Evaluation of Dislocation Generation in Silicon Substrates by Selective Oxidation of U‐Grooves

1987 ◽  
Vol 134 (2) ◽  
pp. 500-502 ◽  
Author(s):  
K. Sagara ◽  
Y. Tamaki ◽  
M. Kawamura
Keyword(s):  
Selective Oxidation ◽  
Silicon Substrates ◽  
Dislocation Generation

Evaluation of Dislocation Generation on Silicon Substrates by Selective Oxidation

1983 ◽  
Vol 130 (11) ◽  
pp. 2266-2270 ◽  
Author(s):  
Y. Tamaki ◽  
S. Isomae ◽  
S. Mizuo ◽  
H. Higuchi
Keyword(s):  
Selective Oxidation ◽  
Silicon Substrates ◽  
Dislocation Generation

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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