two is that one (L-B) utilizes a liquid as the subphase while the other (Shear) uses solid substrates. Because of the nature of the interface the L-B approach leads to only one-dimensional organization and poor optical quality for the films while the Shear method provides 3-D organization and excellent optical quality.Thin single crystal films of a specific polydiacetylene, PTS, are prepared on oxide coated silicon substrates by the Shear method. Waveguiding through the PTS films is demonstrated for the first time. Much progress is also made in the waveguide-structural fabrication of PTS films. The results are quite encouraging in terms of device applications of polydiacetylenes as optical switches and logic gates.

c-Axis-tilted ScAlN films grown on silicon substrates for surface acoustic wave devices

2022 ◽  
Author(s):  
Takumi Tominaga ◽  
Shinji Takayanagi ◽  
Takahiko Yanagitani
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Mobile Networks ◽  
Tilt Angle ◽  
Silicon Substrate ◽  
Electromechanical Coupling ◽  
Rf Magnetron Sputtering ◽  
Electromechanical Coupling Coefficient ◽  
Silicon Substrates ◽  
Device Structure

Abstract ScAlN films are currently being investigated for their potential use in surface acoustic wave (SAW) devices for next-generation mobile networks because of their high piezoelectricity. This paper describes the numerical simulation of SAW propagation in c-axis-tilted ScAlN films on silicon substrates and a fabrication technique for preparing c-axis-tilted ScAlN films on silicon substrates. The electromechanical coupling coefficient K 2 of SAW propagating in the ScAlN film/silicon substrate increased due to the c-axis tilt angle. The maximum K 2 value is approximately 3.90%. This value is 2.6 times the maximum K 2 value of the c-axis-oriented ScAlN film/silicon substrate structure. The c-axis-tilted ScAlN films with an Sc concentration of 40% were prepared on a silicon substrate via RF magnetron sputtering based on the self-shadowing effect, and the maximum c-axis tilt angle was 57.4°. These results indicate that this device structure has potential for SAW device applications with well-established micromachining technology derived from silicon substrates.

Durability and Reliability of Semiconductor Devices

1998 ◽  
Vol 531 ◽  
Author(s):  
V. G. Sidorov ◽  
V. I. Sokolov ◽  
D. V. Sidorov
Keyword(s):  
Composite Materials ◽  
Defect Structure ◽  
Driving Force ◽  
Semiconductor Device ◽  
Semiconductor Devices ◽  
Life Time ◽  
Structure Evolution ◽  
Relaxation Processes ◽  
Device Structure ◽  
General Aspects

AbstractThe aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved. The driving force for the evolution of defect device structure is associated with relaxation processes of internal mechanical stresses. In this report the degradational effects in LEDs based on GaAs(Si) have been analyzed. The discussion of the necessity for research on composite materials creation is also included.

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